FODM2701BR2V [FAIRCHILD]
Transistor Output Optocoupler, 1-Element, 3750V Isolation, MINI-FLAT PACKAGE-4;型号: | FODM2701BR2V |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Transistor Output Optocoupler, 1-Element, 3750V Isolation, MINI-FLAT PACKAGE-4 |
文件: | 总11页 (文件大小:328K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
April 2009
FODM121 Series, FODM124, FODM2701 Series,
FODM2705
4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Features
Applications
■ 35mm creepage/clearance
■ Compact 4-pin surface mount package
(2.4mm maximum standoff height)
■ Current Transfer Ratio in selected groups
DC Input:
■ Digital logic inputs
■ Microprocessor inputs
■ Power supply monitor
■ Twisted pair line receiver
■ Telephone line receiver
FODM121: 50–600%
FODM2701: 50–300%
FODM121A: 100–300% FODM2701A: 150–300%
Description
FODM121B: 50–150%
FODM2701B: 80–160%
FODM121C: 100–200% FODM124: 100% MIN
FODM121D: 50–100%
FODM121E: 150–300%
FODM121F: 100–600%
FODM121G: 200–400%
The FODM124, FODM121, and FODM2701 series
consists of a gallium arsenide infrared emitting diode
driving a phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 2.54mm. The FODM2705
consists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
AC Input:
FODM2705: 50–300%
■ Available in tape and reel quantities of 2500
■ Applicable to Infrared Ray reflow (260°C max, 10 sec.)
■ C-UL, UL and VDE* certifications
*option ‘V’ required
Package Dimensions
4.40 0.20
1
4
COLLECTOR
ANODE
CATHODE 2
3 EMITTER
2.54
Equivalent Circuit
FODM121, FODM124, FODM2701
3.85 0.20
5.30 0.30
2.00 0.20
0.20 0.05
1
4
COLLECTOR
ANODE
CATHODE 2
3 EMITTER
0.10 0.10
+0.2
–0.7
0.40 0.10
7.00
Equivalent Circuit
FODM2705
Note:
All dimensions are in millimeters.
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL PACKAGE
T
Storage Temperature
Operating Temperature
-40 to +125
-40 to +100
°C
°C
STG
T
OPR
EMITTER
I
Continuous Forward Current
Peak Forward Current (1µs pulse, 300 pps.)
Reverse Input Voltage
50
1
mA
A
F (avg)
I
F (pk)
V
P
6
V
R
D
Power Dissipation
70
0.65
mW
mW/°C
Derate linearly (above 25°C)
DETECTOR
Continuous Collector Current
Power Dissipation
80
150
2.0
40
mA
mW
P
D
Derate linearly (above 25°C)
mW/°C
V
V
Collector-Emitter Voltage
FODM2701 Series,
FODM2705
CEO
ECO
FODM121 Series, FODM124
80
7
V
Emitter-Collector Voltage
V
Electrical Characteristics (T = 25°C)
A
Individual Component Characteristics
Symbol Parameter
Test Conditions
Device
Min. Typ.* Max.
Unit
EMITTER
V
Forward Voltage
Reverse Current
I = 10mA
FODM121 Series,
FODM124
1.0
1.3
1.4
V
F
F
I = 5mA
FODM2701 Series
FODM2705
F
I = ±5mA
F
I
V = 5V
FODM2701 Series
FODM121 Series
FODM124
5
µA
V
R
R
DETECTOR
BV
Breakdown Voltage
Collector to Emitter
I = 1mA, I = 0
FODM121 Series,
FODM124
80
40
7
CEO
C
F
FODM2701 Series,
FODM2705
BV
Emitter to Collector
I = 100µA, I = 0
All
All
–
V
ECO
E
F
I
Collector Dark
Current
V
= 40V, I = 0
100
nA
CEO
CE
F
C
Capacitance
V
= 0V, f = 1MHz
All
10
pF
CE
CE
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
2
Electrical Characteristics (Continued) (T = 25°C)
A
Transfer Characteristics
Symbol
Characteristic
Test Conditions
Device
Min. Typ.* Max. Unit
CTR
DC Current Transfer Ratio I = ±5mA, V = 5V
FODM2705
FODM2701
50
50
300
300
300
160
600
300
150
200
100
300
600
400
%
F
CE
I = 5mA, V = 5V
F
CE
FODM2701A 150
FODM2701B
FODM121
80
50
I = 5mA, V = 5V
F
CE
FODM121A
FODM121B
FODM121C
FODM121D
FODM121E
FODM121F
FODM121G
FODM121F
FODM124
100
50
100
50
150
100
200
30
I = 1mA, V = 0.4V
F
CE
I = 1mA, V = 0.5V
100
50
1200
F
CE
I = 0.5mA, V = 1.5V
FODM124
F
CE
CTR Symmetry
I = ±5mA, V = 5V
FODM2705
FODM2705
0.3
3.0
0.3
0.3
F
CE
V
Saturation Voltage
I = ±10mA, I = 2mA
V
CE (SAT)
F
C
I = 10mA, I = 2mA
FODM2701
Series
F
C
I = 8mA, I = 2.4mA
FODM121
Series
0.4
0.4
F
C
I = 1mA, I = 0.5mA
FODM124
All
F
C
t
Rise Time (Non-Saturated) I = 2mA, V = 5V,
3
3
µs
µs
r
C
CE
R = 100Ω
L
t
Fall Time (Non-Saturated) I = 2mA, V = 5V,
All
f
C
CE
R = 100Ω
L
Isolation Characteristics
Characteristic
Test Conditions Symbol Device Min. Typ.* Max.
Unit
(1)
Steady State Isolation Voltage
1 Minute
V
All
3750
VRMS
ISO
*All typicals at T = 25°C
A
Note:
1. Steady state isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
ISO
common, and pins 3 and 4 are common.
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Curves
Fig. 2 Collector-Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
Fig. 1 Forward Current vs. Forward Voltage
100
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
= 110oC
T
A
70oC
I
= 8mA
25oC
0oC
F
I
= 2.4mA
C
-40oC
10
I
= 10mA
= 2mA
F
I
C
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-40
-20
0
20
40
60
80
100
120
V
- Forward Voltage (V)
T
- Ambient Temperature (°C)
F
A
Fig. 3 Current Transfer Ratio vs. Forward Current
(FODM121/2701/2705)
Fig. 4 Collector Current vs. Forward Current
(FODM121/2701/2705)
100
10
1
T
= 25oC
A
T
= 25oC
A
V
= 10V
CE
V
= 10V
V
= 5V
CE
CE
V
= 5V
CE
100
0.1
10
0.1
1
10
100
0.1
1
10
100
I
- Forward Current (mA)
I
- Forward Current (mA)
F
F
Fig. 6 Collector Current vs. Collector-Emitter
Voltage (FODM121/2701/2705)
Fig. 5 Collector Current vs. Ambient Temperature
(FODM121/2701/2705)
100
T
= 25oC
A
I
= 25mA
40
30
20
10
0
F
I
= 50mA
F
I
= 40mA
F
10
1
I
= 10mA
F
I
= 30mA
F
I
= 5mA
F
I
= 20mA
F
I
= 1mA
F
I
= 10mA
F
I
= 0.5mA
F
0.1
I
= 5mA
= 1mA
F
V
= 5V
CE
I
F
0.01
0
2
4
6
8
10
-40
-20
0
20
40
60
80
100
120
V
- Collector-Emitter Voltage (V)
T
- Ambient Temperature (°C)
CE
A
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
4
Fig 7. Collector Dark Current vs. Ambient
Temperature (FODM121/2701/2705)
Fig. 8 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM121/2701/2705)
10000
1000
100
10
160
140
120
100
80
o
I
= 5mA
= 5V
Normalized to T = 25 C
A
F
V
CE
V
= 40V
CE
60
1
40
0.1
-40
20
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
T
- Ambient Temperature (°C)
T - Ambient Temperature (°C)
A
A
Fig. 9 Switching Time vs. Load Resistance
(FODM121/2701/2705)
Fig. 10 Collector-Emitter Saturation Voltage
vs. Ambient Temperature (FODM124)
1000
100
10
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
I
= 1mA
I
= 5mA
V
= 5V
I = 16mA
F
F
F
CC
I
= 0.5mA
o
C
T
= 25 C
A
t
OFF
t
S
t
ON
1
-40
-20
0
20
40
60
80
100
120
1
10
100
T
- Ambient Temperature (°C)
R - Load Resistance (kΩ)
A
L
Fig. 11 Current Transfer Ratio vs.
Forward Current (FODM124)
Fig 12. Collector Current vs. Forward Current
(FODM124)
T
= 25°C
= 0.5V
A
T
= 25°C
= 0.5V
A
V
CE
V
CE
10
1
100
0.1
0.01
10
0.1
1
10
0.1
1
10
I
- Forward Current (mA)
I - Forward Current (mA)
F
F
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
5
Fig. 14 Collector Current vs. Collector-Emitter Voltage
(FODM124)
Fig 13. Collector Current vs. Ambient Temperature
(FODM124)
10
o
T
= 25 C
V
= 0.5V
A
CE
I
= 10mA
= 5mA
8
6
4
2
0
F
I
= 10mA
I
= 5mA
F
F
10
I
F
I
I
= 2mA
= 1mA
F
F
1
I
= 2mA
= 1mA
F
I
= 0.5mA
F
I
F
I
= 0.5mA
F
0.1
-40
0.0
0.2
0.4
0.6
0.8
1.0
-20
0
20
40
60
80
100
120
V
- Collector-Emitter Voltage (V)
T
- Ambient Temperature (°C)
CE
A
Fig. 16 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM124)
Fig. 15 Collector Dark Current vs. Ambient
Temperature (FODM124)
160
140
120
100
80
I
= 1mA,
= 0.5V
CE
Normalized to T = 25°C
A
F
V
= 40V
CE
V
10000
1000
100
10
60
1
40
20
0.1
-40
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
T
- Ambient Temperature (°C)
T
- Ambient Temperature (°C)
A
A
Fig. 17 Switching Time vs. Load Resistance (FODM124)
V
= 5V
= 1mA
= 25°C
CC
I
F
T
A
1000
100
10
t
OFF
t
S
t
ON
1
1
10
100
R - Load Resistance (kΩ)
L
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
6
Ordering Information
Option
V
Description
VDE Approved
R2
Tape and Reel (2500 units)
Tape and Reel (2500 units) and VDE Approved
R2V
Marking Information
1
2
121
6
V X YY R
3
4
5
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
5
6
One digit year code
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
7
Carrier Tape Specifications
P
2
D0
P
0
t
K0
E
A0
W
W
1
B0
F
d
D1
P
2.54 Pitch
Description
Symbol
Dimensions
12.00 0.4
0.35 0.02
4.00 0.20
1.55 0.20
1.75 0.20
5.50 0.20
2.00 0.20
8.00 0.20
4.75 0.20
7.30 0.20
2.30 0.20
1.55 0.20
9.20
Tape Width
W
t
Tape Thickness
Sprocket Hole Pitch
Sprocket Hole Dia.
Sprocket Hole Location
Pocket Location
P
0
D0
E
F
P2
P
Pocket Pitch
Pocket Dimension
A0
B0
K0
D1
W1
d
Pocket Hole Dia.
Cover Tape Width
Cover Tape Thickness
0.065 0.02
Max. Component Rotation or Tilt
Devices Per Reel
20° max
2500
Reel Diameter
330 mm (13")
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
8
Footprint Drawing for PCB Layout
0.80
1.00
6.50
2.54
Note:
All dimensions are in mm.
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
9
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
S
Ramp-up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60–150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp-down Rate (T to T )
6°C/second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
10
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
The Power Franchise®
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
FAST®
®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
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customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2006 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.1.0
www.fairchildsemi.com
11
相关型号:
FODM2701R1V
Transistor Output Optocoupler, 1-Element, 3750V Isolation, MINI-FLAT PACKAGE-4
FAIRCHILD
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