概述
规格参数
数据手册FQB22P10TM_F085 概述
100V P-Channel MOSFET 100V P沟道MOSFET 功率场效应晶体管
FQB22P10TM_F085 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Transferred | 零件包装代码： | D2PAK |
| 包装说明： | ROHS COMPLIANT, D2PAK-3 | 针数： | 2 |
| Reach Compliance Code： | not_compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.29.00.95 | 风险等级： | 5.68 |
| 雪崩能效等级（Eas）： | 710 mJ | 外壳连接： | DRAIN |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 100 V |
| 最大漏极电流 (Abs) (ID)： | 22 A | 最大漏极电流 (ID)： | 22 A |
| 最大漏源导通电阻： | 0.125 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PSSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 175 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 245 | 极性/信道类型： | P-CHANNEL |
| 最大功率耗散 (Abs)： | 125 W | 最大脉冲漏极电流 (IDM)： | 88 A |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
FQB22P10TM_F085 数据手册
通过下载FQB22P10TM_F085数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载February 2009
QFET®
FQB22P10TM_F085
100V P-Channel MOSFET
General Description
Features
@V = -10 V
= 0.125Ω
DS(on)
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
•
•
•
•
•
•
•
-22A, -100V, R
GS
)
Low gate charge ( typical 40 nC
Low Crss ( typical 160 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
p
175°C maximum junction tem erature rating
•
•
Qualified to AEC Q101
RoHS Compliant
D
D
G
G
S
D2-PAK
FQB Series
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB22P10TM_F085
Units
V
V
I
Drain-Source Voltage
-100
-22
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
-15.6
-88
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
±30
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
710
mJ
A
AS
-22
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
mJ
V/ns
W
AR
dv/dt
-6.0
Power Dissipation (T = 25°C) *
3.75
P
A
D
Power Dissipation (T = 25°C)
125
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.83
W/°C
°C
T , T
-55 to +175
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
1.2
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
40
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQB22P10TM_F085 Rev. A
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-100
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
I
= -250 µA, Referenced to 25°C
-0.1
V/°C
D
/
I
∆T
V
V
V
V
= -100 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -80 V, T = 125°C
-10
DS
GS
GS
C
I
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-2.0
--
--
-4.0
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -11 A
0.096 0.125
D
g
= -40 V, I = -11 A
(Note 4)
Forward Transconductance
--
13.5
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1170
460
160
1500
600
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
200
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
17
170
60
45
350
130
230
50
ns
ns
d(on)
V
= -50 V, I = -22 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
110
40
ns
Q
Q
Q
nC
nC
nC
g
V
V
= -80 V, I = -22 A,
DS
D
7.0
21
--
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-22
-88
-4.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -22 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -22 A,
110
0.6
ns
µC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.2mH, I = -22A, V = -25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ -22A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQB22P10TM_F085 Rev. A
2
www.fairchildsemi.com
Typical Characteristics
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
101
100
Bottom: -4.5 V
1
10
175℃
25℃
-55℃
0
10
※
Notes :
※
Notes :
μ
1. V = -40V
DS μ
1. 250 s Pulse Test
2. TC = 25
2. 250 s Pulse Test
℃
-1
10
-1
10
0
10
1
10
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0.0
VGS = - 10V
101
100
VGS = - 20V
175℃
25℃
※
Notes :
1. V = 0V
GS μ
2. 250 s Pulse Test
※
℃
Note: T = 25
J
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
-VSD , Source-DrainVoltage [V]
0
10
20
30
40
50
60
70
80
90
100
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3500
3000
2500
2000
1500
1000
500
12
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = -20V
VDS = -50V
10
8
C
iss
VDS = -80V
C
oss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
6
C
rss
4
2
※
Note : ID = -22 A
40
0
0
10
0
10
20
30
50
-1
0
10
1
10
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FQB22P10TM_F085 Rev. A
3
www.fairchildsemi.com
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
Notes:
1. V = 0 V
0.9
0.8
※
Notes :
2. IDG=S -250
A
μ
1. VGS = -10 V
2. ID = -11 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
100 µs
1 ms
10 ms
101
DC
100
※
Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
175
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
0 .2
0 .1
℃
/W M a x .
=
1 .2
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
1 0 -1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
FQB22P10TM_F085 Rev. A
4
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
-10V
90%
VDS
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
DUT
-10V
IAS
t p
BVDSS
FQB22P10TM_F085 Rev. A
5
www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
FQB22P10TM_F085 Rev. A
6
www.fairchildsemi.com
Package Dimensions
D2-PAK
4.50 ±0.20
9.90 ±0.20
+0.10
–0.05
1.30
0.10 ±0.15
2.40 ±0.20
0.80 ±0.10
1.27 ±0.10
+0.10
0.50
–0.05
2.54 TYP
2.54 TYP
10.00 ±0.20
(8.00)
(4.40)
10.00 ±0.20
(2XR0.45)
0.80 ±0.10
Dimensions in Millimeters
FQB22P10TM_F085 Rev. A
7
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FRFET®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Global Power ResourceSM
Green FPS™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Current Transfer Logic™
EcoSPARK®
™
EfficentMax™
EZSWITCH™ *
Saving our world, 1mW/W/kW at a time™
SmartMax™
™
SMART START™
TriFault Detect™
μSerDes™
SPM®
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
Fairchild®
Motion-SPM™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
OPTOLOGIC®
OPTOPLANAR®
®
FAST®
SyncFET™
FastvCore™
FlashWriter® *
FPS™
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
The Power Franchise®
F-PFS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I38
FQB22P10TM_F085 Rev. A
8
www.fairchildsemi.com
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