FJPF9020TTU [FAIRCHILD]

Power Bipolar Transistor, 2A I(C), 550V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN;


型号：	FJPF9020TTU
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Bipolar Transistor, 2A I(C), 550V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN 局域网晶体管
文件：	总5页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FJPF9020

Monolithic Construction With Built In Base-Emitter

Shunt Resistors

•

High Collector-Base Breakdown Voltage : BV

= -550V

CBO

High DC Current Gain : h = 550 @ V = -4V, I = -1A (Typ.)

Industrial Use

TO-220F

1.Base 2.Collector 3.Emitter

PNP Epitaxial Darlington Transistor

Equivalent Circuit

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

- 550

- 6

Units

CBO

CEO

EBO

Collector Current (DC)

Collector Current (Pulse)

- 2

- 4

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

R1 600 Ω

R2 150 Ω

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

- 550

-6

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

= - 100uA, I = 0

CBO

CEO

EBO

= - 500uA, I = 0

I = - 200mA, I = 0

= - 550V, I = 0

-100

-20

µA

CBO

EBO

Emitter Cut-off Current

= - 6V, I = 0

-10

550

-1.0

-1.5

DC Current Gain

= - 4V, I = - 1A

400

700

- 1.5

- 2.0

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

= - 1A, I = - 20mA

Rev. A, June 2002

Typical Characteristics

-3.0

1000

100

V_CE= - 4V

I_B= - 40mA

-2.5

-2.0

-1.5

-1.0

-0.5

-0.0

125^oC

75^oC

I_B= - 15mA

25^oC

- 25^oC

I_B= - 3mA

I_B= - 1.5mA

- 0.03

-0

-1

-2

-3

-4

-5

-0.1

-1

- 4

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 1. Static Characterstic

Figure 2. DC current Gain

-3

-2

-1

-0

-4

-3

-2

-1

-0

I_C/ I_B= 50

125^oC

75^oC

I_C= - 2A

I_C= - 1A

- 25^oC

25^oC

- 0.2

-1

- 4

-1E-3

-0.01

-0.1

- 0.4

I_B[A], BASE CURRENT

I_C[A], COLLECTOR CURRENT

Figure 3. V (sat) vs. I Characteristics

Figure 4. Collector-Emitter Saturation Voltage

-2.0

-1.5

-1.0

-0.5

-0.0

1000

V_CE= - 4V

f = 1MHz

100

125^oC

75^oC

25^oC

- 25^oC

-0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-0

-5

-10

-15

-20

-25

V_BE[V], BASE-EMITTER VOLTAGE

V_CB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Base-Emitter On Voltage

Figure 6. Output Capacitance

Rev. A, June 2002

Typical Characteristics ^(Continued)

-10

I_C(Pulse)

100ms

10ms

I_C(DC)

-1

-0.1

-0.01

-1E-3

Single Pulse

Ta=25^oC

-1

-10

-100

-1000

100

125

150

175

T_C[^oC], CASE TEMPERATURE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Forward Bias Safe Operating Area

Figure 8. Power Derating

Rev. A, June 2002

Package Demensions

TO-220F

2.54 ±0.20

10.16 ±0.20

(7.00)

ø3.18 ±0.10

(0.70)

(1.00x45°)

MAX1.47

0.80 ±0.10

(30

)

0.35 ±0.10

+0.10

–0.05

0.50

2.76 ±0.20

2.54TYP

[2.54 ±0.20

]

[2.54 ±0.20]

9.40 ±0.20

Dimensions in Millimeters

Rev. A, June 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

OPTOLOGIC^®

OPTOPLANAR™

PACMAN™

VCX™

ACEx™

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

SMART START™

SPM™

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Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

POP™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

HiSeC™

Power247™

I²C™

PowerTrench^®

QFET™

ISOPLANAR™

LittleFET™

MicroFET™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

FACT Quiet series™ MicroPak™

FAST^®

MICROWIRE™

UltraFET^®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H7

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