H11A617DSD [FAIRCHILD]
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS; 4引脚光电晶体管光耦合器型号: | H11A617DSD |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
文件: | 总9页 (文件大小:497K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
PACKAGE
H11AA814 SCHEMATIC
1
2
4
COLLECTOR
4
3 EMITTER
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
H11A617 & H11A817 SCHEMATIC
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
1
2
4
COLLECTOR
ANODE
FEATURES
CATHODE
3 EMITTER
•
•
Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814: 20-300%
H11AA814A: 50-150%
H11A617A: 40%-80%
H11A617B: 63%-125%
H11A617C: 100%-200%
H11A617D: 160%-320%
H11A817: 50-600%
H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
•
Minimum BV
of 70V guaranteed
CEO
APPLICATIONS
H11AA814 Series
•
•
•
AC line monitor
Unknown polarity DC sensor
Telephone line interface
H11A617 and H11A817 Series
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Parameter
TOTAL DEVICE
Symbol
Device
Value
Units
T
Storage Temperature
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
200
°C
°C
STG
T
Operating Temperature
OPR
T
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
°C
SOL
P
mW
D
I
Continuous Forward Current
All
50
mA
V
F
H11A617A/B/C/D
H11A817/A/B/C/D
6
5
V
Reverse Voltage
R
I (pk)
Forward Current - Peak (1 µs pulse, 300 pps)
All
1.0
100
1.33
A
F
mW
LED Power Dissipation (25°C ambient)
Derate above 25°C
P
All
D
mW/°C
DETECTOR
V
Collector-Emitter Voltage
All
70
V
V
CEO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7
6
V
Emitter-Collector Voltage
ECO
I
Continuous Collector Current
All
50
150
2.0
mA
mW
C
Detector Power Dissipation (25°C ambient)
Derate above 25°C
P
All
D
mW/°C
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified.)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min Typ* Max Unit
(I = 60 mA)
EMITTER
H11A617A/B/C/D
H11A817/A/B/C/D
H11AA814/A
1.35 1.65
F
(I = 20 mA)
V
1.2
1.2
1.5
1.5
V
F
F
Input Forward Voltage
(I = 20 mA)
F
(V = 6.0 V)
H11A617A/B/C/D
H11A817/A/B/C/D
R
I
Reverse Leakage Current
.001
10
µA
R
(V = 5.0 V)
R
DETECTOR
Collector-Emitter Breakdown
Voltage
(I = 1.0 mA, I = 0) BV
ALL
70
100
10
V
V
C
F
CEO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7
6
Emitter-Collector Breakdown
Voltage
(I = 100 µA, I = 0) BV
E
F
ECO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
100
50
(V = 10V, I = 0)
I
CEO
Collector-Emitter Dark Current
Collector-Emitter Capacitance
1
8
nA
pF
CE
F
H11A617A/B
ALL
(V = 0 V, f = 1 MHz)
C
CE
CE
*Typical values at T = 25°C.
A
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
TRANSFER CHARACTERISTICS (T = 25°C Unless otherwise specified.)
A
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ* Max Unit
(I = 1 mA, V = 5 V) (note 1)
H11AA814
20
300
%
F
CE
(I = 1 mA, V = 5 V) (note 1)
H11AA814A
H11A617A
50
40
150
80
%
%
%
%
%
%
%
%
%
%
%
%
%
%
F
CE
H11A617B
63
125
200
320
600
160
260
400
600
(I = 10 mA, V = 5 V) (note 1)
F
CE
H11A617C
H11A617D
H11A817
100
160
50
Current Transfer
Ratio
CTR
H11A817A
80
(I = 5 mA, V = 5 V) (note 1)
H11A817B
130
200
300
13
F
CE
H11A817C
H11A817D
H11A617A
H11A617B
22
(I = 1 mA, V = 5 V) (note 1)
F
CE
H11A617C
H11A617D
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
34
56
0.2
0.4
0.2
(I = 1 mA, I = 20 mA)
C
F
Collector-Emitter
Saturation Voltage
(I = 2.5 mA, I = 10 mA)
V
CE (SAT)
V
C
F
(I = 1 mA, I = 20 mA)
C
F
AC Characteristic
Rise Time
(I = 2 mA, V = 2 V, R = 100V) (note 2)
t
ALL
ALL
2.4
2.4
18
18
µs
µs
C
CE
L
r
(I = 2 mA, V = 2 V, R = 100V) (note 2)
t
Fall Time
C
CE
L
f
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Test Conditions
Symbol
Min
Typ*
Max
Units
V
f = 60Hz, t = 1 min
5300
Vac(rms)
ISO
11
(V = 500 VDC)
R
Ω
10
I-O
ISO
(V = 0, f = 1 MHz)
C
Isolation Capacitance
0.5
pf
I-O
ISO
*Typical values at T = 25°C.
A
NOTES
1. Current Transfer Ratio (CTR) = I /I x 100%.
C F
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
© 2003 Fairchild Semiconductor Corporation
Page 3 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Fig. 1 Normalized CTR vs. Forward Current
Fig. 2 Normalized CTR vs. Ambient Temperature
1.4
1.2
1.2
I
= 10 mA
F
1
1
I
= 5 mA
F
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0
0
5
10
15
20
25
30
-50
-25
0
+25
+50
+75
+100
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 4 Forward Voltage vs. Forward Current
.14
.12
I
I
= 20 mA
= 1 mA
F
1.7
C
1.5
1.3
1.1
0.9
0.7
0.5
.1
.08
T = -55˚C
.06
.04
T = 25˚C
T = 100˚C
.02
0
-50
-25
0
25
50
75
100
125
0.1
0.2
0.5
1.0
2.0
5
10
20
50
100
T
- AMBIENT TEMPERATURE (˚C)
A
I
F
- FORWARD CURRENT (mA)
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
25
20
15
10
5
I
= 20 mA
F
I
F
= 10 mA
I
= 5 mA
F
I
= 1 mA
8
F
0
0
1
2
3
4
5
6
7
9
10
V
- COLLECTOR-EMITTER VOLTAGE (V)
CE
© 2003 Fairchild Semiconductor Corporation
Page 4 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Fig. 7 Rise and Fall Time
vs. Load Resistor
Fig. 6 Collector Leakage Current
vs. Ambient Temperature
1000
100
10
10
I
V
T
= 5 mA
V
CE
= 10 V
F
= 5 V
CC
= 25˚C
1
toff
A
t
f
10-1
10-2
10-3
10-4
10-5
10-6
t
on
1
t
r
0.1
0.1
1
10
100
0
25
50
75
100
125
R - LOAD RESISTOR (KV)
T
- AMBIENT TEMPERATURE (˚C)
A
Figure 8. Switching Time Test Circuit and Waveforms
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
R
L = 100Ω
10%
INPUT
Adjust
OUTPUT
OUTPUT PULSE
90%
tr
tf
IF to produce IC = 2 mA
Recommended Thermal Reflow Profile for Surface Mount DIP Package
Temperature (°C)
225°C
250
220°C: 10 sec to 40 sec
200
150
100
50
Time > 183°C: 120 sec to 180 sec
0
Time (Min)
0
1
2
3
4
5
© 2003 Fairchild Semiconductor Corporation
Page 5 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.250 (6.35)
0.300 (7.62)
0.190 (4.83)
0.175 (4.45)
0.270 (6.86)
0.250 (6.35)
TYP
0.190 (4.83)
0.175 (4.45)
0.200 (5.08)
0.115 (2.92)
0.200 (5.08)
0.115 (2.92)
0.070 (1.78)
0.045 (1.14)
0.315 (8.00)
MIN
0.020 (0.51)
MIN
0.016 (0.40)
0.008 (0.20)
0.154 (3.90)
0.405 (10.30)
MAX
0.020 (0.51)
0.120 (3.05)
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0.016 (0.40)
0.008 (0.20)
15°
0.300 (7.62)
typ
Lead Coplanarity 0.004 (0.10) MAX
0.100 (2.54)
TYP
Package Dimensions (0.4” Lead Spacing)
Footprint Dimensions (Surface Mount)
0.070 (1.78)
0.060 (1.52)
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.190 (4.83)
0.100 (2.54)
0.295 (7.49)
0.250 (6.35)
0.200 (5.08)
0.175 (4.45)
0.115 (2.92)
0.030 (0.76)
0.415 (10.54)
0.154 (3.90)
0.004 (0.10)
0.120 (3.05)
MIN
0.016 (0.40)
0.008 (0.20)
0.400 (10.16)
TYP
0.100 (2.54)
TYP
0 to 15°
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 6 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
ORDERING INFORMATION
Option
Order Entry Identifier
Description
S
SD
.S
.SD
Surface Mount Lead Bend
Surface Mount; Tape and reel
0.4" Lead Spacing
W
.W
300
300W
3S
.300
.300W
.3S
VDE 0884
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape & Reel
3SD
.3SD
MARKING INFORMATION
4
5
6
V X YY T
814
3
2
1
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
© 2003 Fairchild Semiconductor Corporation
Page 7 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Carrier Tape Specifications
12.0 0.1
4.0 0.1
5.00 0.20
0.30 0.05
Ø1.55 0.05
4.0 0.1
1.75 0.10
7.5 0.1
16.0 0.3
13.2 0.2
4.95 0.20
10.30 0.20
User Direction of Feed
Ø1.6 0.1
0.1 MAX
NOTE
All dimensions are in millimeters
© 2003 Fairchild Semiconductor Corporation
Page 8 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2003 Fairchild Semiconductor Corporation
Page 9 of 9
4/24/03
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