FJN598JDD27Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92;
FJN598JDD27Z
型号: FJN598JDD27Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92

文件: 总7页 (文件大小:117K)
中文:  中文翻译
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FJN598J  
Capacitor Microphone Applications  
Especially Suited for use in Audio, Telephone Capacitor Microphones  
Excellent Voltage Characteristic  
Excellent Transient Characteristic  
TO-92  
1. Source 2. Gate 3. Drain  
1
Si N-channel Junction FET  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-20  
Units  
V
Gate-Drain Voltage  
Gate Current  
V
GDO  
I
I
10  
mA  
mA  
mW  
°C  
G
Drain Current  
1
D
P
Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
D
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I = -100uA  
-20  
V
GDO  
G
V
(off)  
V
=5V, I =1µA  
-0.6  
-1.5  
800  
V
GS  
DS  
DS  
DS  
DS  
DS  
D
I
V
V
V
V
=5V, V =0  
100  
0.4  
µA  
ms  
pF  
pF  
DSS  
GS  
lY  
l
Forward Transfer Admittance  
Input Capacitance  
=5V, V =0, f=1MHz  
1.2  
3.5  
FS  
GS  
C
C
=5V, V =0, f=1MHz  
GS  
ISS  
Output Capacitance  
=5V, V =0, f=1MHz  
0.65  
RSS  
GS  
I
Classification  
DSS  
Classification  
A
B
C
D
E
I
(µA)  
100 ~ 170  
150 ~ 240  
210 ~ 350  
320 ~ 480  
440 ~ 800  
DSS  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  
Specified Test Circuit T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
=10mV, f=1KHz  
=10mV, f=1KHz  
Min.  
Typ.  
-3  
Max.  
Units  
dB  
G
Voltage Gain  
V
V
IN  
G V  
Reduced Voltage Characteristic  
V
V
-1.2  
-3.5  
-1  
dB  
V
IN  
=4.5V 1.5V  
CC  
G F  
Frequency Characteristic  
Input Resistance  
f=1KHz to 110Hz  
f=1KHz  
dB  
MΩ  
V
Z
Z
25  
IN  
O
Output Resistance  
f=1KHz  
700  
THD  
Total Harmonic Distortion  
Output Noise Voltage  
V
V
=30mV, f=1KHz  
=0, A CURVE  
1
%
IN  
IN  
V
-110  
dB  
NO  
ꢁꢂꢋ  
ꢁꢒꢓꢃꢅ  
ꢁꢂꢓꢃꢅ  
ꢀꢀ  
ꢀꢀ  
ꢀꢁꢁꢂꢃꢄ  
ꢐꢐꢑ  
ꢆꢌꢍ  
ꢈꢉꢀ  
ꢅꢆꢅꢇ  
ꢂꢋ  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  
Typical Characteristics  
ID-VDS  
ID-VDS  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
500  
IDSS = 200µA  
IDSS = 500µA  
450  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 0  
VGS = -0.1V  
VGS = 0  
VGS = -0.2V  
VGS = -0.3V  
VGS = -0.4V  
VGS = -0.1V  
VGS = -0.2V  
VGS = -0.3V  
VGS = -0.6V  
VGS = -0.4V  
VGS = -0.5V  
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS[V], DRAIN-SOURCE VOLTAGE  
VDS[V], DRAIN-SOURCE VOLTAGE  
lyFSl - IDSS  
ID-VGS  
1.6  
10  
VDS = 5V  
VDS = 5V  
VGS = 0  
f=1kHz  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1
0.1  
-1.6  
-1.4  
-1.2  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0.0  
0.1  
1
VGS[V], GATE-SOURCE VOLTAGE  
IDSS[mA], DRAIN CURRENT  
VGS(off) - IDSS  
CISS - VDS  
100  
10  
-
VDS = 5V  
ID = 1µA  
10  
1
-
1
0.1  
-
1
10  
0.1  
1
IDSS[mA], DRAIN CURRENT  
VDS[V], DRAIN-SOURCE VOLTAGE  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  
Typical Characteristics (continued)  
PD - Ta  
CRSS - VDS  
200  
175  
150  
125  
100  
75  
10  
VGS = 0  
f = 1MHz  
1
50  
25  
0
0.1  
0
25  
50  
75  
100  
125  
150  
1
10  
Ta[oC], AMBIENT TEMPERATURE  
VDS[V], DRAIN-SOURCE VOLTAGE  
VNO - IDSS  
ZO - IDSS  
-110  
-112  
-114  
-116  
-118  
-120  
700  
600  
500  
400  
300  
200  
ZO:VCC =4.5V  
VIN = 10mV  
f = 1kHz  
VNO:VCC =4.5V  
VI = 0, A CURVE  
RL = 1KΩ  
IDSS:VDS=5V  
IDSS:VDS=5V  
10  
100  
1000  
10  
100  
1000  
IDSS[µA], DRAIN CURRENT  
IDSS[µA], DRAIN CURRENT  
THD - IDSS  
ZI - IDSS  
36  
34  
32  
30  
28  
26  
100  
10  
1
ZI:VCC =4.5V  
VIN = 10mV  
f = 1kHz  
THD:VCC = 4.5V  
VIN = 30mV  
f = 1kHz  
IDSS:VDS=5V  
IDSS:VDS = 5V  
10  
100  
1000  
100  
1000  
IDSS[µA], DRAIN CURRENT  
µ
IDSS[ A], DRAIN CURRENT  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  
Typical Characteristics (continued)  
GVV - IDSS  
GVV - IDSS  
4
10  
8
GV:VCC = 4.5V  
VIN = 10mV  
RL = 1kΩ  
GVV:VCC = 4.5V 1.5V  
VIN = 10mV  
f = 1kHz  
IDSS:VDS=5V  
2
6
IDSS:VDS = 5V  
4
0
-2  
-4  
-6  
2
0
-2  
-4  
-6  
-8  
-10  
10  
100  
1000  
10  
100  
1000  
IDSS[µA], DRAIN CURRENT  
IDSS[µA], DRAIN CURRENT  
THD - VIN  
100  
10  
1
THD:VCC = 4.5V  
VIN = 30mV  
f = 1kHz  
IDSS:VDS = 5V  
IDSS = 100µA  
IDSS = 200µA  
IDSS = 400µA  
0.1  
0
40  
80  
120  
160  
200  
240  
VIN[mV], INPUT VOLTAGE  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  
Package Dimensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
QFET™  
QS™  
QT Optoelectronics™  
VCX™  
FASTr™  
ACEx™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
E2CMOSTM  
EnSignaTM  
FACT™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
POP™  
FACT Quiet Series™  
FAST®  
PowerTrench®  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Obsolete  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. F1  

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