select brandShort,logo,brand from pdf_brand where id=10013 limit 1 FQB5N20TM_技术文档

FQB5N20TM [FAIRCHILD]

Power Field-Effect Transistor, 4.5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3;

FQB5N20TM


型号：	FQB5N20TM
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Field-Effect Transistor, 4.5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 开关脉冲晶体管
文件：	总9页 (文件大小：654K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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