FSB749_NL [FAIRCHILD]

Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SUPERSOT-3;


型号：	FSB749_NL
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SUPERSOT-3
文件：	总3页 (文件大小：29K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSB749

SuperSOT^TM-3

PNP Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous. Sourced from Process PC.

Absolute Maximum Ratings*

T_{A = 25°C unless otherwise noted}

FSB749

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_{A = 25°C unless otherwise noted}

Max

Characteristic

Symbol

Units

FSB749

Total Device Dissipation

500

P_D

Thermal Resistance, Junction to Ambient

250

°C/W

R_qJA

1999 Fairchild Semiconductor Corporation

fsb749.lwpPrPC revA

PNP Low Saturation Transistor

(continued)

Electrical Characteristics

T_{A = 25°C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

BV_CEO

BV_CBO

BV_EBO

I_CBO

I_C= 10 mA

I_C= 100 mA

I_E= 100 mA

V_CB= 30 V

100

V_CB= 30 V, T_A=100°C

Emitter Cutoff Current

100

I_EBO

V_EB= 4V

ON CHARACTERISTICS*

DC Current Gain

h_FE

100

I_C= 50 mA, V_CE= 2 V

I_C= 1 A, V_CE= 2 V

I_C= 2 A, V_CE= 2 V

I_C= 6 A, V_CE= 2 V

300

Collector-Emitter Saturation Voltage

300

600

V_CE(sat)

I_C= 1 A, I_B= 100 mA

I_C= 3 A, I_B= 300 mA

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

1.25

V_BE(sat)

V_BE(on)

I_C= 1 A, I_B= 100 mA

I_C= 1 A, V_CE= 2 V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C_obo

100

V_CB= 10 V, I_E= 0, f = 1MHz

Transition Frequency

f_T

100

I_C= 100 mA,V_CE= 5 V, f=100MHz

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

1999 Fairchild Semiconductor Corporation

fsb749.lwpPrPC revA

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench

QFET™

STAR*POWER™

Stealth™

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QS™

EcoSPARK™

E²CMOS^TM

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART START™

EnSigna^TM

UltraFET

VCX™

FACT™

FACT Quiet Series™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H3

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