FS6S0765RCB [FAIRCHILD]

Fairchild Power Switch(FPS); 飞兆功率开关( FPS )
FS6S0765RCB
型号: FS6S0765RCB
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Fairchild Power Switch(FPS)
飞兆功率开关( FPS )

开关
文件: 总12页 (文件大小:592K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
www.fairchildsemi.com  
FS6S0765RCB  
Fairchild Power Switch(FPS)  
Features  
Description  
• Wide Operating Frequency Range up to 150KHz  
• Internal Burst Mode Controller for Stand-by Mode  
• Pulse by Pulse Over Current Limiting  
• Over Current Protection(Auto Restart Mode)  
• Over Voltage Protection (Auto Restart Mode)  
• Over Load Protection(Auto Restart Mode)  
• Internal Thermal Shutdown Function(Auto Restart Mode)  
• Under Voltage Lockout  
The Fairchild Power Switch(FPS) product family is specially  
designed for an off line SMPS with minimal external  
components. The Fairchild Power Switch(FPS) consist of  
high voltage power SenseFET and current mode PWM IC.  
Included PWM controller features integrated fixed oscillator,  
under voltage lock out, optimized gate turn on/turn off driver,  
thermal shutdown protection, over voltage protection, and  
temperature compensated precision current sources for loop  
compensation and fault protection circuitry. Compared to  
discrete MOSFET and controller or RCC switching converter  
solution, a Fairchild Power Switch(FPS) can reduce total  
component count, design size, and weight and at the same  
time increase efficiency, productivity and system reliability.  
It has a basic platform well suited for cost effective monitor  
power supply.  
• Internal High Voltage SenseFET  
Internal Sync Terminal/Soft Start  
TO-220-5L  
1
1. Drain 2. GND 3. V  
CC  
4. Feedback 5. Soft Start & Sync.  
Internal Block Diagram  
Drain  
Vcc  
3
1
Vref  
Vpp=5.8/7.2V  
SoftStart  
& Sync  
Internal  
Vref  
OSC  
Bias  
5
Vref  
UVLO  
Burst mode  
controller  
Vfb  
Vth=1V  
S
Ron  
Q
R
Vcc  
Vth=11V/12V  
Roff  
PWM  
Feedback  
4
2.5R  
R
Ifb  
Vfb Offset  
Vref  
Vcc  
Rsenese  
Idelay  
OCL  
Filter  
(130nsec)  
OLP  
GND  
2
Vth=1V  
Vth=7.5V  
TS  
D
S
R
Q
Vcc  
)
(Tj=160  
UVLO Reset  
(Vcc=9V)  
OVP  
Vth=30V  
Rev.1.0.0  
©2002 Fairchild Semiconductor Corporation  
FS6S0765RCB  
Absolute Maximum Ratings  
(Ta=25°C, unless otherwise specified)  
Parameter  
Drain-Source(GND) Voltage (1)  
Symbol  
Value  
650  
650  
±30  
28  
Unit  
V
V
DSS  
Drain-Gate Voltage (R =1M)  
V
DGR  
V
GS  
Gate-Source (GND) Voltage  
Drain Current Pulsed (2)  
V
V
GS  
DM  
I
A
DC  
Single Pulsed Avalanche Energy (3)  
Single Pulsed Avalanche Current (4)  
Continuous Drain Current (Tc = 25°C)  
E
I
570  
17  
mJ  
A
AS  
AS  
I
I
7
A
D
D
DC  
DC  
V
Continuous Drain Current (T =100°C)  
4.5  
A
C
Supply Voltage  
V
35  
CC  
V
0.3 to V  
V
FB  
CC  
Input Voltage Range  
V
0.3 to 10  
145  
V
S_S  
P (Watt H/S)  
D
W
W/°C  
°C  
Total Power Dissipation  
Darting  
1.163  
Operating Junction Temperature  
Operating Ambient Temperature  
Storage Temperature Range  
T
+150  
j
T
25 to +85  
55 to +150  
°C  
A
T
STG  
°C  
Note:  
1. T = 25°C to 150°C  
j
2. Repetitive rating: Pulse width limited by maximum junction temperature  
3. L = 14.5mH, starting T = 25°C  
j
4. L = 13uH, starting T = 25°C  
j
2
FS6S0765RCB  
Electrical Characteristics (SenseFET part)  
(Ta=25°C unless otherwise specified)  
Parameter  
Symbol  
BV  
Condition  
= 0V, I = 250µA  
Min. Typ. Max. Unit  
Drain-Source Breakdown Voltage  
V
V
650  
-
-
-
-
V
DSS  
GS  
DS  
D
= 650V, V  
= 0V  
200  
µA  
GS  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
= 520V  
= 0V, T = 125°C  
DS  
GS  
-
-
300  
µA  
C
Static Drain-Source on Resistance (1)  
Forward Transconductance (2)  
Input Capacitance  
R
V
V
= 10V, I = 1.8A  
D
-
-
-
-
-
-
-
-
-
1.3  
3.3  
1200  
125  
23  
1.6  
DS(ON)  
GS  
DS  
gfs  
= 50V, I = 1.8A  
D
-
-
-
-
-
-
-
-
S
Ciss  
V
= 0V, V = 25V,  
DS  
GS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn on Delay Time  
Rise Time  
Coss  
Crss  
pF  
nS  
f = 1MHz  
td(on)  
tr  
V
= 325V, I = 6.5A  
DD  
22  
D
(MOSFET switching  
time are essentially  
independent of  
70  
Turn Off Delay Time  
Fall Time  
td(off)  
tf  
105  
65  
operating temperature)  
Total Gate Charge  
(Gate-Source+Gate-Drain)  
V
V
= 10V, I = 6.5A,  
D
= 520V (MOSFET  
GS  
DS  
Qg  
-
40  
-
Switching time are  
Essentially independent of  
Operating temperature)  
nC  
Gate Source Charge  
Qgs  
Qgd  
-
-
6.5  
18  
-
-
Gate Drain (Miller) Charge  
Note:  
1. Pulse test : Pulse width 300µS, duty 2%  
1
R
2.  
S = ---  
3
FS6S0765RCB  
Electrical Characteristics (Continued)  
(Ta=25°C unless otherwise specified)  
Parameter  
Symbol  
Condition  
Min. Typ. Max. Unit  
UVLO SECTION  
Start Threshold Voltage  
Stop Threshold Voltage  
OSCILLATOR SECTION  
Initial Frequency  
V
V
V
= GND  
14  
8
15  
9
16  
10  
V
V
START  
FB  
FB  
V
= GND  
STOP  
F
-
22  
0
25  
1
28  
3
kHz  
%
OSC  
Voltage Stability  
F
12V Vcc 23V  
STABLE  
Temperature Stability (2)  
Maximum Duty Cycle  
Minimum Duty Cycle  
F  
-25°C Ta 85°C  
0
±5  
95  
-
±10  
98  
0
%
OSC  
MAX  
D
-
-
92  
-
%
D
%
MIN  
FEEDBACK SECTION  
Feedback Source Current  
Shutdown Feedback Voltage  
Shutdown Delay Current  
PROTECTION SECTION  
Over Voltage Protection  
Over Current Latch Voltage (1)  
Thermal Shutdown Temp.(2)  
I
V
= GND  
0.7  
6.9  
1.6  
0.9  
7.5  
2.0  
1.1 mA  
FB  
FB  
V
Vfb 6.9V  
8.1  
2.4  
V
SD  
Idelay  
V
V
= 5V  
µA  
FB  
V
V
27V  
27  
30  
33  
1.1  
-
V
V
OVP  
CC  
-
-
0.9  
1.0  
OCL  
T
140 160  
°C  
SD  
Note:  
1. These parameters, although guaranteed, are tested in EDS(wafer test) process.  
2. These parameters, although guaranteed at the design, are not tested in massing production  
4
FS6S0765RCB  
Electrical Characteristics (Continued)  
(Ta=25°C unless otherwise specified)  
Parameter  
Symbol  
Condition  
Min. Typ. Max. Unit  
SYNC & SOFTSTART SECTION  
Softstart Voltage  
V
Vfb = 2  
4.7  
0.8  
-
5.0  
1.0  
7.2  
5.8  
5.3  
V
SS  
Softstart Current  
I
Vss = V  
1.2 mA  
SS  
Sync High Threshold Voltage  
Sync Low Threshold Voltage  
BURST MODE SECTION  
Burst Mode Low Threshold Voltage  
Burst Mode High Threshold Voltage  
Burst Mode Enable Feedback Voltage(3)  
Burst Mode Peak Current Limit(2)  
Burst Mode Frequency  
V
Vcc = 16V, Vfb = 5V  
Vcc = 16V, Vfb = 5V  
-
-
V
V
SYNCH  
V
-
SYNCL  
V
Vfb = 0V  
10.4 11.0 11.6  
11.4 12.0 12.6  
V
V
V
V
BURL  
V
Vfb = 0V  
BURH  
V
BEN  
Vcc = 10.5V  
Vcc = 10.5V  
Vcc = 10.5V, Vfb = 0V  
0.7  
0.45 0.6 0.75  
40 50  
1.0  
1.3  
I
BU_PK  
F
60 KHz  
BUR  
CURRENT LIMIT(SELF-PROTECTION)SECTION  
Peak Current Limit(2)  
TOTAL DEVICE SECTION  
Start Up Current  
I
-
3.52 4.0 4.48  
A
OVER  
I
Vfb = GND, V  
Vfb = GND, V  
Vfb = GND, V  
Vfb = GND, V  
= 14V  
= 16V  
= 10V  
= 28V  
-
-
0.1 0.17 mA  
START  
CC  
CC  
CC  
CC  
I
OP  
OP(MIN)  
Operating Supply Current (1)  
I
10  
15  
mA  
I
OP(MAX)  
Note:  
1. These parameters are the current flowing in the Control IC.  
2. These parameters indicate Inductor Current.  
3. These parameters, although guaranteed at the design, are not tested in massing production.  
5
FS6S0765RCB  
Typical Performance Characteristics  
[mA]  
[mA]  
0.150  
11.0  
10.5  
10.0  
9.5  
0.125  
0.100  
0.075  
0.050  
9.0  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
Figure 2. Operating Current vs. Temp.  
Figure 1. Start Up Current vs. Temp.  
[V]  
[V]  
16.0  
10.0  
9.5  
9.0  
8.5  
8.0  
15.5  
15.0  
14.5  
14.0  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
vs. Temp.  
Figure 3. Start Threshold Voltage  
Figure 4. Stop Threshold Voltage vs. Temp.  
[KHz]  
[%]  
96.0  
95.5  
95.0  
94.5  
94.0  
28  
27  
26  
25  
24  
23  
22  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
vs. Temp.  
Figure 5. Initial Frequency  
vs. Temp.  
Figure 6. Maximum Duty  
6
FS6S0765RCB  
Typical Performance Characteristics (Continued)  
[mA]  
[V]  
1.1  
1.0  
0.9  
0.8  
0.7  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
Figure 7. Feedback Offset Voltage vs. Temp.  
Figure 8. Feedback Source Current vs. Temp.  
[V]
7.60  
[uA]  
2.4  
2.2  
2.0  
1.8  
1.6  
7.55  
7.50  
7.45  
7.40  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
Figure 9. Shutdown Delay Current vs. Temp.  
Figure 10. Shutdown Feedback Voltage vs. Temp.  
O
[V]  
[V]  
31.0  
30.5  
30.0  
29.5  
29.0  
5.02  
5.01  
5.00  
4.99  
4.98  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
Figure 11. Softstart Voltage vs. Temp.  
Figure 12. Over Voltage Protection vs. Temp.  
7
FS6S0765RCB  
Typical Performance Characteristics (Continued)  
[V]  
[V]  
12.2  
11.2  
11.1  
11.0  
10.9  
10.8  
12.1  
12.0  
11.9  
11.8  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
Figure 14. Burst Mode High Voltage vs. Temp.  
Figure 13. Burst Mode Low Voltage vs. Temp.  
[KHz]
[V]  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
54  
52  
50  
48  
46  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
Temp  
Temp  
Figure 16. Burst Mode Enable Voltage vs. Temp.  
Figure 15. Burst Mode Frequency vs. Temp.  
[A]  
[A]  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
0.45  
4.4  
4.2  
4.0  
3.8  
3.6  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100  
125  
150  
Temp  
Temp  
Figure 17. Burst Mode Peak Current vs. Temp.  
Figure 18. Peak Current Limit vs. Temp.  
8
FS6S0765RCB  
Package Dimensions  
TO-220-5L  
9
FS6S0765RCB  
Package Dimensions (Continued)  
TO-220-5L(Forming)  
10  
FS6S0765RCB  
Ordering Information  
Product Number  
Package  
Marking Code  
BVdss  
Rds(on)  
1.3  
FS6S0765RCB-TU  
TO-220-5L  
6S0765RC  
B
650V  
FS6S0765RCB-YDTU  
TO-220-5L(Forming)  
TU : Non Forming Type  
YDTU : Forming Type  
11  
FS6S0765RCB  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER  
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with  
instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the  
user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
3/20/02 0.0m 001  
Stock#DSxxxxxxxx  
2002 Fairchild Semiconductor Corporation  

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