FODM124VR2 [FAIRCHILD]

Transistor Output Optocoupler, 1-Element;
FODM124VR2
型号: FODM124VR2
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Transistor Output Optocoupler, 1-Element

文件: 总10页 (文件大小:643K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
February 2007  
FODM121 Series, FODM124, FODM2701 Series, FODM2705  
4-Pin Full Pitch Mini-Flat Package Transistor Output  
Optocouplers  
Features  
Applications  
>5mm creepage/clearance  
Compact 4-pin surface mount package  
(2.4mm maximum standoff height)  
Current Transfer Ratio in selected groups  
DC Input:  
Digital logic inputs  
Microprocessor inputs  
Power supply monitor  
Twisted pair line receiver  
Telephone line receiver  
FODM121: 50–600%  
FODM2701: 50–300%  
FODM121A: 100–300% FODM2701A: 150–300%  
Description  
FODM121B: 50–150%  
FODM2701B: 80–160%  
FODM121C: 100–200% FODM124: 100% MIN  
FODM121D: 50–100%  
FODM121E: 150–300%  
FODM121F: 100–600%  
FODM121G: 200–400%  
The FODM124, FODM121, and FODM2701 series con-  
sists of a gallium arsenide infrared emitting diode driving  
a phototransistor in a compact 4-pin mini-flat package.  
The lead pitch is 2.54 mm. The FODM2705 series con-  
sists of two gallium arsenide infrared emitting diodes  
connected in inverse parallel for AC operation.  
AC Input:  
FODM2705: 50–300%  
Available in tape and reel quantities of 500 and 2500  
Applicable to Infrared Ray reflow  
(260°C max, 10 seconds)  
C-UL, UL and VDE* certifications  
*option ‘V’ required  
Package Dimensions  
4.40 0.20  
1
4
COLLECTOR  
ANODE  
CATHODE 2  
3 EMITTER  
2.54  
Equivalent Circuit  
FODM121, FODM124, FODM2701  
3.85 0.20  
5.30 0.30  
2.00 0.20  
1
4
COLLECTOR  
ANODE  
0.20 0.05  
CATHODE 2  
3 EMITTER  
Equivalent Circuit  
FODM2705  
0.10 0.10  
+0.2  
–0.7  
0.40 0.10  
7.00  
Note:  
All dimensions are in millimeters.  
©2006 Fairchild Semiconductor Corporation  
FODMX Rev. 1.0.7  
1
www.fairchildsemi.com  
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Value  
Units  
TOTAL PACKAGE  
T
Storage Temperature  
Operating Temperature  
-40 to +125  
-40 to +110  
°C  
°C  
STG  
T
OPR  
EMITTER  
I
Continuous Forward Current  
Peak Forward Current (1µs pulse, 300 pps.)  
Reverse Input Voltage  
50  
1
mA  
A
F (avg)  
I
F (pk)  
V
P
6
V
R
D
Power Dissipation  
70  
0.65  
mW  
mW/°C  
Derate linearly (above 25°C)  
DETECTOR  
Continuous Collector Current  
Power Dissipation  
80  
150  
2.0  
40  
80  
7
mA  
mW  
P
D
Derate linearly (above 25°C)  
mW/°C  
V
V
Collector-Emitter Voltage  
Emitter-Collector Voltage  
FODM2701 Series, FODM2705  
FODM121 Series, FODM124  
CEO  
ECO  
V
V
Electrical Characteristics (T = 25°C)  
A
Individual Component Characteristics  
Symbol Parameter  
Test Conditions  
Device  
Min. Typ.* Max.  
Unit  
EMITTER  
V
Forward Voltage  
Reverse Current  
I = 10mA  
FODM121 Series  
FODM124  
1.0  
1.3  
1.4  
V
F
F
I = 5mA  
FODM2701 Series  
FODM2705  
F
I = ±5mA  
F
I
V = 5V  
FODM2701 Series  
FODM121 Series  
FODM124  
5
µA  
V
R
R
DETECTOR  
BV  
Breakdown Voltage  
Collector to Emitter  
I = 1mA, I = 0  
FODM121 Series  
FODM124  
80  
40  
7
CEO  
C
F
FODM2701 Series  
FODM2705  
BV  
Emitter to Collector  
I = 100µA, I = 0  
All  
All  
V
ECO  
E
F
I
Collector Dark  
Current  
V
= 40V, I = 0  
100  
nA  
CEO  
CE  
F
C
Capacitance  
V
= 0V, f = 1MHz  
All  
10  
pF  
CE  
CE  
2
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
Transfer Characteristics (T = 25°C)  
A
Symbol  
Characteristic  
Test Conditions  
Device  
Min. Typ.** Max. Unit  
CTR  
DC Current Transfer Ratio I = ±5mA, V = 5V  
FODM2705  
FODM2701  
50  
50  
300  
300  
300  
160  
600  
300  
150  
200  
100  
300  
600  
400  
%
F
CE  
I = 5mA, V = 5V  
F
CE  
FODM2701A 150  
FODM2701B  
FODM121  
FODM121A  
FODM121B  
FODM121C  
FODM121D  
FODM121E  
FODM121F  
FODM121G  
FODM121F  
FODM124  
FODM124  
FODM2705  
FODM2705  
FODM2701  
FODM2701A  
FODM2701B  
FODM121  
FODM121A  
FODM121B  
FODM121C  
FODM121D  
FODM121E  
FODM121F  
FODM121G  
FODM121F  
FODM124  
All  
80  
50  
I = 5mA, V = 5V  
F
CE  
100  
50  
100  
50  
150  
100  
200  
30  
I = 1mA, V = 0.4V  
F
CE  
I = 1mA, V = 0.5V  
100  
50  
1200  
F
CE  
I = 0.5mA, V = 1.5V  
F
CE  
CTR Symmetry  
I = ±5mA, V = 5V  
0.3  
3.0  
0.3  
0.3  
0.3  
0.3  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
F
CE  
V
Saturation Voltage  
I = ±10mA, I = 2mA  
V
CE (SAT)  
F
C
I = 10mA, I = 2mA  
F
C
I = 8mA, I = 2.4mA  
F
C
I = 1mA, I = 0.2mA  
F
C
I = 1mA, I = 0.5mA  
F
C
t
Rise Time (Non-Saturated) I = 2mA, V = 5V,  
3
3
µs  
µs  
r
C
CE  
R = 100Ω  
L
t
Fall Time (Non-Saturated) I = 2mA, V = 5V,  
All  
f
C
CE  
R = 100Ω  
L
Isolation Characteristics  
Characteristic  
Test Conditions Symbol Device Min. Typ.* Max.  
Unit  
(1)  
Steady State Isolation Voltage  
1 Minute  
V
All  
3750  
VRMS  
ISO  
*All typicals at T = 25°C  
A
Note:  
1. Steady state isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are  
ISO  
common, and pins 3 and 4 are common.  
3
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
Typical Performance Curves  
Fig. 2 Collector-Emitter Saturation Voltage vs.  
Ambient Temperature (FODM121/2701/2705)  
Fig. 1 Forward Current vs. Forward Voltage  
100  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
= 110oC  
T
A
70oC  
I
= 8mA  
25oC  
0oC  
F
I
= 2.4mA  
C
-40oC  
10  
I
= 10mA  
= 2mA  
F
I
C
1
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
V
- Forward Voltage (V)  
T
- Ambient Temperature (°C)  
F
A
Fig. 3 Current Transfer Ratio vs. Forward Current  
(FODM121/2701/2705)  
Fig. 4 Collector Current vs. Forward Current  
(FODM121/2701/2705)  
100  
10  
1
T
= 25oC  
A
T
= 25oC  
A
V
= 10V  
CE  
V
= 10V  
V
= 5V  
CE  
CE  
V
= 5V  
CE  
100  
0.1  
10  
0.1  
1
10  
100  
0.1  
1
10  
100  
I
- Forward Current (mA)  
I
- Forward Current (mA)  
F
F
Fig. 6 Collector Current vs. Collector-Emitter  
Voltage (FODM121/2701/2705)  
Fig. 5 Collector Current vs. Ambient Temperature  
(FODM121/2701/2705)  
100  
T
= 25oC  
A
I
= 25mA  
40  
30  
20  
10  
0
F
I
= 50mA  
F
I
= 40mA  
F
10  
1
I
= 10mA  
F
I
= 30mA  
F
I
= 5mA  
F
I
= 20mA  
F
I
= 1mA  
F
I
= 10mA  
F
I
= 0.5mA  
F
0.1  
I
= 5mA  
= 1mA  
F
V
= 5V  
CE  
I
F
0.01  
0
2
4
6
8
10  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
V
- Collector-Emitter Voltage (V)  
T
- Ambient Temperature (°C)  
CE  
A
4
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
Fig 7. Collector Dark Current vs. Ambient  
Temperature (FODM121/2701/2705)  
Fig. 8 Normalized Current Transfer Ratio vs.  
Ambient Temperature (FODM121/2701/2705)  
10000  
1000  
100  
10  
160  
140  
120  
100  
80  
o
I
= 5mA  
= 5V  
Normalized to T = 25 C  
A
F
V
CE  
V
= 40V  
CE  
60  
1
40  
0.1  
-40  
20  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
T
- Ambient Temperature (°C)  
T - Ambient Temperature (°C)  
A
A
Fig. 9 Switching Time vs. Load Resistance  
(FODM121/2701/2705)  
Fig. 10 Collector-Emitter Saturation Voltage  
vs. Ambient Temperature (FODM124)  
1000  
100  
10  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
I
= 1mA  
I
= 5mA  
V
= 5V  
I = 16mA  
F
F
F
CC  
I
= 0.5mA  
o
C
T
= 25 C  
A
t
OFF  
t
S
t
ON  
1
-40  
-20  
0
20  
40  
60  
80  
100  
120  
1
10  
100  
T
- Ambient Temperature (°C)  
R - Load Resistance (kΩ)  
A
L
Fig. 11 Current Transfer Ratio vs.  
Forward Current (FODM124)  
Fig 12. Collector Current vs. Forward Current  
(FODM124)  
T
= 25°C  
= 0.5V  
A
T
= 25°C  
= 0.5V  
A
V
CE  
V
CE  
10  
1
100  
0.1  
0.01  
10  
0.1  
1
10  
0.1  
1
10  
I
- Forward Current (mA)  
I - Forward Current (mA)  
F
F
5
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
Fig. 14 Collector Current vs. Collector-Emitter Voltage  
(FODM124)  
Fig 13. Collector Current vs. Ambient Temperature  
(FODM124)  
10  
o
T
= 25 C  
V
= 0.5V  
A
CE  
I
= 10mA  
= 5mA  
8
6
4
2
0
F
I
= 10mA  
I
= 5mA  
F
F
10  
I
F
I
I
= 2mA  
= 1mA  
F
F
1
I
= 2mA  
= 1mA  
F
I
= 0.5mA  
F
I
F
I
= 0.5mA  
F
0.1  
-40  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
-20  
0
20  
40  
60  
80  
100  
120  
V
- Collector-Emitter Voltage (V)  
T
- Ambient Temperature (°C)  
CE  
A
Fig. 16 Normalized Current Transfer Ratio vs.  
Ambient Temperature (FODM124)  
Fig. 15 Collector Dark Current vs. Ambient  
Temperature (FODM124)  
160  
140  
120  
100  
80  
I
= 1mA,  
= 0.5V  
CE  
Normalized to T = 25°C  
A
F
V
= 40V  
CE  
V
10000  
1000  
100  
10  
60  
1
40  
20  
0.1  
-40  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-20  
0
20  
40  
60  
80  
100  
120  
T
- Ambient Temperature (°C)  
T
- Ambient Temperature (°C)  
A
A
Fig. 17 Switching Time vs. Load Resistance (FODM124)  
V
= 5V  
= 1mA  
= 25°C  
CC  
I
F
T
A
1000  
100  
10  
t
OFF  
t
S
t
ON  
1
1
10  
100  
R - Load Resistance (kΩ)  
L
6
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
Ordering Information  
Option  
V
Description  
VDE Approved  
R1  
Tape and Reel (500 units)  
R2  
Tape and Reel (2500 units)  
R1V  
R2V  
Tape and Reel (500 units) and VDE Approved  
Tape and Reel (2500 units) and VDE Approved  
Marking Information  
1
2
121  
6
V X YY R  
3
4
5
Definitions  
1
2
3
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE option –  
See order entry table)  
4
5
6
One digit year code  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
7
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
P
2
D0  
P
0
t
K0  
E
A0  
W
W
1
B0  
F
d
D1  
P
2.54 Pitch  
Description  
Symbol  
Dimensions (mm)  
12.00 0.4  
0.35 0.02  
4.00 0.20  
1.55 0.20  
1.75 0.20  
5.50 0.20  
2.00 0.20  
8.00 0.20  
4.75 0.20  
7.30 0.20  
2.30 0.20  
1.55 0.20  
9.20  
Tape Width  
W
t
Tape Thickness  
Sprocket Hole Pitch  
Sprocket Hole Dia.  
P
0
D0  
E
Sprocket Hole Location  
Pocket Location  
F
P2  
P
Pocket Pitch  
Pocket Dimension  
A0  
B0  
K0  
D1  
W1  
d
Pocket Hole Dia.  
Cover Tape Width  
Cover Tape Thickness  
0.065 0.02  
Max. Component Rotation or Tilt  
Devices Per Reel  
20° max  
500  
R1  
R2  
R1  
R2  
2500  
Reel Diameter  
178 mm (7")  
330 mm (13")  
8
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
Footprint Drawing for PCB Layout  
0.80  
1.00  
6.50  
2.54  
Note:  
All dimensions are in mm.  
Recommended Infrared Reflow Soldering Profile  
• Peak reflow temperature: 260°C (package surface temperature)  
• Time of temperature higher than 245°C: 40 seconds or less  
• Number of reflows: 3  
10s  
300  
250  
200  
150  
100  
50  
260°C  
245°C  
40s  
0
0
50  
100  
150  
200  
250  
300  
Time (s)  
9
www.fairchildsemi.com  
FODMX Rev. 1.0.7  
FAIRCHILD SEMICONDUCTOR TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT Quiet Series™  
GlobalOptoisolator™  
GTO™  
OCX™  
SILENT SWITCHER®  
SMART START™  
SPM™  
UniFET™  
VCX™  
Wire™  
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
CROSSVOLT™  
DOME™  
OCXPro™  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
POP™  
Power247™  
PowerEdge™  
PowerSaver™  
PowerTrench®  
QFET®  
HiSeC™  
Stealth™  
I2C™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TCM™  
TinyBoost™  
TinyBuck™  
i-Lo™  
ImpliedDisconnect™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT®  
FAST®  
FASTr™  
QS™  
QT Optoelectronics™ TinyPWM™  
FPS™  
FRFET™  
MICROWIRE™  
MSX™  
MSXPro™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TinyPower™  
TinyLogic®  
TINYOPTO™  
TruTranslation™  
UHC®  
Across the board. Around the world.™  
The Power Franchise®  
ScalarPump™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE  
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER  
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S  
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I22  
10  
www.fairchildsemi.com  
FODMX Rev. 1.0.7  

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SI9137DB

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SI9137LG

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SI9122E

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VISHAY