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H11A817ASD_NF098 [FAIRCHILD]

Transistor Output Optocoupler, 1-Element, 5000V Isolation, SURFACE MOUNT, DIP4;
H11A817ASD_NF098
型号： H11A817ASD_NF098
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Transistor Output Optocoupler, 1-Element, 5000V Isolation, SURFACE MOUNT, DIP4

输出元件 光电
文件： 总11页 (文件大小：527K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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July 2006  
H11AA814 Series, H11A617 Series, H11A817 Series  
4-Pin Phototransistor Optocouplers  
tm  
Features  
Applications  
■ AC input response (H11AA814 only)  
■ Compatible to Pb-free IR reflow soldering  
■ Compact 4-pin dual in-line package  
■ Current transfer ratio in selected groups:  
H11AA814 Series  
■ AC line monitor  
■ Unknown polarity DC sensor  
■ Telephone line interface  
H11AA814: 20-300%  
H11AA814A: 50-150%  
H11A617A: 40%-80%  
H11A617B: 63%-125%  
H11A617C: 100%-200% H11A817D: 300-600%  
H11A617D: 160%-320%  
H11A817:  
50-600%  
H11A617 and H11A817 Series  
■ Power supply regulators  
H11A817A: 80-160%  
H11A817B: 130-260%  
H11A817C: 200-400%  
■ Digital logic inputs  
■ Microprocessor inputs  
Description  
■ C-UL, UL and VDE approved  
The H11AA814 consists of two gallium arsenide infrared  
emitting diodes, connected in inverse parallel, driving a  
silicon phototransistor output in a 4-pin dual in-line  
package. The H11A617/817 Series consists of a gallium  
■ High input-output isolation voltage of 5000Vrms  
■ Minimum BV  
of 70V guaranteed  
CEO  
arsenide infrared emitting diode driving  
phototransistor in a 4-pin dual in-line package.  
a silicon  
Package  
Schematics  
H11AA814  
4
ANODE, CATHODE  
CATHODE, ANODE  
1
2
4
COLLECTOR  
1
3 EMITTER  
H11A617 & H11A817  
1
2
4
COLLECTOR  
ANODE  
CATHODE  
3 EMITTER  
©2005 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Absolute Maximum Ratings (T = 25°C Unless otherwise specified.)  
A
Symbol  
Parameter  
Device*  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
All  
All  
All  
All  
-55 to +150  
-55 to +100  
260 for 10 sec  
200  
°C  
°C  
STG  
T
Operating Temperature  
OPR  
T
Lead Solder Temperature  
°C  
SOL  
P
Total Device Power Dissipation (-55°C to 50°C)  
mW  
D
EMITTER  
I
Continuous Forward Current  
Reverse Voltage  
814 Series  
617, 817 Series  
50  
50  
mA  
V
F
V
P
617 Series  
817 Series  
6
6
R
D
LED Power Dissipation (25°C ambient)  
No derating up to 100°C  
All  
70  
mW  
DETECTOR  
V
V
Collector-Emitter Voltage  
Emitter-Collector Voltage  
All  
70  
V
V
CEO  
ECO  
814, 817 Series  
617 Series  
6
7
I
Continuous Collector Current  
All  
All  
50  
150  
2.9  
mA  
mW  
C
P
Detector Power Dissipation (25°C ambient)  
Derate above 90°C  
D
mW/°C  
Electrical Characteristics (T = 25°C Unless otherwise specified.)  
A
Individual Component Characteristics  
Symbol Parameter  
EMITTER  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
V
Input Forward Voltage I = 60mA  
617 Series  
817 Series  
814 Series  
617 Series  
817 Series  
1.35  
1.2  
1.65  
1.5  
1.5  
10  
V
F
F
I = 20mA  
F
I = 20mA  
1.2  
F
I
Reverse Leakage  
Current  
V
V
= 6.0V  
= 5.0V  
.001  
µA  
R
R
R
DETECTOR  
BV  
Collector-Emitter  
Breakdown Voltage  
I
= 0.1 mA, I = 0  
ALL  
70  
100  
V
V
CEO  
C
F
BV  
Emitter-Collector  
Breakdown Voltage  
I = 10 µA, I = 0  
814, 817 Series  
617 Series  
6
7
10  
10  
1
ECO  
E
F
I
Collector-Emitter  
Dark Current  
V
= 10V, I = 0  
H11AA814/A, 817 Series,  
H11A617C/D  
100  
50  
nA  
CEO  
CE  
F
H11A617A/B  
*Typical values at T =25°C  
A
2
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Transfer Characteristics (T = 25°C Unless otherwise specified.)  
A
Symbol DC Characteristic  
Test Conditions  
Device  
H11AA814  
H11AA814A  
H11A617A  
H11A617B  
H11A617C  
H11A617D  
H11A817  
Min Typ* Max Unit  
(1)  
CTR  
Current Transfer  
Ratio  
I = 1mA, V = 5V  
20  
50  
300  
150  
80  
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
V
F
CE  
(1)  
I = 1mA, V = 5V  
F
CE  
(1)  
(I = 10mA, V = 5V  
40  
F
CE  
63  
125  
200  
320  
600  
160  
260  
400  
600  
100  
160  
50  
(1)  
(I = 5mA, V = 5V  
F
CE  
H11A817A  
H11A817B  
H11A817C  
H11A817D  
H11A617A  
H11A617B  
H11A617C  
H11A617D  
814 series  
617 series  
817 series  
80  
130  
200  
300  
13  
(1)  
I = 1mA, V = 5V  
F
CE  
22  
34  
56  
V
Collector-Emitter  
Saturation Voltage  
I = 1mA, I = 20mA  
0.2  
0.4  
0.2  
CE (SAT)  
C
F
I = 2.5mA, I = 10mA  
C
F
I = 1mA, I = 20mA  
C
F
AC CHARACTERISTIC  
(2)  
(2)  
t
Rise Time  
Fall Time  
I = 2mA, V = 2 V, R = 100Ω  
ALL  
ALL  
4
3
18  
18  
µs  
µs  
r
C
CE  
L
t
I = 2mA, V = 2 V, R = 100Ω  
C CE L  
f
Isolation Characteristics  
Symbol  
Characteristic  
Test Conditions  
Min.  
Typ.*  
Max.  
Units  
V
Input-Output Isolation Voltage  
(note 3)  
(f = 60Hz, t = 1 min)  
5000  
Vac(rms)  
ISO  
(I ≤ 2µA)  
I-O  
10  
11  
R
C
Isolation Resistance  
Isolation Capacitance  
(V = 500 VDC)  
5x10  
10  
Ω
ISO  
I-O  
(V = 0, f = 1 MHz)  
0.6  
1.0  
pf  
ISO  
I-O  
*Typical values at T = 25°C.  
A
Notes:  
1. Current Transfer Ratio (CTR) = I /I x 100%.  
C F  
2. For test circuit setup and waveforms, refer to Figure 13.  
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.  
3
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Typical Performance Curves  
Fig. 2. Relative Current Transfer Ratio  
vs. Ambient Temperature  
Fig. 1 Current Transfer Ratio  
vs. Forward Current  
160  
140  
120  
200  
180  
160  
140  
V
= 5V  
CE  
Ta = 25°C  
H11AA814  
I
V
= 1mA  
F
= 5V  
CE  
100  
80  
120  
I
V
= 5mA  
F
= 5V  
CE  
814  
100  
617  
H11AA617 & H11AA817  
817  
80  
60  
40  
20  
0
60  
40  
20  
0
1
2
5
10  
20  
50  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
FORWARD CURRENT I (mA)  
F
AMBIENT TEMPERATURE T (°C)  
A
Fig. 3 Collector-Emitter Saturation Voltage  
vs. Ambient Temperature  
Fig. 4 Forward Current vs. Forward Voltage  
100  
10  
1
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
I
I
= 20 mA  
= 1 mA  
F
C
TA =100°C  
75°C  
50°C  
25°C  
0°C  
-30°C  
-55°C  
0.1  
0.5  
1.0  
1.5  
2.0  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
FORWARD VOLTAGE V (V)  
T
- AMBIENT TEMPERATURE (˚C)  
F
A
Fig. 5 Collector Current vs.  
Collector-Emitter Voltage (H11AA814)  
Fig. 6 Collector Current vs. Collector-Emitter Voltage  
(H11AA617 and H11AA817)  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
Ta  
=
25°C  
I
IF = 30mA  
Ta = 25°C  
I
= 30 mA  
F
20mA  
Pc(MAX.)  
20mA  
Pc (Max)  
10mA  
10mA  
5mA  
5mA  
1mA  
0
0
1
2
3
4
5
6
7
8
9
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
COLLECTOR-EMITTER VOLTAGE V (V)  
CE  
COLLECTOR-EMITTER VOLTAGE V (V)  
CE  
4
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Typical Performance Curves (Continued)  
Fig. 7 Collector Dark Current vs Ambient Temperature  
Fig. 8 Response Time vs. Load Resistance  
10000  
500  
200  
100  
50  
20  
10  
5
V
= 2V  
CE  
V
= 20V  
CE  
I
= 2mA  
C
1000  
100  
10  
Ta = 25°C  
tr  
tf  
td  
1
ts  
2
1
0.1  
0.01  
0.5  
0.2  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
AMBIENT TEMPERATURE T (°C)  
LOAD RESISTANCE R (kW)  
A
L
Fig. 9. Frequency Response (H11AA814)  
Fig. 10. Frequency Response (H11AA617 and H11AA817)  
V
= 2V  
CE  
= 2mA  
V
I
= 2V  
CE  
I
C
= 2mA  
Ta = 25°C  
C
Ta = 25°C  
0
0
10  
20  
1kΩ  
100Ω  
R = 10kΩ  
L
R =10kΩ  
L
1kΩ  
100Ω  
-10  
-20  
0.2  
0.5  
1
2
5
10  
20  
50 100  
500  
0.5  
15  
2
10  
100  
1000  
FREQUENCY f (kHz)  
FREQUENCY f (kHz)  
Fig. 12. Collector Power Dissipation  
vs. Ambient Temperature  
Fig. 11. LED Power Dissipation vs. Ambient Temperature  
100  
80  
60  
40  
20  
0
200  
150  
100  
50  
0
-55  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-55  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
AMBIENT TEMPERATURE T (°C)  
A
AMBIENT TEMPERATURE T (°C)  
A
5
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Test Circuit  
Figure 13.Test Circuit  
Test Circuit for Response Time  
Input  
Vcc  
Output  
10%  
90%  
RL  
RD  
Output  
Input  
td  
ts  
tr  
tf  
Test Circuit for Frequency Response  
Vcc  
RL  
RD  
Output  
6
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Package Dimensions  
Through Hole  
Surface Mount  
0.312 (7.92)  
0.288 (7.32)  
0.276 (7.00)  
0.236 (6.00)  
0.312 (7.92)  
0.288 (7.32)  
0.200 (5.10)  
0.161 (4.10)  
0.200 (5.10)  
0.161 (4.10)  
0.276 (7.00)  
0.236 (6.00)  
0.157 (4.00)  
0.118 (3.00)  
0.157 (4.00)  
0.118 (3.00)  
0.010 (0.26)  
0.051 (1.30)  
0.043 (1.10)  
0.049 (1.25)  
0.030 (0.76)  
0.130 (3.30)  
0.020 (0.51)  
0.091 (2.30)  
TYP  
0.024 (0.60)  
0.004 (0.10)  
0.412 (10.46)  
0.388 (9.86)  
0.010 (0.26)  
0.150 (3.80)  
0.110 (2.80)  
0.110 (2.79)  
0.090 (2.29)  
0.300 (7.62)  
typ  
Lead Coplanarity 0.004 (0.10) MAX  
0.024 (0.60)  
0.016 (0.40)  
0.110 (2.79)  
0.090 (2.29)  
0.4” Lead Spacing  
0.200 (5.10)  
Footprint Dimensions (Surface Mount)  
Footprint Dimensions  
0.312 (7.92)  
0.288 (7.32)  
(Surface Mount)  
1.5  
0.157 (4.00)  
0.161 (4.10)  
0.276 (7.00)  
0.236 (6.00)  
0.118 (3.00)  
1.3  
0.291 (7.40)  
0.252 (6.40)  
0.130 (3.30)  
0.091 (2.30)  
9
0.110 (2.80)  
0.011 (1.80)  
0.150 (3.80)  
0.110 (2.80)  
0.010 (0.26)  
0.110 (2.79)  
0.090 (2.29)  
0.024 (0.60)  
0.016 (0.40)  
0.42 (10.66)  
0.38 (9.66)  
2.54  
Note:  
All dimensions are in inches (millimeters)  
7
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Ordering Information  
Part Number Example  
Description  
H11AA814S  
Surface Mount Lead Bend  
H11AA814SD  
H11AA814W  
H11AA814300  
H11AA814300W  
H11AA8143S  
H11AA8143SD  
Surface Mount; Tape and reel  
0.4" Lead Spacing  
VDE Approved  
VDE Approved, 0.4" Lead Spacing  
VDE Approved, Surface Mount  
VDE Approved, Surface Mount, Tape & Reel  
*To specify the new construction version which needs 260°C max reflow peak temperature rating: add “NF098” to the  
end of the part number. The non-NF098 version is rated for 260°C peak reflow temperature only for parts marked with  
date code 0550 and later.  
Marking Information  
4
5
6
V X ZZ Y  
814  
3
2
1
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One digit year code  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
8
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Carrier Tape Specifications  
P
P
0
2
Ø1.55 0.05  
1.75 0.1  
F
W
B0  
A0  
P
1
0.3 0.05  
K0  
Note:  
All dimensions are in millimeters  
Description  
Tape wide  
Symbol  
Dimensions in mm (inches)  
W
16 0.3 (.63)  
Pitch of sprocket holes  
Distance of compartment  
P
4
0.1 (.15)  
7.5 0.1 (.295)  
0.1 (.079)  
0
F
P
2
2
Distance of compartment to compartment  
Compartment  
P
12 0.1 (.472)  
10.45 0.1 (.411)  
5.30 0.1 (.209)  
4.25 0.1 (.167)  
1
A0  
B0  
K0  
9
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
Lead Free Recommended IR Reflow Condition  
Tp  
Tsmax  
Tsmin  
Ramp-down  
25°C  
Soldering zon  
ts (Preheat)  
Time (sec)  
Profile Feature  
Pb-Sn solder assembly  
Lead Free assembly  
Preheat condition  
(Tsmin-Tsmax / ts)  
100°C ~ 150°C  
60 ~ 120 sec  
150°C ~ 200°C  
60 ~120 sec  
Melt soldering zone  
183°C  
217°C  
60 ~ 120 sec  
30 ~ 90 sec  
Peak temperature (Tp)  
Ramp-down rate  
240 +0/-5°C  
260 +0/-5°C  
6°C/sec max.  
6°C/sec max.  
Recommended Wave Soldering condition  
Profile Feature  
For all solder assembly  
Peak temperature (Tp)  
Max 260°C for 10 sec  
10  
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
®
ACEx™  
FACT Quiet Series™  
GlobalOptoisolator™  
GTO™  
OCX™  
OCXPro™  
OPTOLOGIC  
OPTOPLANAR™  
PACMAN™  
POP™  
Power247™  
PowerEdge™  
PowerSaver™  
SILENT SWITCHER  
SMART START™  
SPM™  
UniFET™  
UltraFET  
VCX™  
®
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
CROSSVOLT™  
DOME™  
®
HiSeC™  
Stealth™  
Wire™  
2
I C™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TCM™  
TinyBoost™  
TinyBuck™  
i-Lo™  
ImpliedDisconnect™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
MSXPro™  
EcoSPARK™  
2
E CMOS™  
®
EnSigna™  
FACT™  
PowerTrench  
®
QFET  
®
FAST  
QS™  
FASTr™  
FPS™  
FRFET™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TinyPWM™  
TinyPower™  
®
TinyLogic  
TINYOPTO™  
TruTranslation™  
UHC™  
Across the board. Around the world.™  
The Power Franchise  
®
ScalarPump™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE  
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER  
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S  
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I20  
11  
www.fairchildsemi.com  
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8  

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SI9136_11

 Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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