FGS15N40LTF_NL [FAIRCHILD]
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, LEAD FREE, SOP-8;型号: | FGS15N40LTF_NL |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, LEAD FREE, SOP-8 通用开关 栅 光电二极管 晶体管 |
文件: | 总8页 (文件大小:237K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
September 2001
IGBT
FGS15N40L
General Description
Features
Insulated Gate Bipolar Transistors(IGBTs) with trench
gate structure have superior performance in conductance
and switching to planar gate structure and also have wide
noise immunity. These devices are well suitable for
strobe application
•
•
•
High Input Impedance
High Peak Current Capability (130A)
Easy Gate Drive
Application
•
Strobe Flash
C
C
C
C
G
C
E
G
E
E
8-SOP
E
Absolute Maximum Ratings
T = 25°C unless otherrwise noted
C
Symbol
Description
FGS15N40L
400
Units
V
V
V
Collector-Emitter Voltage
CES
GES
Gate-Emitter Voltage
± 6
V
I
Pulsed Collector Current
130
A
CM (1)
P
M a x i m u m P o w e r D i s s i p a t i o n
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
PurPoses from case for 5 secnds
@ T = 25°C
2.0
W
C
a
T
-40 to +150
-40 to +150
°C
°C
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
62.5
Units
R
Thermal Resistance, Junction-to-Ambient(PCB Mount)
°C/W
θJA
Notes: Mounted on 1” square PCB(FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
V
V
V
= 0V, I = 1mA
450
--
--
--
--
--
V
CES
CES
GES
GE
CE
GE
C
I
I
Collector Cut-off Current
= V
= V
, V = 0V
10
µA
µA
CES
GES
GE
G-E leakage Current
, V = 0V
--
± 0.1
CE
On Characteristics
V
G-E threshold Voltage
I
I
= 0V, I = 1mA
-
-
1.4
8.0
V
V
GE(th)
C
C
V
C-E Saturation Voltage
= 130A , V
= 4.0V
GE
2.0
4.5
CE(sat)
C
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
3800
45
--
--
--
pF
pF
pF
ies
V
= 0V , V = 30V
CE
GE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
30
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
0.15
1.5
--
--
us
us
us
us
d(on)
V
V
= 300V , I = 130A
CC
C
Rise Time
r
= 4.0V , R = 15Ω *
GE
G
Turn-Off Delay Time
Fall Time
0.15
1.5
0.3
3.0
d(off)
f
Resistive Load
Notes : Recommendation of Rg Value : Rg ≥ 15Ω
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
7
6
5
4
3
2
Common Emitter
VGE=4.0V
6V
5V
Commom Emitter
180
150
120
90
℃
C = 25
T
4V
Ic=130A
VGE = 3V
Ic=100A
Ic=70A
60
30
0
0
2
4
6
8
-50
0
50
Case Temperature,TC [
100
]
150
Collector-Emitter Voltage, VCE [V]
℃
Fig 1. Typical Output Chacracteristics
Fig 2. Saturation Voltage vs. Case Temerature
at Variant Current Level
10
10
Common Emitter
Common Emitter
℃
TC=-40
℃
TC=25
8
6
4
2
0
8
6
4
2
0
130A
130A
100A
100A
IC=70A
IC=70A
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Gate-Emitter Voltage ,VGE [V]
Gate-Emitter Voltage ,VGE [V]
Fig 3. Saturation Voltage vs. V
Fig 4. Saturation Voltage vs. V
GE
GE
10000
10
Common Emitter
℃
Cies
TC=150
8
6
4
2
0
1000
100
10
Common Emitter
VGE=0V f=1MHz TC=25
℃
130A
100A
Coes
Cres
IC=70A
0
10
20
30
40
0
1
2
3
4
5
6
Collector-Emitter Voltage,VCE [V]
Gate-Emitter Voltage ,VGE [V]
Fig 6. Capacitance Characteristics
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
200
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
Fig 7. Collector Current Limit Vs
Gate - Emitter Voltage Limit
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
Package Dimension
8-SOP
0.1~0.25
0.004~0.001
MIN
1.55 ±0.20
0.061 ±0.008
#8
#5
#1
#4
6.00 ±0.30
0.236 ±0.012
1.80
0.071
MAX
3.95 ±0.20
0.156 ±0.008
5.72
0.225
0.50 ±0.20
0.020 ±0.008
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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Bottomless™
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FASTr™
FRFET™
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OPTOPLANAR™
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SMART START™
STAR*POWER™
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CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
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GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
FACT™
FACT Quiet Series™
UHC™
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STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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Insulated Gate Bipolar Transistors(IGBTs)
with trench gate structure have superior
performance in conductance and switching to
planar gate structure and also have wide noise
immunity. These devices are well suitable for
strobe application.
Quality and reliability
This pagePrint version
Design tools
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Features
technical information
buy products
technical support
my Fairchild
●
●
●
High Input Impedance
High Peak Current Capability (130A)
Easy Gate Drive
company
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Applications
●
Strobe Flash
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Product status/pricing/packaging
Product
FGS15N40LTF
FGS15N40LTU
Product status
Pricing*
Package type
SOIC
Leads
Packing method
TAPE REEL
RAIL
Full Production
Full Production
$1.36
$1.36
8
8
SOIC
* 1,000 piece Budgetary Pricing
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