FJC1386Q [FAIRCHILD]
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SOT-89 ; 晶体管| BJT | PNP | 20V V( BR ) CEO | 5A I(C ) | SOT- 89\n型号: | FJC1386Q |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SOT-89
|
文件: | 总4页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJC1386
Low Saturation Transistor
Medium Power Amplifier
•
•
•
Complement to FJC2098
High Collector Current
Low Collector-Emitter Saturation Voltage
SOT-89
1. Base 2. Collector 3. Emitter
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
-30
Units
V
V
V
V
Collector-Base Voltage
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
-20
V
CEO
EBO
-6
V
I
-5
A
C
P
Power Dissipation(T =25°C)
0.5
W
C
C
T
T
Junction Temperature
Storage Temperature
150
°C
°C
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
-30
-20
-6
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =-50µA, I =0
CBO
CEO
EBO
C
E
BV
BV
I =-1mA, I =0
V
C
B
I =-50µA, I =0
V
E
C
I
I
V
=-20V, V =0
-0.5
-0.5
390
-1.0
-1.5
µA
µA
CBO
EBO
CB
EB
CE
B
Emitter Cut-off Current
V
V
=-5V, I =0
C
h
DC Current Gain
=-2V, I =-0.5A
80
FE
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I =-4, I =-0.1A
V
V
CE
C
B
I =-4, I =-0.1A
BE
C
B
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Max
Units
°C/W
R
Thermal Resistance, Junction to Ambient
250
θjA
h
Classification
FE
Classification
P
Q
R
h
80 ~ 180
120 ~ 270
180 ~ 390
FE
Marking
FAP
h
grade
FE
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
Typical Characteristics
-1400
-1200
-1000
-800
-600
-400
-200
0
1000
100
10
IB = -7mA
VCE = - 2V
Ta = 125oC
Ta = 25oC
IB = -6mA
IB = -5mA
Ta = - 40oC
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
-10m
-100m
-1
-10
0
-2
-4
-6
-8
-10
-12
-14
-16
IC [A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-10
IC = 10 IB
IC = 10 IB
-1
-100m
-10m
-1m
Ta = 125oC
-1
Ta = - 40oC
Ta = 25oC
Ta = - 40oC
Ta = 25oC
Ta = 125oC
-0.1
-1m
-10m
-100m
-1
-10
-1m
-10m
-100m
-1
-10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-1.8
VCE = - 2V
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
125oC
25oC
- 40oC
-0.2
-0.0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
0
25
50
75
100
125
150
175
VBE [V], BASE-EMITTER VOLTAGE
Ta [oC], AMIBIENT TEMPERATURE
Figure 5. Base-Emitter On Voltage
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
Package Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
1.65 ±0.10
(0.40)
C0.2
0.50 ±0.10
0.40 ±0.10
+0.10
–0.05
0.40
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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