FJPF6806DTU [FAIRCHILD]
Transistor,;
| 型号： | FJPF6806DTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor, 晶体 晶体管 功率双极晶体管 开关 局域网 |
| 文件： | 总5页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJPF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
•
•
•
High Collector-Base Breakdown Voltage : BV
= 1500V
CBO
High Switching Speed : t (typ.) =0.1µs
F
For Color TV
TO-220F
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
50
Ω typ.
E
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Rating
1500
750
6
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
CBO
CEO
EBO
V
V
I
I
6
A
C
*
12
A
CP
P
40
W
°C
°C
C
J
T
150
T
-55 ~ 150
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
Test Conditions
Min
Typ
Max
1
Units
mA
µA
I
I
I
V
V
V
=1400V, R =0
CES
CB
CB
EB
BE
=800V, I =0
10
CBO
EBO
E
=4V, I =0
40
6
200
mA
V
C
BV
I =300mA, I =0
E C
EBO
h
h
V
V
=5V, I =1A
8
4
FE1
FE2
CE
CE
C
=5V, I =4A
7
5
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Storage Time
I =4A, I =1A
V
V
CE
C
B
I =4A, I =1A
1.5
2
BE
C
B
V
I = 4.5A
V
F
F
t
*
V
=200V, I =4A, R =50Ω
3
µs
µs
STG
CC
C
L
I
=1.0A, I = - 2.0A
B2
t *
Fall Time
B1
0.2
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Typ
Max
3.1
Units
°C/W
R
Thermal Resistance, Junction to Case
θjC
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Typical Characteristics
8
7
6
5
4
3
2
1
0
100
10
1
VCE = 5V
IB = 2.0A
Ta = 125oC
IB = 0.8A
IB = 0.6A
Ta = 25oC
IB = 0.4A
IB = 0.2A
Ta = - 25oC
0
2
4
6
8
10
0.1
1
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
Ta = 125oC
IC = 5 IB
Ta = 125oC
IC = 3 IB
Ta = 25oC
1
1
Ta = 25oC
Ta = - 25oC
Ta = - 25oC
0.1
0.1
0.01
0.1
0.01
0.1
1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
VCE = 5 V
8
6
tSTG
1
Ta = 25 o
C
4
2
0
tF
Ta = 125 o
C
Ta = - 25 o
C
VCC = 200V,
IC = 4A, IB1 = 1A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
VBE [V], BASE-EMITTER ON VOLTAGE
IB2 [A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Typical Characteristics (Continued)
10
VCC = 200V,
tSTG
IC = 4A, IB2 = - 2A
tSTG
1
tF
1
tF
VCC = 200V,
IB1 = 1A,IB2 = - 2A
0.1
0.1
1
1
10
IC [A], COLLECTOR CURRENT
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
100
15
RB2 = 0, IB1 = 15A
VCC = 30V, L = 200µH
IC (Pulse)
IC (DC)
t = 100ms t = 10ms
12
10
1
t = 1ms
9
6
VBE(off) = -3V
0.1
0.01
3
TC = 25oC
Single Pulse
1
10
1
10
100
1000
10000
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
Figure 10. Forward Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TC [oC], CASE TEMPERATURE
Figure 11. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Package Demensions
TO-220F
2.54 ±0.20
10.16 ±0.20
(7.00)
ø3.18 ±0.10
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
ACEx™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
SMART START™ VCX™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
POP™
HiSeC™
Power247™
I2C™
PowerTrench®
QFET™
ISOPLANAR™
LittleFET™
MicroFET™
QS™
TinyLogic™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
TruTranslation™
UHC™
FACT Quiet series™ MicroPak™
FAST®
MICROWIRE™
UltraFET®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7
相关型号：
FJPF9020TTU
Power Bipolar Transistor, 2A I(C), 550V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
FJPF9020TU
Power Bipolar Transistor, 2A I(C), 550V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明