FQB9N50CFTM [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET
| 型号： | FQB9N50CFTM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2006
TM
FRFET
FQB9N50CF
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
9A, 500V, RDS(on)
=
0.85 Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
Low gate charge ( typical 28nC)
Low Crss ( typical 24pF)
Fast switching
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
100% avalanche tested
Improved dv/dt capability
D
D
G
D2-PAK
G
S
FQB Series
S
Absolute Maximum Ratings
Symbol
Parameter
FQB9N50CF
Units
V
VDSS
ID
Drain-Source Voltage
500
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
9
5.7
A
A
(Note 1)
IDM
Drain Current
36
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
300
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
5
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
9.6
mJ
V/ns
W
4.5
173
- Derate above 25°C
1.38
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
FQB9N50CF
Units
°C/W
°C/W
°C/W
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
0.72
40
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQB9N50CF Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FQB9N50CF
Device
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
FQB9N50CFTM
FQB9N50CFTM_WS
FQB9N50CFS
D2-PAK
330mm
24mm
800
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500
--
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
0.57
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.5A
VDS = 40 V, ID = 4.5 A
2.0
--
--
4.0
0.85
--
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
0.7
6.5
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
790
130
24
1030
170
30
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250 V, ID = 9A,
--
--
--
--
--
--
--
18
65
93
64
28
4
45
140
195
125
35
ns
ns
RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 400 V, ID = 9A,
GS = 10 V
nC
nC
nC
V
Qgs
Qgd
--
15
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
9
36
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 9 A
--
V
VGS = 0 V, IS = 9 A,
100
300
ns
nC
dIF / dt = 100 A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, I = 9A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 9A, di/dt ≤ 200A/µs, V ≤ BV Starting T = 25°C
DSS, J
SD
DD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
www.fairchildsemi.com
FQB9N50CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101
101
150oC
Bottom : 4.5 V
-55oC
25oC
100
100
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-1
10
10
100
101
-1
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
VGS = 10V
101
1.5
1.0
100
VGS = 20V
150℃
※ Notes :
0.5
1. VGS = 0V
2. 250µ s Pulse Test
25℃
※ Note : T = 25℃
J
-1
10
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
10
1600
1200
800
400
0
VDS = 250V
C
8
iss
VDS = 400V
C
oss
6
4
2
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
※ Note : ID = 9A
0
-1
10
100
101
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FQB9N50CF Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
※ Notes :
1. VGS = 10 V
2. ID = 4.5 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
102
10
8
10 µs
100 µs
1ms
10ms
100ms
DC
101
100
6
Operation in This Area
is Limited by R DS(on)
4
10-1
* Notes :
1. TC = 25 o
C
2
2. TJ = 150 o
C
3. Single Pulse
10-2
100
0
25
101
102
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-SourceVoltage[V]
Figure 11. Transient Thermal Response Curve
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
PDM
t1
t2
* Notes :
1. ZθJC(t) = 0.72 0C/W Max.
2. Duty Factor, D=t1/t2
10-2
3. TJM - TC = PDM * ZθJC(t)
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
4
www.fairchildsemi.com
FQB9N50CF Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FQB9N50CF Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
www.fairchildsemi.com
FQB9N50CF Rev. A
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
7
www.fairchildsemi.com
FQB9N50CF Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be
an exhaustive list of all such trademarks.
®
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
SILENT SWITCHER
SMART START™
SPM™
UniFET™
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
UltraFET
VCX™
®
HiSeC™
Stealth™
Wire™
2
I C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
CROSSVOLT™
DOME™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
EcoSPARK™
2
E CMOS™
®
EnSigna™
FACT™
PowerTrench
®
QFET
®
FAST
QS™
FASTr™
FPS™
FRFET™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TinyPWM™
TinyPower™
MICROWIRE™
MSX™
®
TinyLogic
MSXPro™
TINYOPTO™
TruTranslation™
UHC™
Across the board. Around the world.™
®
The Power Franchise
ScalarPump™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
8
www.fairchildsemi.com
FQB9N50CF Rev. A
相关型号：
FQB9N50CTM
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
FAIRCHILD
FQB9N50TM
Power Field-Effect Transistor, 9A I(D), 500V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明