FQP15P12 [FAIRCHILD]
120V P-Channel MOSFET; 120V P沟道MOSFET
| 型号： | FQP15P12 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 120V P-Channel MOSFET |
| 文件： | 总10页 (文件大小：853K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
QFET
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
•
•
•
•
•
•
•
-15A, -120V, R
= 0.2Ω @V = -10 V
DS(on) GS
Low gate charge ( typical 29 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
S
!
●
G
●
▶
●
!
▲
TO-220
FQP Series
TO-220F
FQPF Series
G D
S
G
D S
!
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQP15P12
FQPF15P12
Units
V
I
Drain-Source Voltage
-120
V
A
DSS
- Continuous (T = 25°C)
Drain Current
-15
-10.6
-60
-15 *
-10.6 *
-60 *
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
1157
-15
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
10
mJ
V/ns
W
AR
dv/dt
-5.0
P
Power Dissipation (T = 25°C)
100
41
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.67
0.27
W/°C
°C
T , T
-55 to +175
300
J
STG
Maximum lead temperature for soldering purposes,
T
°C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP15P12
FQPF15P12
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.5
40
3.66
--
θJC
θJS
62.5
62.5
θJA
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
-120
--
Drain-Source Breakdown Voltage
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= -250 µA, Referenced to 25°C
-0.13
V/°C
D
/
I
∆T
J
V
V
V
V
= -120 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -96 V, T = 150°C
-10
DS
GS
GS
C
I
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-2.0
--
--
-4.0
0.2
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -7.5 A
0.17
9.5
D
g
= -40 V, I = -7.5 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
850
310
110
1100
400
140
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
15
100
80
40
210
170
170
38
ns
ns
d(on)
V
= -60 V, I = -15 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
80
ns
Q
Q
Q
29
nC
nC
nC
g
V
V
= -96 V, I = -15 A,
DS
D
5.1
15
--
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-15
-60
-4.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -15 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -15 A,
126
0.61
ns
µC
rr
GS
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, I = -15A, V = -50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ -15A, di/dt ≤ 300A/µs, V ≤ BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Typical Characteristics
102
101
100
102
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
101
100
10-1
o
175 C
Bottom : -4.5 V
o
25 C
o
-55 C
※
Notes :
※
Notes :
μ
1. VDS = -40V
1. 250 s Pulse Test
μ
2. 250 s Pulse Test
℃
2. TC = 25
-1
10
-1
10
100
101
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
10
VGS = -10V
℃
175
℃
25
0
10
VGS = -20V
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
μ
2. 250 s Pulse Test
J
-1
10
0
20
40
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-ID, Drain Current [A]
-VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
2200
2000
1800
1600
1400
1200
1000
800
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
Coss
C
VDS = -30V
VDS = -60V
C
C
iss
VDS = -96V
※
Notes ;
1. VGS = 0 V
2. f = 1 MHz
6
C
rss
4
600
400
2
200
※
Note : ID = -15A
0
10
0
-1
100
101
0
10
20
30
40
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
Notes :
0.9
0.8
1. VGS = 0 V
2. ID = -250
※
Notes :
μ
A
1. VGS = -10 V
2. ID = -7.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
Operation in This Area
is Limited by R DS(on)
2
10
102
is Limited by R DS(on)
100 µs
100 µs
1 ms
1 ms
10 ms
1
10
101
10 ms
DC
DC
0
10
100
※
※
Notes :
1. TC = 25 o
Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
C
2. T = 175 o
C
J
3. Single Pulse
3. Single Pulse
-1
-1
10
10
100
101
102
10
0
1
10
2
10
-VDS, Drain-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP15P12
Figure 9-2. Maximum Safe Operating Area
for FQPF15P12
20
15
10
5
0
25
50
75
100
125
150
175
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Typical Characteristics (Continued)
1 0 0
D = 0 .5
0 .2
0 .1
※
N o te s
:
℃
/W M a x.
1 . Z θ (t)
=
1 .5
J C
2 . D u ty F a c to r, D = t1/t2
3 . T JM
-
T C = P D M * Z θ (t)
J C
1 0 -1
0 .0 5
0 .0 2
0 .0 1
PDM
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP15P12
D =0.5
1 0 0
0.2
※
N otes
:
℃
/W M ax.
2. D uty F actor, D =t1 /t2
1. Z θ (t)
=
3.66
JC
0.1
3. T JM
-
T C
=
P D M * Z θ (t)
JC
0.05
0.02
0.01
1 0 -1
PDM
single pulse
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1, S q uare W ave P ulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Gate Charge Test Circuit & Waveform
VGS
Same Type
50Kꢀ
as DUT
Qg
12V
200nF
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
-10V
90%
VDS
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
DUT
-10V
IAS
t p
BVDSS
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Package Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Package Dimensions (Continued)
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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intended to be an exhaustive list of all such trademarks.
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MICROCOUPLER™ PowerTrench®
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GTO™
HiSeC™
I2C™
ImpliedDisconnect™ OCXPro™
ISOPLANAR™
MSX™
MSXPro™
OCX™
Quiet Series™
TINYOPTO™
TruTranslation™
UHC™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
RapidConfigure™
RapidConnect™
SILENT SWITCHER® UltraFET®
OPTOLOGIC®
OPTOPLANAR™
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POP™
SMART START™
SPM™
Stealth™
VCX™
Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I6
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