FPN660J18Z [FAIRCHILD]
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE, 3 PIN;
| 型号： | FPN660J18Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE, 3 PIN |
| 文件： | 总8页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FPN660
FPN660A
TO-226
C
B
E
PNP Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process PA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
60
80
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current - Continuous
Operating and Storage Junction Temperature Range
3.0
-55 to +150
TJ, Tstg
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FPN660 / FPN660A
PD
Total Device Dissipation
1.0
W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
50
RθJC
RθJA
°C/W
°C/W
125
1999 Fairchild Semiconductor Corporation
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 10 mA, IB = 0
60
V
BVCBO
BVEBO
ICBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
80
V
V
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
5.0
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 100°C
VEB = 4.0 V, IC = 0
100
10
100
nA
µA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 100 mA, VCE = 2.0 V
70
100
250
80
300
550
I
C = 500 mA, VCE = 2.0 V
660
660A
I
C = 1.0 A, VCE = 2.0 V
40
IC = 2.0 A, VCE = 2.0 V
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA
IC = 2.0 A, IB = 200 mA
300
450
400
mV
mV
mV
VCE(sat)
660
660A
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 2.0 V
1.25
V
VBE(sat)
VBE(on)
1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
45
pF
Cobo
FT
Transition Frequency
IC = 100 mA, VCE = 5.0 V,
f = 100 MHz
75
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
PNP Low Saturation Transistor
(continued)
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter On Voltage vs.
Collector Current
1.4
1.6
1.4
1.2
1
Vce = 2.0V
β = 10
1.2
1
- 40°C
0.8
- 40°C
0.8
0.6
0.4
0.2
25°C
0.6
25°C
125°C
0.4
125°C
0.2
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
I C- COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
Input/Output Capacitance vs.
Reverse Bias Voltage
0.8
400
350
300
250
200
150
100
50
f = 1.0MHz
β = 10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Cobo
125°C
25°C
Cibo
- 40°C
0
0.1
0.5
1
10 20
50 100
0.01
0.1
1
10
VCE - COLLECTOR VOLTAGE (V)
I C - COLLECTOR CURRENT (A)
Current Gain vs. Collector Current
Power Dissipation vs
Ambient Temperature
1000
Vce = 2.0V
125°C
900
800
700
600
500
400
300
200
100
0
1
0.75
0.5
0.25
0
TO-226
25°C
- 40°C
0
25
50
75
100
125
150
0.0001
0.001
0.01
0.1
1
10
TE MPE RATURE ( C)
I C - COLLECTOR CURRENT (A)
°
TO-226AE Tape and Reel Data
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
For leadformed option ordering,
refer to Tape & Reel data information.
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
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product development. Specifications may change in
any manner without notice.
Preliminary
First Production
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Obsolete
Full Production
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Rev. G
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