FQD12N20 [FAIRCHILD]

200V N-Channel MOSFET; 200V N沟道MOSFET

FQD12N20


型号：	FQD12N20
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	200V N-Channel MOSFET 200V N沟道MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总9页 (文件大小：687K)
下载：	下载PDF数据表文档文件

FQD12N20L

200V LOGIC N-Channel MOSFET

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154 FAIRCHILD

FQD12N20LTM

200V Logic Level N-Channel MOSFET

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57 FAIRCHILD

FQD12N20LTM_F085

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3

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0 FAIRCHILD

FQD12N20LTM_F085

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 ONSEMI

FQD12N20LTM-F085

Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 ONSEMI

FQD12N20TF

9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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0 ROCHESTER

FQD12N20TM

N-Channel QFET MOSFET 200 V, 9 A, 280 m

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24 FAIRCHILD

FQD12P10

100V P-Channel MOSFET

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371 FAIRCHILD

FQD12P10TF

9.4A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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3 ROCHESTER

FQD12P10TM

100V P-Channel MOSFET

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57 FAIRCHILD

FQD12P10TM

9.4A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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1 ROCHESTER

FQD12P10TM_AS004

POWER, FET

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0 FAIRCHILD

FQD12P10TM_F085

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3/2

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0 FAIRCHILD

FQD13N06

60V N-Channel MOSFET

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153 FAIRCHILD

FQD13N06_09

60V N-Channel MOSFET

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26 FAIRCHILD

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