FJPF5321 [FAIRCHILD]

NPN Triple Diffused Planar Silicon Transistor; NPN型三重扩散平面硅晶体管
FJPF5321
型号: FJPF5321
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN Triple Diffused Planar Silicon Transistor
NPN型三重扩散平面硅晶体管

晶体 晶体管 功率双极晶体管 开关 局域网
文件: 总6页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FJPF5321  
High Voltage and High Reliability  
High speed Switching  
Wide Safe Operating Area  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
800  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
CEO  
EBO  
7
V
I
I
I
I
5
A
C
10  
A
CP  
B
2
A
*Base Current (Pulse)  
4
40  
A
BP  
P
Power Dissipation(T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* Pulse Test: Pulse Width = 5ms, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
800  
500  
7
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 1mA, I = 0  
-
-
-
-
-
-
CBO  
CEO  
EBO  
C
C
C
E
BV  
BV  
= 5mA, I = 0  
-
V
B
=1mA, I = 0  
-
V
C
I
I
V
V
= 800V, I = 0  
-
100  
10  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= 7V, I = 0  
-
C
h
h
DC Current Gain  
V
V
= 5V, I = 0.6A  
15  
8
-
-
40  
-
FE1  
FE2  
CE  
CE  
C
= 5V, I = 3A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain bandwidth Product  
Output Capacitance  
Input Capacitance  
Turn On Time  
I
I
= 3A, I = 0.6A  
-
-
-
-
1.0  
1.5  
-
V
V
CE  
C
C
B
= 3A, I = 0.6A  
-
BE  
B
f
V
V
V
= 10V, I = 0.6A  
14  
MHz  
pF  
pF  
µs  
µs  
µs  
µs  
µs  
µs  
T
CE  
CB  
EB  
C
C
C
= 10V, I = 0, f = 1MHz  
-
-
-
65  
100  
2000  
0.5  
6.5  
0.3  
0.5  
3.0  
0.3  
ob  
ib  
E
= 7V, I = 0, f = 1MHz  
1400  
C
t
t
t
t
t
t
V
= 125V, I = 1A  
-
-
-
-
-
-
ON  
CC  
C
I
= -I = 0.2A  
Storage Time  
B1  
B2  
STG  
F
R = 125Ω  
L
Fall Time  
-
-
-
-
Turn On Time  
V
= 250V, I = 4A  
CC C  
ON  
STG  
F
I
= 0.8A, I = -1.6A  
Storage Time  
B1  
B2  
R = 62.5Ω  
L
Fall Time  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
3.1  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
Typical Characteristics  
5.0  
4.5  
100  
10  
1
VCE = 5 V  
TC = 125oC  
TC = 75oC  
IB = 350mA  
4.0  
3.5  
3.0  
TC = - 25oC  
TC = 25oC  
IB = 150mA  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
IB = 100mA  
IB = 50mA  
0
1
2
3
4
5
6
7
8
9
10  
0.01  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
10  
IC = 5 IB  
IC = 5 IB  
TC = 125oC  
1
TC = 75oC  
TC = 25oC  
TC = - 25oC  
TC = - 25oC  
TC = 125oC  
1
0.1  
TC = 75oC  
TC = 25oC  
0.01  
0.1  
0.1  
0.1  
1
10  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 3. Saturation Voltage  
Figure 4. Saturation Voltage  
100  
IC MAX (Pulse)  
IC MAX (DC)  
50µs  
10  
10  
1
10ms  
1ms  
100µs  
0.1  
0.01  
IB1=3A, RB2=0  
L=1mH, VCC=20V  
1
10  
100  
1000  
1
10  
100  
1000  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Reverse Bias Safe Operating Area  
Figure 6. Forward Bias Safe Operating Area  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
Typical Characteristics (Continued)  
60  
50  
40  
30  
20  
10  
0
10  
1
0.1  
IB1=0.2A, IB2=-0.2A  
VCC=125V  
0.01  
0.1  
1
10  
0
25  
50  
75  
100  
125  
150  
175  
IC [A], COLLECTOR CURRENT  
TC[oC], CASE TEMPERATURE  
Figure 7. Resistive Load Switching Time  
Figure 8. Power Derating  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
Package Dimensions  
TO-220F  
2.54 ±0.20  
10.16 ±0.20  
ø3.18 ±0.10  
(7.00)  
(0.70)  
(1.00x45°)  
MAX1.47  
0.80 ±0.10  
(30  
°
)
#1  
0.35 ±0.10  
+0.10  
–0.05  
0.50  
2.76 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
9.40 ±0.20  
Dimensions in Millimeters  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT Quiet Series™ LittleFET™  
Power247™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
ActiveArray™  
Bottomless™  
CoolFET™  
FAST®  
MICROCOUPLER™ PowerTrench®  
FASTr™  
FRFET™  
MicroFET™  
MicroPak™  
QFET®  
QS™  
CROSSVOLT™ GlobalOptoisolator™ MICROWIRE™  
QT Optoelectronics™ TinyLogic®  
DOME™  
GTO™  
HiSeC™  
I2C™  
ImpliedDisconnect™ OCXPro™  
ISOPLANAR™  
MSX™  
MSXPro™  
OCX™  
Quiet Series™  
TINYOPTO™  
TruTranslation™  
UHC™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
RapidConfigure™  
RapidConnect™  
SILENT SWITCHER® UltraFET®  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
POP™  
SMART START™  
SPM™  
Stealth™  
VCX™  
Across the board. Around the world.™  
The Power Franchise™  
Programmable Active Droop™  
SuperFET™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2003 Fairchild Semiconductor Corporation  
Rev. I6  

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