FS6S0965RT [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关( FPS )型号: | FS6S0965RT |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Fairchild Power Switch(FPS) |
文件: | 总13页 (文件大小:220K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
www.fairchildsemi.com
FS6S-SERIES
FS6S0965RT/FS6S1265RB
Fairchild Power Switch(FPS)
Features
Description
• Wide Operating Frequency Range Up to 150Khz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start up Current (max:170uA)
• Low Operating Current (max:15mA)
• Internal High Voltage SenseFET
The Fairchild Power Switch(FPS) product family are
specially designed for an off line SMPS with minimal
external components. The Fairchild Power Switch(FPS)
consists of a high voltage power SenseFET and a current
mode PWM IC. Included PWM controller features the
integrated fixed oscillator, the under voltage lockout, the
optimized gate turn on/turn off driver, the thermal shut
down protection, the over voltage protection, and the
temperature compensated precision current sources for the
loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a controller or a RCC
switching converter solution, a Fairchild Power Switch(FPS)
can reduce the total component count, design size, and
weight and at the same time increase efficiency,
• Built-in Auto Restart Circuit
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection (Auto Restart Mode)
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
• Internal Burst Mode Controller for Stand-by Mode
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
productivity, and system reliability. It has a basic platform
well suited for the cost effective monitor power supply.
Application
TO-220F-5L
TO-3P-5L
• Monitor SMPS
1
1
1. Drain 2. Gnd 3. V
4. FeedBack 5. Sync.
CC
Internal Block Diagram
Drain
Vcc
3
1
Vref
Vpp=5.8/7.2V
SoftStart
& Sync
Internal
Bias
OSC
Vref
5
Vref
UVLO
Burst mode
controller
Vfb
Vth=1V
S
Ron
Q
R
Vcc
Vth=11V/12V
Roff
Feedback
PWM
4
2.5R
R
Ifb
Vfb Offset
Vref
Vcc
Rsenese
Idelay
OCL
Filter
(130nsec)
OLP
GND
2
Vth=1V
Vth=7.5V
TS
S
R
Q
D
Vcc
)
(Tj=160℃
UVLO Reset
(Vcc=9V)
OVP
Vth=30V
Rev.1.0.6
©2002 Fairchild Semiconductor Corporation
FS6S-SERIES FS6S0965RT/FS6S1265RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
FS6S0965RT
Maximum Drain Voltage
V
650
650
±30
36
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanche Current(Energy (2)
Maximum Supply Voltage
I
I
9
D
D
7.2
)
I
(E
)
25(950)
35
AS AS
V
CC,MAX
V
V
-0.3 to V
V
FB
CC
Input Voltage Range
-0.3 to 10
48
V
SS
PD (Watt H/S)
Darting
W
Total Power Dissipation
0.385
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
STG
°C
FS6S1265RB
Maximum Drain Voltage
V
650
650
±30
48
V
V
D,MAX
Drain-Gate Voltage(R =1MΩ)
V
DGR
GS
Gate-Source(GND) Voltage
Drain Current Pulsed(1)
V
V
GS
DM
I
ADC
ADC
ADC
A(mJ)
V
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanche Current(Energy (2)
Maximum Supply Voltage
I
I
12
D
D
8.4
)
I
(E
)
30(950)
35
AS AS
V
CC,MAX
V
V
-0.3 to V
V
FB
SS
CC
Input Voltage Range
-0.3 to 10
240
V
PD (Watt H/S)
Darting
W
Total Power Dissipation
1.92
W / °C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
-55 to +150
°C
A
T
STG
°C
2
FS6S-SERIES FS6S0965RT/FS6S1265RB
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
FS6S0965RT
Drain Source Breakdown Voltage
BV
V
V
= 0V, I = 50µA
650
-
-
-
-
V
DSS
GS
DS
D
=Max., Rating, V =0V
GS
200
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
= 0.8Max., Rating,
DS
-
-
300
µA
= 0V, T = 125°C
GS
C
Static Drain-Source On Resistance (1)
Forward Transconductance(1)
Input Capacitance
R
V
= 10V, I = 4.5A
D
-
-
-
-
-
-
-
-
-
1.1
-
1.2
Ω
DS(on)
GS
gfs
VDS = 50V, ID = 4.5A
-
-
-
-
-
-
-
-
S
Ciss
1300
135
25
VGS = 0V, VDS = 25V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Coss
Crss
pF
nS
t
VDD = 0.5BVDSS, ID = 9.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
25
d(on)
tr
75
Turn Off Delay Time
Fall Time
t
130
70
d(off)
tf
Total Gate Charge
(Gate-Source+Gate-Drain)
VGS = 10V, ID = 9.0A,
VDS = 0.5BVDSS(MOSFET
switching time is
essentially independent of
operating temperature)
Qg
-
45
-
Gate-Source Charge
Qgs
Qgd
-
-
8
-
-
nC
Gate-Drain (Miller) Charge
22
FS6S1265RB
Drain-Source Breakdown Voltage
BV
V
V
= 0V, I = 50µA
650
-
-
-
-
V
DSS
GS
DS
D
=Max, Rating, V
= 0V
200
µA
GS
Zero Gate Voltage Drain Current
I
DSS
V
V
= 0.8Max, Rating,
DS
GS
-
-
300
µA
= 0V, T = 125°C
C
Static Drain-Source on Resistance (1)
Forward Transconductance(1)
Input Capacitance
R
V
= 10V, I = 4.5A
D
-
-
-
-
-
-
-
-
-
0.7
-
0.9
Ω
DS(on)
GS
gfs
VDS = 50V, ID = 4.5A
-
-
-
-
-
-
-
-
S
Ciss
1820
185
32
VGS = 0V, VDS = 25V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Coss
Crss
pF
nS
t
VDD = 0.5BVDSS, ID = 12.0A
(MOSFET switching
time are essentially
independent of
38
d(on)
tr
120
200
100
Turn Off Delay Time
Fall Time
t
d(off)
tf
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
VGS = 10V, ID = 12.0A,
VDS = 0.5BVDSS(MOSFET
switching time are
essentially independent of
operating temperature)
Qg
-
60
-
nC
Gate-Source Charge
Qgs
Qgd
-
-
10
30
-
-
Gate-Drain (Miller) Charge
3
FS6S-SERIES FS6S0965RT/FS6S1265RB
Electrical Characteristics (Continued)
(V =16V, Tamb = 25°C unless otherwise specified)
CC
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Frequency
V
V
V
=GND
14
8
15
9
16
10
V
V
START
FB
FB
V
=GND
STOP
F
-
22
0
25
1
28
3
kHz
%
OSC
Voltage Stability
F
12V ≤ V
≤ 23V
CC
STABLE
Temperature Stability (Note2)
Maximum Duty Cycle
∆F
-25°C ≤ Τa ≤ 85°C
0
±5
95
-
±10
98
0
%
OSC
MAX
D
-
-
92
-
%
Minimum Duty Cycle
D
MIN
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SYNC. & SOFTSTART SECTION
Softstart Voltage
I
V
V
V
=GND
≥ 6.9V
=5V
0.7
6.9
1.6
0.9
7.5
2.0
1.1
8.1
2.4
mA
V
FB
FB
FB
FB
V
SD
I
µA
DELAY
V
V
V
V
V
=2V
=0V
4.7
0.8
-
5.0
1.0
7.2
5.8
5.3
1.2
-
V
mA
V
SS
FB
SS
CC
CC
Softstart Current
I
SS
Sync High Threshold Voltage(Note3)
Sync Low Threshold Voltage(Note3)
BURST MODE SECTION
Burst Mode Low Threshold Voltage
Burst Mode High Threshold Voltage
Burst Mode Enable Feedback Voltage
Burst Mode Peak Current Limit(Note4)
Burst Mode Frequency
V
=16V , V =5V
FB
SYNCH
V
=16V , V =5V
FB
-
-
V
SYNCL
V
V
V
V
V
V
=0V
=0V
10.4 11.0 11.6
11.4 12.0 12.6
V
V
BURL
FB
FB
CC
CC
CC
V
BURH
V
=10.5V
0.7
0.6
40
1.0
0.85
50
1.3
1.1
60
V
BEN
I
=10.5V , V =0V
A
BURPK
FB
F
=10.5V , V =0V
kHz
BUR
FB
CURRENT LIMIT(SELF-PROTECTION)SECTION
FS6S0965RT
FS6S1265RB
5.28
7.04
6.0
8.0
6.72
8.96
Peak Current Limit (Note4)
IOVER
A
PROTECTION SECTION
Over Voltage Protection
V
V
V
≥ 27V
27
30
33
V
V
OVP
CC
Over Current Latch voltage(Note3)
-
-
0.9
1.0
1.1
OCL
Thermal Shutdown Temperature
(Note2)
T
140
160
-
°C
SD
TOTAL DEVICE SECTION
Start-Up Current
I
V
V
V
V
= GND, V
= GND, V
= GND, V
= GND, V
= 14V
= 16V
= 12V
= 30V
-
-
0.1
10
0.17
15
mA
mA
START
FB
FB
FB
FB
CC
CC
CC
CC
I
OP
I
OP(MIN)
Operating Supply Current(Note1)
I
OP(MAX)
Notes:
1. These parameters are the Current Flowing in the Control IC.
2. These parameters, although guaranteed, are not 100% tested in production
3. These parameters, although guaranteed, are tested in EDS(wafer test) process
4. These parameters are indicated Inductor Current.
4
FS6S-SERIES FS6S0965RT/FS6S1265RB
Typical Performance Characteristics
[mA]
Istart
[mA]
Iop
0.15
0.12
0.09
0.06
0.03
0.00
10.2
10.0
9.8
9.6
9.4
9.2
9.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 1. Start Up Current vs. Temp.
Figure 2. Operating Supply Current vs. Temp.
[V]
Vstop
[V]
Vstart
9.10
9.06
9.02
8.98
8.94
8.90
16.0
15.6
15.2
14.8
14.4
14.0
13.6
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 4. Stop Threshold Voltage vs. Temp.
Figure 3. Start Threshold Voltage vs. Temp.
[%]
Dmax
[kHz]
Fosc
96.0
95.6
95.2
94.8
94.4
94.0
26.0
25.2
24.4
23.6
22.8
22.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 5. Initial Frequency vs. Temp.
Figure 6. Maximum Duty vs. Temp.
5
FS6S-SERIES FS6S0965RT/FS6S1265RB
Typical Performance Characteristics (Continued)
[mA]
Ifb
[V]
Voff
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.50
0.40
0.30
0.20
0.10
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 7. Feedback Offset Voltage vs. Temp.
Figure 8. Feedback Source Current vs. Temp.
[V]
Vsd
[uA]
Idelay
7.60
7.56
7.52
7.48
7.44
7.40
2.10
2.02
1.94
1.86
1.78
1.70
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 9. Shutdown Delay Current vs. Temp.
Figure 10. Shutdown Feedback Voltage vs. Temp.
[V]
Vss
[V]
Vovp
5.10
5.06
5.02
4.98
4.94
4.90
31.0
30.6
30.2
29.8
29.4
29.0
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 11. Softstart Voltage vs. Temp.
Figure 12. Over Voltage Protection vs. Temp.
6
FS6S-SERIES FS6S0965RT/FS6S1265RB
Typical Performance Characteristics (Continued)
[V]
Vburh
[V]
Vburl
12.3
12.2
12.1
12.0
11.9
11.8
11.7
11.2
11.1
11.0
10.9
10.8
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 13. Burst Mode Low Voltage vs. Temp.
Figure 14. Burst Mode High Voltage vs. Temp.
[kHz]
Fbur
[V]
Vben
53.0
51.0
49.0
47.0
45.0
43.0
1.60
1.20
0.80
0.40
0.00
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 15. Burst Mode Frequency vs. Temp.
Figure 16. Burst Mode Enable Voltage vs. Temp.
[A]
Ibur_pk
[A]
Iover
0.98
0.95
0.92
0.89
0.86
0.83
6.20
6.10
6.00
5.90
5.80
5.70
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Temp
Temp
Figure 17. Burst Mode Peak Current vs. Temp.
Figure 18. Peak Current Limit vs. Temp.
7
FS6S-SERIES FS6S0965RT/FS6S1265RB
Package Dimensions
TO-3P-5L
8
FS6S-SERIES FS6S0965RT/FS6S1265RB
Package Dimensions (Continued)
TO-3P-5L(Forming)
9
FS6S-SERIES FS6S0965RT/FS6S1265RB
Package Dimensions (Continued)
TO-220F-5L
10
FS6S-SERIES FS6S0965RT/FS6S1265RB
Package Dimensions (Continued)
TO-220F-5L(Forming)
11
FS6S-SERIES FS6S0965RT/FS6S1265RB
TOP Mark and Pinout Information
SXXYY
F
MARKING
Pin No.
Symbol
Drain
Description
SenseFET Drain
1
2
3
4
5
GND
Ground (Source)
V
Control Part Supply Input
PWM Non Inverting Input
Soft start & External Sync.
CC
F/B
S/S
1
Device
Marking
FS6S0965RT
FS6S1265RB
6S0965R
6S1265RB
Notes:
(1) F : Fairchild Semiconductor
(2) 6S1265RB : Device Marking Name
(3) S : Plant Code (FPS: S)
(4) XX : Patweek Based on Fairchild Semiconductor Work Month Calender
(5) YY : Last Two Digit of Calender Year
12
FS6S-SERIES FS6S0965RT/FS6S1265RB
Ordering Information
Product Number
FS6S0965RT-TU
Package
Marking Code
BVdss
Rds(on)
TO-220F-5L
6S0965R
650V
1.1Ω
FS6S0965RT-YDTU
TO-220F-5L(Forming)
FS6S1265RB-TU
TO-3P-5L
6S1265RB
650V
0.7Ω
FS6S1265RB-YDTU
TO-3P-5L(Forming)
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
4/19/02 0.0m 001
Stock#DSxxxxxxxx
2002 Fairchild Semiconductor Corporation
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