FJY3007R [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | FJY3007R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总4页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2006
FJY3007R
tm
NPN Epitaxial Silicon Transistor
Features
•
•
•
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R1=22KΩ, R2=47KΩ)
Complement to FJY4007R
Eqivalent Circuit
C
C
S07
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
50
50
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
10
V
I
Collector Current
100
mA
°C
C
TSTG
TJ
Storage Temperature Range
Junction Temperature
-55~150
150
°C
P
Collector Power Dissipation, by RθJA
200
mW
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max
Units
RθJA
Thermal Resistance, Junction to Ambient
600
°C/W
* Minimum land pad size.
Electrical Characteristics*
T = 25°C unless otherwise noted
C
Symbol
V(BR)CBO
V(BR)CEO
ICBO
Parameter
Test Condition
MIN
Typ MAX
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
IC = 10 uA, IE = 0
50
50
V
V
IC = 100 uA, IB = 0
VCB = 40 V, IE = 0
0.1
uA
hFE
VCE = 5 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 10V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 5 V, IC = 100uA
VCE = 0.3V, IC = 2mA
68
VCE(sat)
fT
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
0.3
V
MHz
pF
V
250
3.7
Ccb
VI(off)
Input Off Voltage
0.4
VI(on)
R1
Input On Voltage
2.5
V
Input Resistor
15
22
29
KΩ
R1/R2
Resistor Ratio
0.42
0.47
0.52
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
FJY3007R Rev. A
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Input On Voltage
1000
100
VCE = 5V
VCE = 0.3V
R1 = 22K
R2 = 47K
R1 = 22K
R2 = 47K
10
100
10
1
1
0.1
0.1
1
10
100
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Input off Voltage
Figure 4. Power Derating
10k
280
240
200
160
120
80
VCE = 5V
R1 = 22K
R2 = 47K
1k
100
10
40
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
VI(off)[V], INPUT OFF VOLTAGE
2
www.fairchildsemi.com
FJY3007R Rev. A
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
www.fairchildsemi.com
FJY3007R Rev. A
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice to improve
design.
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Obsolete
Full Production
This datasheet contains final specifications. Fairchild
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any time without notice to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
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