FJY3012R [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | FJY3012R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总4页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2006
FJY3012R
tm
NPN Epitaxial Silicon Transistor
Features
•
•
•
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R=47KΩ)
Complement to FJY4012R
Eqivalent Circuit
C
C
S12
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
40
40
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
I
Collector Current
100
-55~150
150
200
mA
°C
C
TSTG
TJ
Storage Temperature Range
Junction Temperature
°C
P
Collector Power Dissipation, by RθJA
mW
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max
Units
RθJA
Thermal Resistance, Junction to Ambient
600
°C/W
* Minimum land pad size.
Electrical Characteristics*
T = 25°C unless otherwise noted
C
Symbol
V(BR)CBO
V(BR)CEO
ICBO
Parameter
Test Condition
MIN
Typ MAX
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
IC = 100 uA, IE = 0
40
40
V
V
IC = 1mA, IB = 0
VCB = 30 V, IE = 0
0.1
uA
hFE
DC Current Gain
VCE = 5 V, IC = 1 mA
IC = 10 mA, IB = 1 mA
VCE = 10V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
100
32
600
VCE(sat)
fT
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
0.3
V
250
3.7
MHz
pF
Ccb
R
Input Resistor
47
62
KΩ
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
FJY3012R Rev. A
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1000
1000
VCE = 5V
R = 47K
IC = 10IB
R = 47K
100
10
1
100
10
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Power Derating
280
240
200
160
120
80
40
0
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
2
www.fairchildsemi.com
FJY3012R Rev. A
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
www.fairchildsemi.com
FJY3012R Rev. A
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
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