FQI16N25C_技术文档

QFET^®

FQB16N25C/FQI16N25C

250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

Features

•

15.6A, 250V, R_DS(on)= 0.27Ω @V_GS= 10 V

Low gate charge ( typical 41 nC)

Low Crss ( typical 68 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supplies and motor controls.

D

{

D

●

◀

▲

●

G^{

I²-PAK

D²-PAK

G

S

FQI Series

FQB Series

G D S

{

S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

C

Symbol

V_DSS

Parameter

FQB16N25C / FQI16N25C

Units

V

A

Drain-Source Voltage

Drain Current

250

15.6

9.8

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

I_DM

(Note 1)

Drain Current

62.4

V_GSS

E_AS

I_AR

E_AR

dv/dt

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C)*

± 30

410

15.6

13.9

5.5

3.13

139

V

mJ

A

mJ

V/ns

W

(Note 2)

(Note 1)

(Note 3)

P_D

Power Dissipation (T_C= 25°C)

W

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

1.11

-55 to +150

W/°C

°C

T_J, T_STG

T_L

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

--

Max

0.9

40

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

--

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, March 2004

Electrical Characteristics

T = 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

V_GS= 0 V, I_D= 250 µA

_D= 250 µA, Referenced to 25°C

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

250

--

V

∆BV_DSS

I

0.31

V/°C

/

∆T_JCoefficient

I_DSS

V

_DS= 250 V, V_GS= 0 V

_DS= 200 V, T_C= 125°C

--

10

µA

nA

Zero Gate Voltage Drain Current

100

-100

I_GSSF

I_GSSR

V_GS= 30 V, V_DS= 0 V

V_GS= -30 V, V_DS= 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

On Characteristics

V_GS(th)

R_DS(on)

V_DS= V_GS, I_D= 250 µA

Gate Threshold Voltage

2.0

--

4.0

0.27

--

V

Ω

S

Static Drain-Source

V_GS= 10 V, I_D= 7.8 A

0.22

10.5

On-Resistance

Forward Transconductance

g_FS

V_DS= 40 V, I_D= 7.8 A

(Note 4)

--

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

--

830

170

68

1080

220

89

pF

V

_DS= 25 V, V_GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

f = 1.0 MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

--

15

130

135

105

41

40

270

280

220

53.5

--

ns

V_DD= 125 V, I_D= 15.6 A,

R_G= 25 Ω

(Note 4, 5)

ns

Q_g

Q_gs

Q_gd

nC

V_DS= 200 V, I_D= 15.6 A,

5.6

22.7

V_GS= 10 V

--

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

--

260

2.47

15.6

62.4

1.5

--

A

V

ns

µC

I_SM

V_SD

t_rr

V_GS= 0 V, I_S= 15.6 A

_GS= 0 V, I_S= 15.6 A,

dI_F/ dt = 100 A/µs

Drain-Source Diode Forward Voltage

Reverse Recovery Time

V

(Note 4)

Q_rr

Reverse Recovery Charge

--

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.7mH, I = 15.6A, V = 50V, R = 25 Ω, Starting T = 25°C

AS

DD

G

DSS,

J

3. I ≤ 15.6A, di/dt ≤ 300A/µs, V ≤ BV

Starting T = 25°C

J

SD

DD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. A, March 2004

Typical Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

10¹

10⁰

10¹

10⁰

150^oC

Bottom : 4.5 V

25^oC

-55^oC

※ Notes :

1. 250µ s Pulse Test

2. T_C= 25℃

※ Notes :

1. V_DS= 40V

2. 250µ s Pulse Test

-1

10

-1

10⁰

10¹

2

4

6

8

10

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.5

1.0

0.5

0.0

10¹

10⁰

V_GS= 10V

150℃

25℃

V_GS= 20V

※ Notes :

1. V_GS= 0V

※ Note : T = 25℃

2. 250µ s Pulse Test

J

-1

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0

10

20

30

40

50

V_SD, Source-Drain voltage [V]

I_D, Drain Current [A]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

3000

12

10

8

C

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

C

V_DS= 50V

V_DS= 125V

2500

2000

1500

1000

500

V_DS= 200V

C

iss

6

C

oss

C

4

rss

※ Notes :

1. V_GS= 0 V

2. f = 1 MHz

2

※ Note : I_D= 15.6A

0

-1

10⁰

10¹

0

10

20

30

40

50

10

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A, March 2004

Typical Characteristics (Continued)

1.2

1.1

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

※Notes :

0.9

0.8

1. V_GS= 0 V

2. I_D= 250 µ A

※ Notes :

1. V_GS= 10 V

2. I_D= 7.8 A

-100

-50

0

50

100

150

200

-100

-50

0

50

100

150

200

T_J, Junction Temperature [^oC]

T, Junction Temperature [^oC]

J

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

16

Operation in This Area

is Limited by R _DS(on)

2

10

12

8

100 µs

1 ms

10 ms

1

10

DC

0

10

※Notes :

4

1. T_C= 25 ^oC

2. T = 150 ^oC

J

3. Single Pulse

-1

0

10

0

1

2

25

50

75

100

125

150

10

T_C, Case Temperature [℃]

V , Drain-Source Voltage [V]

DS

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 9. Maximum Safe Operating Area

1 0 ⁰

D = 0 .5

※

N o te s

:

1 . _{θ J C}(t)

Z

= 0 .9 0 ℃ /W M a x.

0 .2

2 . D u ty F a c to r, D = t₁/t₂

1 0 ^-1

3 . T _{J M}

-

T _C

=

P _D

* Z _{θ J C}(t)

M

0 .1

0 .0 5

P_DM

0 .0 2

0 .0 1

t₁

s in g le p u ls e

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a ve P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev. A, March 2004

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

10V

Q_g

12V

200nF

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

L

1

2

----

--------------------

BV_DSS- V_DD

E_AS

=

LI_AS

V_DS

I _D

2

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. A, March 2004

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

V_DS

_

I _SD

L

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

V_GS

( Driver )

--------------------------

Gate Pulse Period

D =

10V

I_FM, Body Diode Forward Current

I _SD

( DUT )

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. A, March 2004

Package Dimensions

D²-PAK

4.50 ±0.20

9.90 ±0.20

+0.10

–0.05

1.30

0.10 ±0.15

2.40 ±0.20

0.80 ±0.10

1.27 ±0.10

+0.10

0.50

–0.05

2.54 TYP

10.00 ±0.20

(8.00)

(4.40)

10.00 ±0.20

(2XR0.45)

0.80 ±0.10

Dimensions in Millimeters

Rev. A, March 2004

Package Dimensions (Continued)

I²-PAK

4.50 ±0.20

9.90 ±0.20

+0.10

–0.05

1.30

1.27 ±0.10

1.47 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54 TYP

10.00 ±0.20

Dimensions in Millimeters

Rev. A, March 2004

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT Quiet series™ ISOPLANAR™

POP™

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GTO™

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I²C™

MSX™

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UHC™

RapidConfigure™

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Across the board. Around the world.™

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I8


型号：	FQI16N25C
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	250V N-Channel MOSFET 250V N沟道MOSFET
文件：	总9页 (文件大小：871K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FQI16N25C [FAIRCHILD]

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