FSGL134R4_技术文档

FSGL134R

Data Sheet

July 2001

File Number 5011

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 10A, 150V, r

• UIS Rated

• Total Dose

= 0.125Ω

DS(ON)

itle

bjec

tho

Fairchild Star*Power™ Rad Hard

MOSFETs have been specifically

TM

developed for high performance

applications in a commercial or

- Meets Pre-RAD Specifications to 100K RAD (Si)

military space environment.

Star*Power MOSFETs offer the system designer both

• Single Event

- Safe Operating Area Curve for Single Event Effects

extremely low r

and Gate Charge allowing the

DS(ON)

2

- SEE Immunity for LET of 82MeV/mg/cm with

yw

s ()

eato

development of low loss Power Subsystems. Star*Power

Gold FETs combine this electrical capability with total dose

radiation hardness up to 100K RADs while maintaining the

guaranteed performance for Single Event Effects (SEE)

which the Fairchild FS families have always featured.

V

up to 80% of Rated Breakdown and

of 5V Off-Bias

DS

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

OCI

O

mar

- Typically Survives 2E12 if Current Limited to I

AS

The Fairchild family of Star*Power FETs includes a series of

devices in various voltage, current and package styles. The

portfolio consists of Star*Power and Star*Power Gold

products. Star*Power FETs are optimized for total dose and

• Photo Current

- 2nA Per-RAD (Si)/s Typically

• Neutron

r

while exhibiting SEE capability at full rated voltage

DS(ON)

- Maintain Pre-RAD Specifications

for 1E13 Neutrons/cm

up to an LET of 37. Star*Power Gold FETs have been

optimized for SEE and Gate Charge combining SEE

performance to 80% of the rated voltage for an LET of 82

with extremely low gate charge characteristics.

2

ge

de

eO

nes

OC

EW

mar

2

- Usable to 1E14 Neutrons/cm

Symbol

D

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

G

S

Packaging

TO-205AF

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45228W.

Ordering Information

G

D

S

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering samples FSGL134D1

100K

TXV

FSGL134R3

FSGL134R4

Space

FSGL134R Rev. A1

4-1

FSGL134R

o

Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified

C

FSGL134R

150

UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

V

DS

Drain to Gate Voltage (R

= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

150

GS

DGR

Continuous Drain Current

o

T

= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

10

6

A

V

C

D

o

= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

D

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

40

±30

DM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Maximum Power Dissipation

o

T

= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

25

10

W

C

T

o

= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

T

o

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.20

40

W/ C

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I

A

AS

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

10

S

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

40

SM

o

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 150

300

C

J

STG

o

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

(Distance >0.063in (1.6mm) from Case, 10s Max)

C

L

Weight (Typical)

1.0 (Typical)

g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

o

Electrical Specifications

T

= 25 C, Unless Otherwise Specified

C

PARAMETER

SYMBOL

BV

TEST CONDITIONS

= 1mA, V = 0V

MIN

TYP

MAX

-

UNITS

V

Drain to Source Breakdown Voltage

Gate Threshold Voltage

I

150

-

DSS

GS(TH)

D

GS

o

V

I

= V

DS

,

T

= -55 C

-

5.5

4.5

-

V

GS

= 1mA

C

o

D

= 25 C

2.0

-

V

o

= 125 C

1.0

-

V

o

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I

V

= 120V,

= 0V

= 25 C

-

25

250

100

200

1.30

0.125

0.219

20

40

35

25

28

12

10

-

µA

nA

V

DSS

DS

GS

o

= 125 C

-

o

I

V

= ±30V

= 25 C

-

GSS

GS

o

= 125 C

-

Drain to Source On-State Voltage

Drain to Source On Resistance

V

= 12V, I = 10A

-

DS(ON)

GS

D

o

r

I

V

= 6A,

T

= 25 C

-

0.110

Ω

DS(ON)12

D

C

= 12V

o

GS

= 125 C

-

Ω

C

Turn-On Delay Time

Rise Time

t

V

R

= 75V, I = 10A,

-

ns

nC

V

d(ON)

DD

D

= 7.5Ω, V

= 12V,

L

GS

t

-

r

= 7.5Ω

GS

Turn-Off Delay Time

Fall Time

t

-

d(OFF)

t

-

f

Total Gate Charge

Gate Charge Source

Gate Charge Drain

Gate Charge at 20V

Threshold Gate Charge

Plateau Voltage

Q

V

= 0V to 12V

75V < V

< 120V,

-

26

10

8

g(12)

GS

DD

= 10A

I

D

Q

-

gs

-

gd

Q

V

= 0V to 20V

= 0V to 2V

-

40

3

g(20)

GS

Q

-

g(TH)

V

I

= 10A, V

= 15V

-

7

-

(PLATEAU)

D

DS

= 25V, V = 0V,

GS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

V

-

1200

275

16

-

pF

ISS

DS

f = 1MHz

C

-

OSS

-

RSS

o

Thermal Resistance Junction to Case

R

-

5.0

C/W

JC

θ

FSGL134R Rev. A1

4-2

FSGL134R

Source to Drain Diode Specifications

PARAMETER

Forward Voltage

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

1.5

190

-

UNITS

V

I

= 10A

-

SD

Reverse Recovery Time

Reverse Recovery Charge

t

= 10A, dI /dt = 100A/µs

ns

rr

SD

Q

1.0

µC

RR

o

Electrical Specifications up to 100K RAD T = 25 C, Unless Otherwise Specified

C

PARAMETER

Drain to Source Breakdown Volts

Gate to Source Threshold Volts

Gate to Body Leakage

SYMBOL

TEST CONDITIONS

= 0, I = 1mA

MIN

MAX

-

UNITS

(Note 3)

BV

V

150

V

DSS

GS

D

(Note 3)

V

= V , I = 1mA

DS

2.0

4.5

GS(TH)

D

(Notes 2, 3)

(Note 3)

I

= ±30V, V

= 0V

= 120V

-

100

25

nA

µA

V

GSS

DS

Zero Gate Leakage

= 0, V

DSS

DS

= 12V, I = 10A

Drain to Source On-State Volts

Drain to Source On Resistance

NOTES:

(Notes 1, 3)

V

1.30

0.125

DS(ON)

D

r

= 12V, I = 6

Ω

DS(ON)12

D

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both V

GS

= 12V, V

DS

= 0V and V

= 0V, V

= 80% BV .

DSS

GS

DS

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

(Note 6)

(Note 7)

MAXIMUM

APPLIED

TYPICAL LET

(MeV/mg/cm)

TYPICAL RANGE

V

BIAS

V

BIAS

GS

(V)

DS

(V)

TEST

SYMBOL

(µ)

Single Event Effects Safe Operating Area

SEESOA

37

60

82

36

32

28

-20

-10

-5

150

120

90

-10

NOTES:

4. Testing conducted at Brookhaven National Labs or Texas A&M.

2

o

5. Fluence = 1E5 ions/cm (typical), T = 25 C.

6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au

7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Performance Curves ^{Unless Otherwise Specified}

2

µ

LET = 37MeV/mg/cm , RANGE = 36

2

LET = 60MeV/mg/cm , RANGE = 32

200

160

120

80

2

LET = 82MeV/mg/cm , RANGE = 28

LET = 37

2

FLUENCE = 1E5 IONS/cm (TYPICAL)

150

100

50

LET = 82

40

LET = 60

20

o

0

TEMP = 25

-4

C

0

5

10

15

25

30

35

40

0

-8

-12

-16

-20

-24

NEGATIVE V

BIAS (V)

GS

V

(V)

GS

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. TYPICAL SEE SIGNATURE CURVE

FSGL134R Rev. A1

4-3

FSGL134R

Performance Curves ^{Unless Otherwise Specified}(Continued)

1E-3

12

10

8

1E-4

ILM = 10A

30A

1E-5

6

100A

300A

4

1E-6

2

0

1E-7

-50

0

50

150

100

o

10

30

100

300

1000

DRAIN SUPPLY (V)

T

, CASE TEMPERATURE ( C)

C

FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO

FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

LIMIT GAMMA DOT CURRENT TO I

AS

100

10

1

o

T

= 25

C

12V

Q

G

100

µ

s

1ms

Q

GD

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(ON)

GS

V

G

10ms

.1

1

10

100

500

CHARGE

FIGURE 6. BASIC GATE CHARGE WAVEFORM

V

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

70

2.5

V

= 14V

= 12V

= 10V

= 8V

GS

PULSE DURATION = 250ms, V

= 12V, I = 6A

D

GS

60

50

40

30

20

10

0

2.0

1.5

1.0

0.5

0

V

= 6V

GS

0

2

4

6

8

10

-80

-40

0

40

80

120

160

o

V

, DR A IN -TO-SO UR C E VOLTA G E (V)

DS

T

, JUNCTION TEMPERATURE ( C)

J

FIGURE 7. TYPICAL NORMALIZED r

TEMPERATURE

vs JUNCTION

FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS

DS(ON)

FSGL134R Rev. A1

4-4

FSGL134R

Performance Curves ^{Unless Otherwise Specified}(Continued)

10

1

0.5

0.2

0.1

0.05

0.02

0.01

P

DM

SINGLE PULSE

0.01

NOTES:

DUTY FACTOR: D = t /t

t

1

2

1

t

PEAK T = P

DM

x Z

+ T

2

J

θJC

C

0.001

-5

-4

-3

10

-2

10

-1

0

1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

100

o

STARTING T = 25

C

J

o

STARTING T = 150

J

C

10

IF R = 0

t

= (L) (I ) / (1.3 RATED BV

- V

DD

)

AV

IF R

AS

DSS

≠

0

t

= (L/R) ln [(I *R) / (1.3 RATED BV

- V ) + 1]

DD

AV

AS

DSS

1

.001

1

10

.01

t

.1

, TIME IN AVALANCHE (ms)

AV

FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

ELECTRONIC SWITCH OPENS

WHEN I IS REACHED

AS

V

DS

L

BV

+

I

-

DSS

CURRENT

TRANSFORMER

AS

t

P

V

DS

I

AS

V

VARY t TO OBTAIN

DD

P

+

50Ω

REQUIRED PEAK I

AS

V

DD

V

≤ 20V

-

GS

50V-150V

DUT

50Ω

t

P

0V

t

AV

FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 12. UNCLAMPED ENERGY WAVEFORMS

FSGL134R Rev. A1

4-5

FSGL134R

Test Circuits and Waveforms

t

ON

OFF

t

d(OFF)

V

DD

t

d(ON)

t

f

r

R

L

V

DS

90%

V

DS

V

= 12V

GS

10%

DUT

0V

90%

50%

R

GS

50%

V

GS

10%

PULSE WIDTH

FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT

FIGURE 14. RESISTIVE SWITCHING WAVEFORMS

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).

o

Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified

C

PARAMETER

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Drain to Source On Resistance

Gate Threshold Voltage

NOTES:

SYMBOL

TEST CONDITIONS

= ±30V

MAX

UNITS

nA

I

V

±20 (Note 8)

±25 (Note 8)

±20% (Note 9)

GSS

GS

I

= 80% Rated Value

o

µA

DSS

DS

r

T

= 25 C at Rated I

D

Ω

DS(ON)

C

V

I

= 1.0mA

V

GS(TH)

D

8. Or 100% of Initial Reading (whichever is greater).

9. Of Initial Reading.

Screening Information

TEST

JANTXV EQUIVALENT

JANS EQUIVALENT

Unclamped Inductive Switching

Thermal Response

Gate Stress

V

= 20V, L = 0.1mH; Limit = 40A

V

= 20V, L = 0.1mH; Limit = 40A

GS(PEAK)

t

= 10ms; V = 25V; I = 1A; LIMIT = 60mV

t

= 10ms; V = 25V; I = 1A; LIMIT = 60mV

H

V

= 45V, t = 250µs

V

= 45V, t = 250µs

GS

Pind

Optional

Required

MIL-PRF-19500 Group A,

Subgroup 2 (All Static Tests at 25 C)

Pre Burn-In Tests (Note 10)

MIL-PRF-19500 Group A,

Subgroup 2 (All Static Tests at 25 C)

o

Steady State Gate

Bias (Gate Stress)

MIL-PRF-750, Method 1042, Condition B

V

= 80% of Rated Value,

V

= 80% of Rated Value,

GS

= 150 C, Time = 48 hours

GS

T = 150 C, Time = 48 hours

A

o

T

A

Interim Electrical Tests (Note 10)

All Delta Parameters Listed in the Delta Tests and

Limits Table

All Delta Parameters Listed in the Delta Tests and

Limits Table

Steady State Reverse

Bias (Drain Stress)

MIL-PRF-750, Method 1042, Condition A

V

= 80% of Rated Value,

V

= 80% of Rated Value,

DS

= 150 C, Time = 160 hours

DS

T = 150 C, Time = 240 hours

A

o

T

A

PDA

10%

5%

Final Electrical Tests (Note 10)

MIL-PRF-19500, Group A, Subgroup 2

MIL-PRF-19500, Group A,

Subgroups 2 and 3

NOTE:

10. Test limits are identical pre and post burn-in.

Additional Tests

PARAMETER

Safe Operating Area

Thermal Impedance

SYMBOL

TEST CONDITIONS

= 120V, t = 10ms

MAX

0.7

UNITS

A

SOA

V

DS

= 500ms; V = 25V; I = 1A

∆V

SD

t

230

mV

H

FSGL134R Rev. A1

4-6

FSGL134R

Rad Hard Data Packages - Fairchild Power Transistors

TXV Equivalent

Class S - Equivalents

1. RAD HARD TXV EQUIVALENT - STANDARD DATA

PACKAGE

1. RAD HARD “S” EQUIVALENT - STANDARD DATA

PACKAGE

A. Certificate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

D. Group A

E. Group B

F. Group C

G. Group D

- Attributes Data Sheet

E. Preconditioning - Attributes Data Sheet

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA

PACKAGE

F. Group A

G. Group B

H. Group C

I. Group D

- Attributes Data Sheet

A. Certificate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

- Pre and Post Burn-In Read and Record

Data

2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL

DATA PACKAGE

D. Group A

E. Group B

- Attributes Data Sheet

A. Certificate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

- Attributes Data Sheet

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating

Life Read and Record Data (Subgroup B6)

E. Preconditioning - Attributes Data Sheet

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

F. Group C

G. Group D

- Attributes Data Sheet

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

- X-Ray and X-Ray Report

- Attributes Data Sheet

- Pre and Post RAD Read and Record Data

F. Group A

G. Group B

H. Group C

I. Group D

- Attributes Data Sheet

- Subgroups A2, A3, A4, A5 and A7 Data

- Attributes Data Sheet

- Subgroups B1, B3, B4, B5 and B6 Data

- Attributes Data Sheet

- Subgroups C1, C2, C3 and C6 Data

- Attributes Data Sheet

- Pre and Post Radiation Data

FSGL134R Rev. A1

4-7

FSGL134R

TO-205AF

3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE

ØD

INCHES

MIN

MILLIMETERS

ØD

1

SYMBOL

MAX

0.180

0.021

0.370

0.335

0.105

0.210

0.105

0.020

0.034

0.045

0.560

-

MIN

4.07

0.41

8.89

8.01

2.42

4.83

2.42

0.26

0.72

0.74

12.70

1.91

MAX

4.57

0.53

9.39

8.50

2.66

5.33

2.66

0.50

0.86

1.14

14.22

-

NOTES

P

A

0.160

0.016

0.350

0.315

0.095

0.190

0.095

0.010

0.028

0.029

0.500

0.075

-

2, 3

-

A

Øb

ØD

SEATING

PLANE

h

ØD

e

-

1

L

Øb

4

-

e

1

2

e

1

h

j

-

o

90

2

k

L

P

-

e

2

1

3

5

o

45

j

k

NOTES:

1. These dimensions are within allowable dimensions of Rev. E of

JEDEC TO-205AF outline dated 11-82.

2. Lead dimension (without solder).

3. Solder coating may vary along lead length, add typically 0.002

inches (0.05mm) for solder coating.

4. Positionof lead to be measured 0.100inches (2.54mm) from bottom

of seating plane.

5. This zone controlled for automatic handling. The variation in

actual diameter within this zone shall not exceed 0.010 inches

(0.254mm).

6. Lead no. 3 butt welded to stem base.

7. Controlling dimension: Inch.

8. Revision 3 dated 6-94.

FSGL134R Rev. A1

4-8

FSGL134R

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

®

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FAST

OPTOPLANAR™

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Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

Power247™

PowerTrench

®

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EcoSPARK™

E CMOS™

Ensigna™

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LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QS™

QTOptpelectronics™

Quiet Series™

SILENTSWITCHER

SMART START™

TinyLogic™

2

TruTranslation™

UHC™

®

UltraFET

FACT Quiet Series™

VCX™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

FSGL134R Rev. A1

4-9


型号：	FSGL134R4
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Power Field-Effect Transistor, 10A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 开关脉冲晶体管
文件：	总9页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSGL134R4 [FAIRCHILD]

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