FS6S0965RCB-TU [FAIRCHILD]
32.4 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PSFM5, TO-220, 5 PIN;型号: | FS6S0965RCB-TU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 32.4 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PSFM5, TO-220, 5 PIN 局域网 开关 |
文件: | 总10页 (文件大小:569K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
www.fairchildsemi.com
FS6S0965RCB
Fairchild Power Switch(FPS)
Features
Description
• Wide Operating Frequency Range Up to 150Khz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start up Current (Max:170uA)
• Low Operating Current (Max:15mA)
• Internal High Voltage SenseFET
The Fairchild Power Switch(FPS) product family are
specially designed for an off line SMPS with minimal
external components. The Fairchild Power Switch(FPS)
consists of a high voltage power SenseFET and a current
mode PWM IC. Included PWM controller features the
integrated fixed oscillator, the under voltage lockout, the
optimized gate turn on/turn off driver, the thermal shut
down protection, the over voltage protection, and the
temperature compensated precision current sources for the
loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a controller or a RCC
switching converter solution, a Fairchild Power Switch(FPS)
can reduce the total component count, design size, and
weight and at the same time increase efficiency,
• Built-in Auto Restart Circuit
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection (Auto Restart Mode)
• Over Current Protection (Auto Restart Mode)
• Internal Thermal Protection(Auto Restart Mode)
• Pulse By Pulse Over Current Limiting
• Internal Burst Mode Controller for Stand-by Mode
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
productivity, and system reliability. It has a basic platform
well suited for the cost effective monitor power supply.
TO-220-5L
Application
• Monitor SMPS
1
1. Drain 2. Gnd 3. V
4. Feedback 5. Sync
CC
Internal Block Diagram
Drain
Vc c
3
1
Vref
Vpp=5.8/7.2V
Internal
Vref
OSC
Bias
SoftStart
& Sync
5
Vref
UVLO
Burst mode
controller
Vfb
Vth=1V
S
Ron
Q
R
Vcc
Vth=11V/12V
Roff
PWM
4
Feedback
2.5R
R
Ifb
Vfb Offset
Vref
Vcc
Rsenese
Idelay
OCL
Filter
(130nsec)
OLP
GND
2
Vth=1V
Vth=7.5V
S
R
Q
TSD
(Tj=160
Vcc
)
℃
UVLO Reset
(Vcc=9V)
OVP
Vth=30V
Rev.1.0.0
©2002 Fairchild Semiconductor Corporation
FS6S0965RCB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source(GND) Voltage (1)
Symbol
Value
650
Unit
V
V
DSS
Drain-Gate Voltage (R =1MΩ)
V
DGR
650
V
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (2)
Single Pulsed Avalanche Energy (3)
Single Pulsed Avalanche Current (4)
Continuous Drain Current (Tc = 25°C)
V
±30
V
GS
DM
I
32.4
515
A
DC
E
I
mJ
A
AS
25
AS
I
I
8.1
A
D
D
DC
DC
V
Continuous Drain Current (T =100°C)
5.1
A
C
Supply Voltage
V
35
CC
V
−0.3 to V
V
FB
CC
Input Voltage Range
V
−0.3 to 10
155
V
S_S
P (Watt H/S)
D
W
W/°C
°C
Total Power Dissipation
Derating
1.243
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
T
+150
j
T
−25 to +85
−55 to +150
°C
A
T
STG
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=14.5mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
2
FS6S0965RCB
Electrical Characteristics (SenseFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
Condition
=0V, I =250µA
Min.
650
-
Typ. Max. Unit
Drain Source Breakdown Voltage
V
V
-
-
-
V
DSS
GS
DS
D
=650V, V =0V
GS
200
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=520V
DS
-
-
300
µA
=0V, T =125°C
GS
C
Static Drain-Source On Resistance (1)
Forward Transconductance (2)
Input Capacitance
R
V
V
=10V, I =1.8A
D
-
-
-
-
-
-
-
-
-
1.0
-
1.2
Ω
DS(ON)
GS
DS
gfs
=50V, I =1.8A
D
-
-
-
-
-
-
-
-
S
Ciss
1300
135
25
V
=0V, V =25V,
GS DS
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Coss
Crss
pF
nS
f = 1MHz
td(on)
tr
V
=325V, I =6.5A
DD
25
D
(MOSFET switching
time is essentially
independent of
75
Turn Off Delay Time
Fall Time
td(off)
tf
130
70
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =6.5A,
D
=520V (MOSFET
GS
DS
Qg
-
45
60
switching time is essentially
independent of
operating temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
8
-
-
Gate-Drain (Miller) Charge
21
Notes:
1.Pulse test : Pulse width ≤ 300µS, duty 2%
1
2. S = ---
R
3
FS6S0965RCB
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Frequency
V
V
V
=GND
14
8
15
9
16
10
V
V
START
FB
FB
V
=GND
STOP
F
-
22
0
25
1
28
3
kHz
%
OSC
Voltage Stability
F
12V ≤ Vcc ≤ 23V
STABLE
Temperature Stability (4)
Maximum Duty Cycle
∆F
-25°C ≤ Ta ≤ 85°C
0
±5
95
-
±10
98
0
%
OSC
MAX
D
-
-
92
-
%
Minimum Duty Cycle
D
%
MIN
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SYNC & SOFTSTART SECTION
Softstart Vortage
I
V
=GND
0.7
6.9
1.6
0.9
7.5
2.0
1.1 mA
FB
FB
Vfb ≥ 6.9V
=5V
V
8.1
2.4
V
SD
Idelay
V
µA
FB
V
Vfb=2
4.7
0.8
-
5.0
1.0
7.2
5.8
5.3
V
SS
Softstart Current
I
Vss=V
1.2 mA
SS
Sync High Threshold Voltage
Sync Low Threshold Voltage
BURST MODE SECTION
Burst Mode Low Threshold Voltage
Burst Mode High Threshold Voltage
Burst Mode Enable Feedback Voltage(4)
Burst Mode Peak Current Limit(3)
Burst Mode Frequency
V
Vcc=16V,Vfb=5V
Vcc=16V,Vfb=5V
-
-
V
V
SYNCH
V
-
SYNCL
V
Vfb=0V
10.4 11.0 11.6
11.4 12.0 12.6
V
V
V
V
BURL
V
Vfb=0V
BURH
V
Vcc=10.5V
Vcc=10.5V
Vcc=10.5V, Vfb=0V
0.7
0.45 0.6 0.75
40 50
1.0
1.3
BEN
I
BU_PK
F
60 KHz
BUR
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit(3)
I
-
5.28 6.0 6.72
A
OVER
PROTECTION SECTION
Over Voltage Protection
Over Current Latch Voltage (2)
Thermal Shutdown Temperature(4)
TOTAL DEVICE SECTION
Start Up current
V
V
Vcc≥ 27V
27
30
33
1.1
-
V
V
OVP
-
-
0.9
1.0
OCL
T
140 160
°C
SD
I
Vfb=GND, V =14V
CC
-
-
0.1 0.17 mA
START
I
Vfb=GND, V =16V
CC
OP
OP(MIN)
Operating Supply Current (1)
I
Vfb=GND, V =10V
CC
10
15
mA
I
Vfb=GND, V =28V
CC
OP(MAX)
Note:
(1) These parameters are the current flowing in the control IC.
(2) These parameters, although guaranteed, are tested in the EDS(wafer test) process.
(3) These parameters indicate the inductor current.
(4) These parameters, although guranteed at the design, are not tested in the mass production
4
FS6S0965RCB
Typical Performance Characteristics
[mA]
[mA]
0.150
11.0
10.5
10.0
9.5
0.125
0.100
0.075
0.050
9.0
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 1. Start Up Current vs. Temp.
Figure 2. Operating Current vs. Temp.
[%]
[V]
96.0
95.5
95.0
94.5
94.0
16.0
15.5
15.0
14.5
14.0
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 3. Start Threshold Voltage vs. Temp.
Figure 4. Stop Threshold Voltage vs. Temp.
[KHz]
[%]
28
27
26
25
24
23
22
96.0
95.5
95.0
94.5
94.0
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 5. Initial Frequency vs. Temp.
Figure 6. Maximum Duty vs. Temp.
5
FS6S0965RCB
Typical Performance Characteristics (Continued)
[mA]
[V]
0.45
1.1
1.0
0.9
0.8
0.7
0.40
0.35
0.30
0.25
0.20
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 7. Feedback Offset Voltage vs. Temp.
Figure 8. Feedback Source Current vs. Temp.
[V]
7.60
[uA]
2.4
2.2
2.0
1.8
1.6
7.55
7.50
7.45
7.40
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 9. Shutdown Delay Current vs. Temp.
Figure 10. Shutdown Feedback Voltage vs. Temp.
[V]
[V]
31.0
30.5
30.0
29.5
29.0
5.02
5.01
5.00
4.99
4.98
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 11. Softstart Voltage vs. Temp.
Figure 12. Over Voltage Protection vs. Temp.
6
FS6S0965RCB
Typical Performance Characteristics (Continued)
[V]
[V]
12.2
11.2
11.1
11.0
10.9
10.8
12.1
12.0
11.9
11.8
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 14. Burst Mode High Voltage vs. Temp.
Figure 13. Burst Mode Low Voltage vs. Temp.
[KHz]
[V]
54
1.3
1.2
1.1
1.0
0.9
0.8
0.7
52
50
48
46
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
Temp
Temp
Figure 16. Burst Mode Enable Voltage vs. Temp.
Figure 15. Burst Mode Frequency vs. Temp.
[A]
[A]
6.2
6.1
6.0
5.9
5.8
0.70
0.65
0.60
0.55
0.50
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 17. Burst Mode Peak Current vs. Temp.
Figure 18. Over Current Limit vs. Temp.
7
FS6S0965RCB
Package Dimensions
TO-220-5L
8
FS6S0965RCB
Package Dimensions (Continued)
TO-220-5L(Forming)
9
FS6S0965RCB
Ordering Information
Product Number
Package
Marking Code
BVdss
Rds(on)
FS6S0965RCB-TU
TO-220-5L
6S0965RC
B
650V
1.0
FS6S0965RCB-YDTU
TO-220-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
5/14/02 0.0m 001
Stock#DSxxxxxxxx
2002 Fairchild Semiconductor Corporation
相关型号:
FS6S0965RCB-YDTU
32.4 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PZFM5, TO-220, 5 PIN
FAIRCHILD
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