FQNL2N50BTA_NL [FAIRCHILD]
Power Field-Effect Transistor, 0.35A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92L, 3 PIN;
| 型号： | FQNL2N50BTA_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 0.35A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92L, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2013
FQNL2N50B
N-Channel QFET® MOSFET
500 V, 0.35 A, 5.3 Ω
Description
Features
• 0.35 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V,
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
ID = 0.175 A
•
•
Low Gate Charge (Typ. 6 nC)
Low Crss (Typ. 4 pF)
D
G
S
G D S
TO-92L
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQNL2N50BTA
Unit
V
V
I
Drain-Source Voltage
500
0.35
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
0.22
A
C
I
(Note 1)
Drain Current
- Pulsed
1.4
A
DM
V
I
Gate-Source Voltage
± 30
V
GSS
(Note 1)
(Note 1)
(Note 2)
Avalanche Current
0.35
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
0.15
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)
1.5
D
C
- Derate above 25°C
0.012
-55 to +150
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
J
STG
T
300
°C
L
Thermal Characteristics
ꢀꢁꢂꢃꢄꢅ
ꢆꢇꢈꢇꢂꢉꢊꢉꢈ
Thermal Resistance, Junction-to-Ambient, Max.
FQNL2N50BTA
ꢋꢌꢍꢊ
+
6ꢀꢀ?
83
θꢀꢁ
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
AMMO
N/A
N/A
Quantity
TO-92L
FQNL2N50B
2000 units
FQNL2N50BTA
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
500
--
--
--
--
V
DSS
∆BV
/ ∆T
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.48
V/°C
D
J
I
V
V
V
V
= 500 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 400 V, T = 125°C
10
DS
GS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
= V , I = 250 µA
2.3
3.6
3.0
4.3
3.7
5.0
V
V
V
Gate Threshold Voltage
DS
GS
D
GS(th)
= V , I = 250 mA
DS
GS
D
R
g
Static Drain-Source
On-Resistance
DS(on)
V
V
= 10 V, I = 0.175 A
--
--
4.2
5.3
--
Ω
GS
DS
D
= 50 V, I = 0.175 A
Forward Transconductance
0.72
S
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
180
30
4
230
40
6
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
6
20
60
30
50
8.0
--
ns
ns
d(on)
V
= 250 V, I = 2.1 A,
DD
D
25
10
20
6.0
1.3
3.0
r
R
= 25 Ω
G
ns
d(off)
f
(Note 3)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 400 V, I = 2.1 A,
DS
D
= 10 V
gs
gd
GS
(Note 3)
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
0.35
1.4
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 0.35 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 2.1 A,
195
0.69
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2.
I
≤ 2.1 A, di/dt ≤ 200 A/µs, V ≤ BV
starting T = 25°C.
SD
DD
DSS, J
3
. Essentially independent of operating temperature.
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©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
2
Typical Characteristics
V
100 Top :
5GVS
10V
8.0V
7.0V
6.5V
6.0V
100
Bottom : 5.5 V
℃
150
-1
℃
25
10
℃
-55
※
Note:
μ
※
Note
1. 250 s Pulse Test
2. TC = 25
1. VDS = 50V
℃
μ
2. 250 s Pulse Test
-1
10
-2
10
8
-1
2
4
6
10
10
100
101
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
18
15
12
9
0
10
VGS = 10V
VGS = 20V
6
25℃
150
℃
※
Note:
3
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note: T = 25
J
-1
0
0.0
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
350
300
250
200
150
100
50
12
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
VDS = 100V
VDS = 250V
VDS = 400V
gd
10
8
C
iss
C
oss
6
4
※
Note :
1. V = 0 V
2. f GS1 MHz
C
rss
2
※
Note : ID = 2.1 A
6
0
0
10
0
1
2
3
7
5
4
-1
0
10
1
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
3
(Continued)
Typical Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※Note :
1. VGS = 0 V
2. ID = 250 μA
※
Note :
1. VGS = 10 V
2. ID = 1.05 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
101
100
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
1 s
-1
10
10 s
DC
-2
10
※
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-3
10
25
50
75
100
125
150
100
101
102
103
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 2
D = 0 .5
0 .2
1 0 1
0 .1
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
℃
/W M a x.
=
8 3
0 .0 5
0 .0 2
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
PDM
0 .0 1
1 0 0
t1
t2
s in g le p u ls e
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
1 0 2
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
www.fairchildsemi.com
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
6
Mechanical Dimensions
Figure 16. TO92L, 3-Lead, 8 mm Long Body
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO92-H03
7
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©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
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®*
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™
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®
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®
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®
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FACT
FAST
®
®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
8
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©2001 Fairchild Semiconductor Corporation
FQNL2N50B Rev. C1
相关型号：
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