FJL6820TU [FAIRCHILD]
Power Bipolar Transistor, 20A I(C), 750V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN;
| 型号： | FJL6820TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 20A I(C), 750V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN 晶体 晶体管 功率双极晶体管 放大器 局域网 |
| 文件： | 总5页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJL6820
High Voltage Color Display Horizontal
Deflection Output
•
•
•
High Collector-Base Breakdown Voltage : BV
= 1500V
CBO
Low Saturation Voltage : V (sat) = 3V (Max.)
For Color Monitor
CE
1
TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Rating
1500
750
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
V
V
CBO
CEO
EBO
6
V
I
I
20
A
C
*
30
A
CP
P
200
W
°C
°C
C
J
T
T
150
-55 ~ 150
STG
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
1
Units
mA
µA
mA
V
I
I
I
Collector Cut-off Current
V
V
V
=1400V, R =0
CES
CB
CB
EB
BE
Collector Cut-off Current
=800V, I =0
10
1
CBO
EBO
E
Emitter Cut-off Current
=4V, I =0
C
BV
BV
BV
Collector-Base Breakdown Voltage
Collector-EmitterBreakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
I =500µA, I =0
1500
750
6
CBO
CEO
EBO
C
E
I =5mA, I =0
V
C
B
I =500µA, I =0
V
E
C
h
h
h
V
V
V
=5V, I =1A
8
6
5.5
FE1
CE
CE
CE
C
=5V, I =8.5A
10
8.5
FE2
FE3
C
=5V, I =11A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
I =11A, I =2.75A
3
V
V
CE
C
B
I =11A, I =2.75A
1.5
3
BE
C
B
t
*
V
=200V, I =10A, R =20Ω
µs
µs
STG
CC
C
L
I
=2.0A, I = - 4.0A
B2
t *
Fall Time
B1
0.15
0.2
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Typ
Max
0.625
Units
°C/W
R
Thermal Resistance, Junction to Case
θjC
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
Typical Characteristics
14
12
10
8
100
10
1
IB=2.0A
IB=1.8A
VCE = 5V
IB=1.6A
IB=1.4A
IB=1.2A
Ta = 1250C
Ta = 250C
IB=1.0A
IB=0.8A
IB=0.6A
Ta = - 250C
6
IB=0.4A
IB=0.2A
4
2
0
0
2
4
6
8
10
12
0.1
1
10
100
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
10
IC = 5 IB
IC = 3 IB
Ta = 1250C
1
1
Ta = 250C
Ta = - 250C
Ta = 250C
Ta = 1250C
Ta = - 250C
0.1
0.1
0.01
0.1
0.01
0.1
1
10
100
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
16
IB1 = 2A, VCC = 200V
IC = 10A
tSTG
VCE = 5V
14
12
10
8
1
tF
6
1250C
0.1
4
2
- 250C
250C
0.6
0.01
0.1
0
0.0
1
10
100
0.2
0.4
0.8
1.0
1.2
IB2 [A], REVERSE BASE CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
Typical Characteristics (Continued)
10
10
IB1 = 2A, IB2 = - 4A
VCC = 200V
IB2 = - 4A, VCC = 200V
IC = 10A
tSTG
tSTG
1
1
tF
tF
0.1
0.1
1
10
1
10
100
IB1 [A], FORWARD BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
40
100
RB2 = 0, IB1 = 15A
IC (Pulse)
IC (DC)
t = 100ms t = 10ms
35
VCC = 30V, L = 200µH
t = 1ms
10
30
25
20
15
1
VBE(off) = - 6V
0.1
0.01
10
TC = 25oC
5
Single Pulse
VBE(off) = - 3V
1
1
10
100
1000
10000
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
Figure 10. Reverse Bias Safe Operating Area
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
Package Demensions
TO-264
20.00 ±0.20
(2.00)
(8.30)
(8.30)
(1.00)
(R2.00)
(0.50)
ø3.30
±
0.20
(R1.00)
(7.00)
(7.00)
4.90 ±0.20
(1.50)
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
+0.25
–0.10
1.00
+0.25
–0.10
0.60
2.80 ±0.30
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
SuperSOT™-3
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
POP™
PowerTrench®
QFET™
HiSeC™
QS™
UltraFET®
VCX™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
© 2001 Fairchild Semiconductor Corporation
Rev. H2
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