FGS15N40L [FAIRCHILD]

Electrical Characteristics of IGBT; IGBT的电气特性


型号：	FGS15N40L
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Electrical Characteristics of IGBT IGBT的电气特性双极性晶体管
文件：	总6页 (文件大小：207K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

September 2001

IGBT

FGS15N40L

General Description

Features

Insulated Gate Bipolar Transistors(IGBTs) with trench

gate structure have superior performance in conductance

and switching to planar gate structure and also have wide

noise immunity. These devices are well suitable for

strobe application

•

High Input Impedance

High Peak Current Capability (130A)

Easy Gate Drive

Application

•

Strobe Flash

8-SOP

Absolute Maximum Ratings

T = 25°C unless otherrwise noted

Symbol

Description

FGS15N40L

400

Units

Collector-Emitter Voltage

CES

GES

Gate-Emitter Voltage

± 6

Pulsed Collector Current

130

CM (1)

M a x i m u m P o w e r D i s s i p a t i o n

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

PurPoses from case for 5 secnds

@ T = 25°C

2.0

-40 to +150

°C

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

62.5

Units

Thermal Resistance, Junction-to-Ambient(PCB Mount)

°C/W

θJA

Notes: Mounted on 1” square PCB(FR4 or G-10 Material)

FGS15N40L Rev. A1

Electrical Characteristics of IGBT

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage

= 0V, I = 1mA

450

CES

GES

Collector Cut-off Current

= V

, V = 0V

µA

CES

GES

G-E leakage Current

, V = 0V

± 0.1

On Characteristics

G-E threshold Voltage

= 0V, I = 1mA

1.4

8.0

GE(th)

C-E Saturation Voltage

= 130A , V

= 4.0V

2.0

4.5

CE(sat)

Dynamic Characteristics

Input Capacitance

3800

ies

= 0V , V = 30V

Output Capacitance

oes

res

f = 1MHz

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

0.15

1.5

d(on)

= 300V , I = 130A

Rise Time

= 4.0V , R = 15Ω *

Turn-Off Delay Time

Fall Time

0.15

1.5

0.3

3.0

d(off)

Resistive Load

Notes : Recommendation of Rg Value : Rg ≥ 15Ω

FGS15N40L Rev. A1

Common Emitter

V_GE=4.0V

Commom Emitter

180

150

120

℃

_C= 25

Ic=130A

V_GE= 3V

Ic=100A

Ic=70A

-50

Case Temperature,T_C[

100

]

150

Collector-Emitter Voltage, V_CE[V]

℃

Fig 1. Typical Output Chacracteristics

Fig 2. Saturation Voltage vs. Case Temerature

at Variant Current Level

Common Emitter

℃

T_C=-40

℃

T_C=25

130A

100A

I_C=70A

Gate-Emitter Voltage ,V_GE[V]

Fig 3. Saturation Voltage vs. V

Fig 4. Saturation Voltage vs. V

10000

Common Emitter

℃

Cies

T_C=150

1000

100

Common Emitter

V_GE=0V f=1MHz T_C=25

℃

130A

100A

Coes

Cres

I_C=70A

Collector-Emitter Voltage,V_CE[V]

Gate-Emitter Voltage ,V_GE[V]

Fig 6. Capacitance Characteristics

Fig 5. Saturation Voltage vs. V

FGS15N40L Rev. A1

200

180

160

140

120

100

Gate-Emitter Voltage,V_GE[V]

Fig 7. Collector Current Limit Vs

Gate - Emitter Voltage Limit

FGS15N40L Rev. A1

Package Dimension

8-SOP

0.1~0.25

0.004~0.001

MIN

1.55 ±0.20

0.061 ±0.008

6.00 ±0.30

0.236 ±0.012

1.80

0.071

MAX

3.95 ±0.20

0.156 ±0.008

5.72

0.225

0.50 ±0.20

0.020 ±0.008

Dimensions in Millimeters

FGS15N40L Rev. A1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

Bottomless™

CoolFET™

FAST^®

FASTr™

FRFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

SMART START™

STAR*POWER™

Stealth™

VCX™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

POP™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

Power247™

PowerTrench^®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

FACT™

FACT Quiet Series™

UHC™

UltraFET^®

STAR*POWER is used under license

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

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which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

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