FTM3725 [FAIRCHILD]
NPN Transistor; NPN晶体管型号: | FTM3725 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | NPN Transistor |
文件: | 总4页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FTM3725
B4
C2
NPN Transistor
E4
B4
E3
•
This device is designed for high current, low impedance line driver
B2
E2
B1
applications.
C4
E1
C4
C4
C3
•
Sourced from process 26.
C2
C1
C1
SOIC-16
Mark: FTM3725
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Value
40
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
CEO
60
V
CBO
EBO
6.0
1.2
V
I
- Continuous
A
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
J
STG
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V
V
V
V
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
I
= 10mA, I = 0
40
60
60
6.0
V
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CBO
C
C
C
E
B
= 10µA, V = 0
BE
= 10µA, I = 0
E
= 10µA, I = 0
C
I
V
V
= 50V, I = 0
100
10
nA
µA
CB
CB
E
= 50V, I = 0, T = 100°C
E
a
On Characteristics *
h
DC Current Gain
I
I
I
I
I
I
I
I
= 10mA, V = 1.0V
30
60
30
40
35
20
20
25
FE
C
C
C
C
C
C
C
C
CE
= 100mA, V = 1.0V
180
CE
= 100mA, V = 1.0V, T = 55°C
CE
a
= 300mA, V = 1.0V
CE
= 500mA, V = 1.0V
CE
= 500mA, V = 1.0V, T = 55°C
CE
a
= 800mA, V = 2.0V
CE
= 1.0mA, V = 5.0V
CE
V
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
I
I
I
I
= 10mA, I = 1.0mA
0.25
0.26
0.4
0.52
0.8
V
V
V
V
V
V
CE
C
C
C
C
C
C
B
= 100mA, I = 10mA
B
= 300mA, I = 30mA
B
= 500mA, I = 50mA
B
= 800mA, I = 80mA
B
= 1.0mA, I = 100mA
0.95
B
(sat)
I
I
I
I
I
I
= 10mA, I = 1.0mA
0.76
0.86
1.1
1.2
1.5
V
V
V
V
V
V
BE
C
C
C
C
C
C
B
= 100mA, I = 10mA
B
= 300mA, I = 30mA
B
= 500mA, I = 50mA
B
= 800mA, I = 80mA
B
= 1.0mA, I = 100mA
1.7
B
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
Electrical Characteristics* (Continued) T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Small Signal Characteristics
f
Current Gain Bandwidth Product
Output Capacitance
I
= 50mA, V = 10V, f = 100MHz
250
MHz
pF
T
C
CE
C
C
V
V
= 10V, I = 0, f = 1.0MHz
15
65
obo
ibo
CB
EB
E
Input Capacitance
= 0.5V, I = 0, f = 1.0MHz
pF
C
Switching Characteristics
t
Turn-on Time
Delay Time
Rise Time
V
= 30V, V = 3.8V
= 500mA, I = 50mA
B1
20
10
ns
ns
ns
ns
ns
ns
on
CC
BE
I
t
C
d
t
t
t
t
12
r
Turn-off Time
Storage Time
Fall Time
V
= 30V, I = 500mA
250
235
15
off
s
CC
C
I
= I = 50mA
B2
B1
f
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
1.0
8.0
W
mW/°C
D
R
Thermal Resistance, Junction to Ambient
Effectine 4 Die
θJA
125
240
°C/W
°C/W
Each Die
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
Package Dimensions
SOIC-16
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
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GlobalOptoisolator™
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ISOPLANAR™
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MICROWIRE™
MSX™
Power247™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
A
CEx™
PowerSaver™
PowerTrench®
QFET®
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TinyLogic®
HiSeC™
TINYOPTO™
TruTranslation™
UHC™
EcoSPARK™
I2C™
MSXPro™
OCX™
OCXPro™
E2CMOS™
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ImpliedDisconnect™
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UltraFET®
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SILENT SWITCHER® VCX™
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SPM™
Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11
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