FSD210DH_技术文档

September 2008

FSQ510, FSQ510H, and FSQ510M

Green Mode Fairchild Power Switch (FPS™)

for Valley Switching Converter – Low EMI and High Efficiency

Features

Description

A Valley Switching Converter (VSC) generally shows

lower EMI and higher power conversion efficiency than

a conventional hard-switched converter with a fixed

switching frequency. The FSQ510 (H or M) is an

integrated valley switching pulse width modulation (VS-

PWM) controller and SenseFET specifically designed

for offline switch-mode power supplies (SMPS) for

valley switching with minimal external components. The

VS-PWM controller includes an integrated oscillator,

under-voltage lockout (UVLO), leading-edge blanking

(LEB), optimized gate driver, internal soft-start,

temperature-compensated precise current sources for

loop compensation, and self-protection circuitry.

Uses an LDMOS Integrated Power Switch

Optimized for Valley Switching Converter (VSC)

Low EMI through Variable Frequency Control and

Inherent Frequency Modulation

High Efficiency through Minimum Drain Voltage

Switching

Extended Valley Switching for Wide Load Ranges

Small Frequency Variation for Wide Load Ranges

Advanced Burst-Mode Operation for Low Standby

Power Consumption

Compared with discrete MOSFET and PWM controller

solutions, the FSQ510 (H or M) can reduce total cost,

component count, size and weight; while simultaneously

increasing efficiency, productivity, and system reliability.

This device provides a platform for cost-effective designs

of a valley switching flyback converters.

Pulse-by-Pulse Current Limit

Protection Functions: Overload Protection (OLP),

Internal Thermal Shutdown (TSD) with Hysteresis

Under-Voltage Lockout (UVLO) with Hysteresis

Internal Startup Circuit

Internal High-Voltage SenseFET: 700V

Built-in Soft-Start: 5ms

Applications

Auxiliary Power Supplies for LCD TV, LCD Monitor,

Personal Computer, and White Goods

Ordering Information

Output Power Table ⁽¹⁾

Replaces

Operating

Junction

230V_AC± 15%⁽²⁾

85-265V_AC

Part

Number

Current R_DS(ON)

Limit (MAX)

Package

Eco

Status

Devices

Open

Adapter⁽³⁾

Open

Adapter⁽³⁾

Temperature

Frame⁽⁴⁾

FSQ510

7-DIP

FSD210B

FSD210DH

FSD210BM

FSQ510H 8-DIP

RoHS

320mA

5.5W

9W

4W

6W

-40 to +130°C

32Ω

FSQ510M 7-MLSOP

For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

Notes:

1. The junction temperature can limit the maximum output power.

2. 230V_ACor 100/115V_ACwith voltage doubler.

3. Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a non-

ventilated, enclosed adapter housing, measured at 50°C ambient temperature.

4. Maximum practical continuous power for auxiliary power supplies in an open-frame design at 50°C ambient temperature.

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

Application Circuit

Vo

AC

IN

V_str

D

VS

-PWM

Sync

GND

V_fb

V_cc

Figure 1. Typical Application Circuit

Internal Block Diagram

Sync

4 (3)

V_CC

V_str

D

5 (7)

8 (1)

7 (8)

200ns

delay

UVLO

V_REF

0.7V / 0.1V

8.7V / 6.7V

V_REF

Idelay

IFB

OSC

3

(2)

V_fb

S

R

Q

6R

R

360ns

LEB

R

sense

(0.4V)

0.85V / 0.75V

S/S

5ms

OLP

4.7V

S

R

TSD

Q

A/R

n(m):n stands for the pin number of 7-DIP and 7-MLSOP

m stands for the pin number of 8-DIP

1,2

(4,5,6)

GND

Figure 2. Internal Block Diagram

FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

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2

Pin Assignments

V_str

V_fb

D

V_cc

FSQ510H

Sync

GND

Figure 3. Package Diagrams for FSQ510(M) and FSQ510H

Pin Definitions

7-Pin

8-Pin

Name

Description

1, 2

4, 5, 6

GND

This pin is the control ground and the SenseFET source.

This pin is internally connected to the inverting input of the PWM

comparator. The collector of an opto-coupler is typically tied to this

pin. For stable operation, a capacitor should be placed between this

pin and GND. If the voltage of this pin reaches 4.7V, the overload

protection triggers, which shuts down the FPS.

3

4

2

3

V_fb

This pin is internally connected to the sync-detect comparator for

valley switching. In normal valley-switching operation, the threshold of

the sync comparator is 0.7V/0.1V.

Sync

This pin is the positive supply input. This pin provides internal

operating current for both startup and steady-state operation.

5

7

8

V_CC

D

High-voltage power SenseFET drain connection.

This pin is connected directly, or through a resistor, to the high-

voltage DC link. At startup, the internal high-voltage current source

supplies internal bias and charges the external capacitor connected

to the V_CCpin. Once V_CCreaches 8.7V, the internal current source is

disabled.

8

1

V_str

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

3

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device

reliability. The absolute maximum ratings are stress ratings only.

Symbol

V_STR

V_DS

Parameter

Min.

Max.

500

700

20

Unit

V

V_strPin Voltage

Drain Pin Voltage

Supply Voltage

V

V_CC

V

V_FB

Feedback Voltage Range

Sync Pin Voltage

-0.3

6.5

V

V_Sync

6.5

V

7-DIP

1.38

P_D

Total Power Dissipation

W

7-MLSOP

8-DIP

1.47

Maximum Junction Temperature

+150

T_J

°C

Recommended Operating Junction

Temperature⁽⁵⁾

-40

-55

+140

+150

T_STG

Storage Temperature

Notes:

5. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

Thermal Impedance

T_A=25°C unless otherwise specified. Items are tested with the standards JESD 51-2 and 51-10 (DIP).

Symbol

7-DIP, 7-MLSOP

θ_JA

Parameter

Value

Unit

Junction-to-Ambient Thermal Impedance⁽⁶⁾

Junction-to-Case Thermal Impedance⁽⁷⁾

90

13

°C/W

θ_JC

8-DIP

θ_JA

Junction-to-Ambient Thermal Impedance⁽⁶⁾

Junction-to-Case Thermal Impedance⁽⁷⁾

85

13

°C/W

θ_JC

Notes:

6. Free-standing with no heatsink; without copper clad; measurement condition - just before junction temperature

T_Jenters into TSD.

7. Measured on the DRAIN pin close to plastic interface.

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

4

Electrical Characteristics

T_J=25°C unless otherwise specified.

Symbol

Parameter

Conditions

Min. Typ.

Max. Unit

SenseFET Section

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

700

V

V_CC=0V, I_D=100μA

V_DS=700V

Zero-Gate-Voltage Drain Current

150

32

μA

28

42

T_J=25°C, I_D=180mA

T_J=100°C, I_D=180mA

V_GS=11V

R_DS(ON)

Drain-Source On-State Resistance

48

Input Capacitance⁽⁸⁾

Output Capacitance⁽⁸⁾

Rise Time⁽⁸⁾

C_ISS

C_OSS

t_r

96

pF

ns

V_DS=40V

28

V_DS=350V, I_D=25mA

V_DS=350V, l_D=25mA

100

50

Fall Time⁽⁸⁾

t_f

Control Section

Initial Switching Frequency

Switching Frequency Variation⁽⁸⁾

V_CC=11V, V_FB=0.5V, V_sync=0V

-25°C < T_J< 125°C

f_S

87.7

94.3

±5

100.0

±8

kHz

%

Δf_S

I_FB

Feedback Source Current

V_CC=11V, V_FB=0V

200

7.2

225

250

μA

V_CC=11V, V_FB=1V,

t_B

Switching Blanking Time

7.6

8.2

μs

V_syncFrequency Sweep

Valley Detection Window Time⁽⁸⁾

Maximum Duty Ratio

t_W

3.0

60

μs

%

V

V_CC=11V, V_FB=3V

D_MAX

D_MIN

V_START

V_STOP

t_S/S

54

66

0

Minimum Duty Ratio

V_CC=11V, V_FB=0V

V_FB=0V, V_CCSweep

After Turn-on, V_FB=0V

V_STR=40V, V_CCSweep

8.0

6.0

3

8.7

6.7

5

9.4

7.4

7

UVLO Threshold Voltage

V

Internal Soft-Start Time

ms

Burst-Mode Section

V_BURH

0.75

0.65

0.85

0.75

100

0.95

0.85

V

Burst-Mode Voltage

V_CC=11V, V_FBSweep

V_BURL

HYS

mV

Protection Section

Peak Current Limit

di/dt=90mA/µs

I_LIM

280

4.2

320

4.7

360

5.2

mA

V

V_DS=40V, V_CC=11V,

_FBSweep

V_SD

Shutdown Feedback Voltage

V

FSQ510H

4

5

6

Shutdown Delay

Current

I_DELAY

V_CC=11V, V_FB=5V

μA

FSQ510(M)

Leading-Edge Blanking Time⁽⁸⁾

3.5

4.5

360

140

60

5.5

t_LEB

T_SD

ns

°C

130

150

Thermal Shutdown Temperature⁽⁸⁾

HYS

Synchronous Section

V_CC=11V, V_FB=1V

V_SH

0.55

0.05

180

0.70

0.10

200

0.85

0.15

220

V

Synchronous Threshold Voltage

V_SL

Synchronous Delay Time

t_Sync

ns

Total Device Section

Operating Supply Current

I_OP

V

_CC=11V, V_FB=5.5V

0.8

1.0

1.2

mA

(Control Part Only)

Startup Charging Current

Supply Voltage

V_CC=V_FB=0V,V_STR=40V

I_CH

1.0

27

mA

V

V_CC=V_FB=0V, V_STRSweep

V_STR

Note:

8. These parameters, although guaranteed, are not 100% tested in production.

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

5

Comparison between FSD210B and FSQ510

Function

FSD210B

FSQ510

Advantages of FSQ510

Fast Response

Control Mode

Voltage Mode

Current Mode

Easy-to-Design Control Loop

Constant Frequency

PWM

Valley Switching

Operation

Turn-on at Minimum Drain Voltage

High Efficiency and Low EMI

Operation Method

Frequency Variation Depending on the Ripple

of DC Link Voltage

High Efficiency and Low EMI

EMI Reduction

Method

Frequency

Modulation

Valley Switching

Soft-Start

Protection

3ms (Built-in)

TSD

5ms (Built-in)

Longer Soft-Start Time

TSD with Hysteresis Enhanced Thermal Shutdown Protection

Small Difference of Input Power between the

Short T_CLD

Power Balance

Long T_CLD

Low and High Input Voltage Cases

Less than 5W

Under Open-Frame

Condition at the

More than 6W

Under Open-Frame More Output Power Rating Available due to the

Condition at the

Power Ratings

Valley Switching

Universal Line Input Universal Line Input

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

6

Typical Performance Characteristics

Characteristic graphs are normalized at T_A=25°C.

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [

]

℃

Temperature [

]

℃

Figure 4. Operating Frequency (f_OSC) vs. T_A

Figure 5. Peak Current Limit (I_LIM) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [

]

℃

Temperature [

]

℃

Figure 6. Start Threshold Voltage (V_START) vs. T_A

Figure 7. Stop Threshold Voltage (V_STOP) vs. T_A

1.20

1.15

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [

]

℃

Temperature [

]

℃

Figure 8. Shutdown Feedback Voltage (V_SD) vs. T_A

Figure 9. Maximum Duty Cycle (D_MAX) vs. T_A

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

7

Typical Performance Characteristics (Continued)

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

-40

-25

0

25

50

75

100

125

Temperature [

]

℃

Temperature [

]

℃

Figure 10. Feedback Source Current (I_FB) vs. T_A

Figure 11. Shutdown Delay Current (I_DELAY) vs. T_A

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-40

-25

0

25

50

75

100

125

Temperature [

]

℃

Figure 12. Operating Supply Current (I_OP) vs. T_A

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

8

Functional Description

1. Startup: At startup, an internal high-voltage current

source supplies the internal bias and charges the

external capacitor (C_a) connected to the V_CCpin, as

illustrated in Figure 13. When V_CCreaches 8.7V, the

FPS begins switching and the internal high-voltage

current source is disabled. The FPS continues normal

switching operation and the power is supplied from the

auxiliary transformer winding unless V_CCgoes below the

stop voltage of 6.7V.

2.2 Leading-Edge Blanking (LEB): At the instant the

internal SenseFET is turned on, a high-current spike

usually occurs through the SenseFET, caused by

primary-side capacitance and secondary-side rectifier

reverse recovery. Excessive voltage across the R_sense

resistor would lead to incorrect feedback operation in

the current mode VS-PWM control. To counter this

effect, the FPS employs a leading-edge blanking

(LEB) circuit to inhibit the VS-PWM comparator for a

short time (t_LEB) after the SenseFET is turned on.

V_DC

V_refV_ref

C_a

I_delay

VS signal

OSC

I_FB

V

V_O

SenseFET

FOD817

KA431

fb

3

D1

D2

OB

6R

+

V_fb

Gate

driver

V_CC

V_str

*

R

5

8

-

I_CH

OLP

R_sense

V_SD

V_ref

6.7V/

8.7V

V_CCgood

Figure 14. Valley Switching Pulse-Width

Modulation (VS-PWM) Circuit

Internal

Bias

3. Synchronization: The FSQ510 (H or M) employs a

valley-switching technique to minimize the switching

noise and loss. The basic waveforms of the valley

switching converter are shown in Figure 15. To

minimize the MOSFET switching loss, the MOSFET

should be turned on when the drain voltage reaches its

minimum value, as shown in Figure 15. The minimum

drain voltage is indirectly detected by monitoring the

Figure 13. Startup Block

2. Feedback Control: This device employs current-

mode control, as shown in Figure 14. An opto-coupler

(such as the FOD817) and shunt regulator (such as the

KA431) are typically used to implement the feedback

network. Comparing the feedback voltage with the

voltage across the R_senseresistor makes it possible to

control the switching duty cycle. When the reference pin

voltage of the shunt regulator exceeds the internal

reference voltage of 2.5V, the opto-coupler LED current

increases, pulling down the feedback voltage and

reducing the drain current. This typically occurs when the

input voltage is increased or the output load is decreased.

V

_CCwinding voltage, as shown in Figure 15.

V_DS

V_RO

V_DC

2.1 Pulse-by-Pulse Current Limit: Because current-

mode control is employed, the peak current through the

SenseFET is limited by the inverting input of PWM

comparator (V_FB*), as shown in Figure 14. Assuming

that the 225µA current source flows only through the

internal resistor (6R + R=12.6kΩ), the cathode voltage

of diode D2 is about 2.8V. Since D1 is blocked when

the feedback voltage (V_FB) exceeds 2.8V, the maximum

voltage of the cathode of D2 is clamped at this voltage,

clamping V_FB*. Therefore, the peak value of the current

through the SenseFET is limited.

t_F

V_Sync

0.7V

0.1V

200ns Delay

MOSFET

Gate

ON

Figure 15. Valley Switching Waveforms

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

9

most applications. This protection is implemented in

auto-restart mode.

4. Protection Circuits: The FSQ510 (H or M) has two

self-protective functions, overload protection (OLP) and

thermal shutdown (TSD). The protections are

implemented as auto-restart mode. Once the fault

condition is detected, switching is terminated and the

SenseFET remains off. This causes V_CCto fall. When

V_FB

Overload Protection

4.7V

V_CCfalls down to the under-voltage lockout (UVLO) stop

voltage of 6.7V, the protection is reset and the startup

circuit charges the V_CCcapacitor. When V_CCreaches

the start voltage of 8.7V, the FSQ510 (H or M) resumes

normal operation. If the fault condition is not removed,

the SenseFET remains off and V_CCdrops to stop

voltage again. In this manner, the auto-restart can

alternately enable and disable the switching of the

power SenseFET until the fault condition is eliminated.

Because these protection circuits are fully integrated

into the IC without external components, reliability is

improved without increasing cost.

2.8V

t₁₂= C_B•(4.7-2.8)/I_delay

t₁

Figure 17. Overload Protection

t₂

t

Fault

occurs

Fault

removed

Power

on

V_ds

4.2 Thermal Shutdown (TSD): The SenseFET and the

control IC on a die in one package make it easy for the

control IC to detect the abnormal over temperature of

the SenseFET. If the temperature exceeds

approximately 140°C, the thermal shutdown triggers

and the FPS stops operation. The FPS operates in

auto-restart mode until the temperature decreases to

around 80°C, when normal operation resumes.

V_CC

5. Soft-Start: The FPS has an internal soft-start circuit

that increases the VS-PWM comparator inverting input

voltage, together with the SenseFET current, slowly

after it starts up. The typical soft-start time is 5ms. The

pulse width to the power switching device is

progressively increased to establish the correct working

conditions for transformers, inductors, and capacitors.

The voltage on the output capacitors is progressively

increased with the intention of smoothly establishing the

required output voltage. This helps prevent transformer

saturation and reduces stress on the secondary diode

during startup.

8.7V

6.7V

t

Normal

operation

Fault

situation

Normal

operation

Figure 16. Auto Restart Protection Waveforms

4.1 Overload Protection (OLP): Overload is defined as

the load current exceeding its normal level due to an

unexpected event. In this situation, the protection circuit

should trigger to protect the SMPS. However, even

when the SMPS is in the normal operation, the overload

protection circuit can be triggered during the load

transition. To avoid this undesired operation, the

overload protection circuit is designed to trigger only

after a specified time to determine whether it is a

transient situation or a true overload situation. Because

of the pulse-by-pulse current limit capability, the

maximum peak current through the SenseFET is limited

and, therefore, the maximum input power is restricted

with a given input voltage. If the output consumes more

than this maximum power, the output voltage (V_o)

decreases below the set voltage. This reduces the

current through the opto-coupler LED, which also

reduces the opto-coupler transistor current, increasing

the feedback voltage (V_FB). If V_FBexceeds 2.8V, D1 is

blocked and the 5µA current source starts to charge C_B

slowly up_.In this condition, V_FBcontinues increasing

until it reaches 4.7V, when the switching operation is

terminated, as shown in Figure 17. The delay time for

shutdown is the time required to charge C_Bfrom 2.8V to

4.7V with 5µA. A 20 ~ 50ms delay time is typical for

6. Burst-Mode Operation: To minimize power

dissipation in standby mode, the FPS enters burst-

mode operation. As the load decreases, the feedback

voltage decreases. As shown in Figure 18, the device

automatically enters burst mode when the feedback

voltage drops below V_BURL(750mV). At this point,

switching stops and the output voltages start to drop at

a rate dependent on standby current load. This causes

the feedback voltage to rise. Once it passes V_BURH

(850mV), switching resumes. The feedback voltage

then falls and the process repeats. Burst mode

alternately enables and disables switching of the

SenseFET, reducing switching loss in standby mode.

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FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

10

Once the SenseFET is enabled, the next start is

prohibited during the blanking time (t_B). After the

blanking time, the controller finds the first valley within

the duration of the valley detection window time (t_W)

(case A, B, and C). If no valley is found in t_W, the

internal SenseFET is forced to turn on at the end of t_W

(case D). Therefore, FSQ510, FSQ510H, and

FSQ510M have minimum switching frequency of

94.3kHz and maximum switching frequency of 132kHz,

typically, as shown in Figure 20.

Vo

Vo^set

V_FB

0.85V

0.75V

T_s^max=10.6µs

I_ds

I_DS

I_ds

A

B

t_B=7.6µs

T_{s_A}

V_ds

I_DS

t_B=7.6µs

time

Switching

disabled

T_{s_B}

Switching

disabled

t₁

t₂t₃

t₄

Figure 18. Burst-Mode Operation

7. Advanced Valley Switching Operation: To

I_DS

C

minimize switching loss and Electromagnetic

t_B=7.6µs

T_{s_C}

Interference (EMI), the MOSFET turns on when the

drain voltage reaches its minimum value in VS

converters. Due to the Discontinuous Conduction Mode

(DCM) operation, the feedback voltage is not changed,

despite the DC link voltage ripples, if the load condition

is not changed. Since the slope of the drain current is

changed depending on the DC link voltage, the turn-on

duration of MOSFET is variable with the DC link voltage

ripples. The switching period is changed continuously

with the DC link voltage ripples. Not only the switching

at the instant of the minimum drain voltage, but also the

continuous change of the switching period, reduces

EMI. V_Sconverters inherently scatter the EMI spectrum.

I_DS

D

t_B=7.6µs

t_W=3µs

T_s^max=10.6µs

Figure 19. Advanced VS Operation

Typical products for VSC turn the MOSFET on when the

first valley is detected. In this case, the range of the

switching frequency is very wide as a result of the load

variations. At a very light-load, for example, the

switching frequency can be as high as several hundred

kHz. Some products for VSC, such as Fairchild’s

FSCQ-series, define the turn-on instant of SenseFET

change at the first valley into at the second valley, when

the load condition decreases under its predetermined

level. The range of switching frequency narrows

somewhat. For details, consult an FSCQ-series

datasheet, such as:

When the resonant period is 2µs

132kHz

C

Constant

frequency

A

B

104kHz

94.3kHz

D

Bur st

mode

http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html

The range of the switching frequency can be limited

tightly in FSQ-series. Because a kind of blanking time

(t_B) is adopted, as shown in Figure 19, the switching

frequency has minimum and maximum values.

P_o

Figure 20. Switching Frequency Range of the

Advanced Valley Switching

www.fairchildsemi.com

FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

11

Package Dimensions

Figure 21. 7-Lead, Dual In-line Package (DIP)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify

or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically

the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

www.fairchildsemi.com

FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

12

Package Dimensions (Continued)

9.83

9.00

6.67

6.096

8.255

7.61

3.683

3.20

7.62

5.08 MAX

0.33 MIN

3.60

3.00

(0.56)

2.54

0.356

0.20

0.56

0.355

9.957

7.87

1.65

1.27

7.62

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE CONFORMS TO

JEDEC MS-001 VARIATION BA

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSIONS.

D) DIMENSIONS AND TOLERANC

ASME Y14.5M-1994

ES PER

E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.

Figure 22. 8-Lead, Dual In-line Package (DIP)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify

or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically

the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

www.fairchildsemi.com

FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

13

Package Dimensions (Continued)

MKT-MLSOP07ArevA

Figure 23. 7-Lead, MLSOP

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify

or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically

the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

www.fairchildsemi.com

FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

14

www.fairchildsemi.com

FSQ510, FSQ510H, and FSQ510M • Rev. 1.2.0

15


型号：	FSD210DH
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Green Mode Fairchild Power Switch (FPS?) for Valley Switching Converter ? Low EMI and High Efficiency 绿色模式飞兆功率开关（ FPS ？）对谷开关转换器？低EMI和高效率转换器开关
文件：	总15页 (文件大小：527K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSD210DH [FAIRCHILD]

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