FJP3307DH1 [FAIRCHILD]
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN;
| 型号： | FJP3307DH1 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJP3307D
High Voltage Fast Switching NPN Power Transistor
Features
•
•
Built-in Diode between Collector and Emitter
Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
B
TO-220
1
1.Base 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
VCBO
Parameter
Value
700
400
9
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
V
V
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
8
A
ICP
16
A
IB
4
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
80
W
°C
°C
TJ
150
TSTG
-55 ~ 150
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
BVCBO
BVCEO
BVEBO
IEBO
Parameter
Conditions
IC = 500µA, IE = 0
Min.
Typ.
Max Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
700
400
9
V
V
V
IC = 5mA, IB = 0
IE = 500µA, IC = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
1
mA
hFE1
hFE2
DC Current Gain
8
5
40
30
V
CE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1
2
V
V
V
V
V
3
VBE(sat)
1.2
1.6
©2004 Fairchild Semiconductor Corporation
FJP3307D Rev. 1.0.0
1
www.fairchildsemi.com
Electrical Characteristics TC = 25°C unless otherwise noted (Continued)
Symbol
VF
Parameter
Diode Forward Voltage
Conditions
Min.
Typ.
Max Units
IC = 3A
2.5
V
Cob
tSTG
tF
Output Capatitance
Storage Time
Fall Time
VCB = 10V, IE = 0, f = 1MHz
60
pF
µs
µs
µs
ns
3
VCC = 125V, IC = 5A
I
B1 = -IB2 = 1A, RL = 50Ω
0.7
2.3
150
tSTG
tF
Storage Time
Fall Time
VCC = 30V, IC = 5A, L=200µH
B1=1A, RBB = 0Ω, VBE(OFF)= -5V
CLAMP = 250V
I
V
* Pulse test: PW=300µs, Duty cycle=2%
h
Classification
FE
Classification
hFE1
H1
15 ~ 28
H2
26 ~ 39
2
www.fairchildsemi.com
FJP3307D Rev. 1.0.0
Typical Performance Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain (H1 Grade)
5.0
4.5
100
VCE = 5V
TC = 75 o
C
IB=300mA
4.0
TC = 125 o
C
3.5
3.0
TC = - 25 o
C
TC = 25 o
C
2.5
10
IB=100mA
2.0
1.5
1.0
0.5
0.0
IB=50mA
1
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. DC Current Gain (H2 Grade)
Figure 4. Collector-Emitter Saturation Voltage
100
10
IC = 5 IB
VCE = 5V
TC = 75 o
C
TC = 125 o
C
TC = 125 o
C
TC = - 25 o
C
TC = 25 o
C
1
0.1
TC = 75 o
C
TC = 25 o
C
10
TC = - 25 o
C
1
0.1
0.01
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Output Capacitance
10
1000
100
10
IC = 5 IB
f = 1MHz, IE = 0
TC = 25 o
C
TC = - 25 o
C
1
TC = 125 o
C
TC = 75 o
C
0.1
0.01
0.1
1
10
1
10
100
IC [A], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
3
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FJP3307D Rev. 1.0.0
Typical Performance Characteristics (Continued)
Figure 7. Power Derating
Figure 8. Reverse Biased Safe Operating Area
100
80
60
40
20
0
100
10
1
VCC = 50V, IB1 = - IB2 = 1A
L = 1mH
0.1
0
25
50
75
100
125
150
175
200
10
100
1000
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Biased Safe Operating Area
100
IC(MAX), Pulse
10µs
10
100µs
1ms
IC(MAX), DC
1
0.1
TC = 25 oC
Single Pulse
0.01
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
4
www.fairchildsemi.com
FJP3307D Rev. 1.0.0
Mechanical Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
5
www.fairchildsemi.com
FJP3307D Rev. 1.0.0
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
PowerTrench
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
QFET
QS™
®
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
MSXPro™
OCX™
®
UltraFET
i-Lo™
ImpliedDisconnect™
IntelliMAX™
UniFET™
VCX™
Wire™
OCXPro™
OPTOLOGIC
®
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Across the board. Around the world.™
®
The Power Franchise
SuperFET™
SuperSOT™-3
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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