H11D4S [FAIRCHILD]

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS; 高压光电晶体管光耦合器
H11D4S
型号: H11D4S
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
高压光电晶体管光耦合器

晶体 光电 晶体管 光电晶体管 高压
文件: 总8页 (文件大小:381K)
中文:  中文翻译
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HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1  
H11D2  
H11D3  
H11D4  
4N38  
DESCRIPTION  
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting  
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage  
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.  
FEATURES  
• High Voltage  
- H11D1, H11D2, BVCER = 300 V  
- H11D3, H11D4, BVCER = 200 V  
• High isolation voltage  
- 5300 VAC RMS - 1 minute  
- 7500 VAC PEAK - 1 minute  
• Underwriters Laboratory (UL) recognized File# E90700  
ANODE  
CATHODE  
N/C  
1
6
BASE  
2
3
5
4
COLLECTOR  
EMITTER  
APPLICATIONS  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Appliance sensor systems  
Industrial controls  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Units  
TOTAL DEVICE  
TSTG  
-55 to +150  
°C  
Storage Temperature  
Operating Temperature  
Lead Solder Temperature  
Total Device Power Dissipation @ TA = 25°C  
Derate above 25°C  
TOPR  
TSOL  
-55 to +100  
260 for 10 sec  
260  
°C  
°C  
mW  
PD  
IF  
3.5  
mW/°C  
EMITTER  
80  
mA  
*Forward DC Current  
*Reverse Input Voltage  
*Forward Current - Peak (1µs pulse, 300pps)  
*LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
VR  
6.0  
3.0  
V
A
IF(pk)  
150  
1.41  
mW  
mW/°C  
PD  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
ABSOLUTE MAXIMUM RATINGS (Cont.)  
Parameter  
Symbol  
Value  
Units  
mW  
DETECTOR  
300  
*Power Dissipation @ TA = 25°C  
Derate linearly above 25°C  
PD  
4.0  
300  
200  
80  
mW/°C  
H11D1 - H11D2  
H11D3 - H11D4  
4N38  
*Collector to Emitter Voltage  
*Collector Base Voltage  
VCER  
H11D1 - H11D2  
H11D3 - H11D4  
4N38  
300  
200  
80  
V
VCBO  
H11D1 - H11D2  
H11D3 - H11D4  
*Emitter to Collector Voltage  
Collector Current (Continuous)  
VECO  
7
100  
mA  
ELECTRICAL CHARACTERISTICS (T = 25 Unless otherwise specified.)  
°C  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Characteristic  
EMITTER  
Test Conditions Symbol  
Device  
Min  
Typ**  
Max  
Unit  
(IF = 10 mA)  
VF  
ALL  
1.15  
1.5  
V
*Forward Voltage  
Forward Voltage Temp.  
Coefficient  
!VF  
!TA  
BVR  
ALL  
-1.8  
mV/°C  
Reverse Breakdown Voltage  
(IR = 10 µA)  
(VF = 0 V, f = 1 MHz)  
(VF = 1 V, f = 1 MHz)  
(VR = 6 V)  
ALL  
ALL  
6
25  
50  
V
pF  
pF  
µA  
Junction Capacitance  
CJ  
IR  
ALL  
65  
*Reverse Leakage Current  
DETECTOR  
ALL  
0.05  
10  
(RBE = 1 M")  
H11D1/2  
H11D3/4  
4N38  
300  
200  
80  
BVCER  
BVCEO  
*Breakdown Voltage  
Collector to Emitter  
(IC = 1.0 mA, IF = 0)  
(No RBE) (IC = 1.0 mA)  
H11D1/2  
H11D3/4  
4N38  
300  
200  
80  
V
*Collector to Base  
(IC = 100 µA, IF = 0)  
BVCBO  
Emitter to Base  
BVEBO  
BVECO  
4N38  
7
(IE = 100 µA , IF = 0)  
Emitter to Collector  
ALL  
7
10  
(VCE = 200 V, IF = 0, TA = 25°C)  
(VCE = 200 V, IF = 0, TA = 100°C)  
(VCE = 100 V, IF = 0, TA = 25°C)  
(VCE = 100 V, IF = 0, TA = 100°C)  
100  
250  
100  
250  
50  
nA  
µA  
nA  
µA  
nA  
H11D1/2  
*Leakage Current  
Collector to Emitter  
(RBE = 1 M")  
ICER  
H11D3/4  
4N38  
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)  
ICEO  
Notes  
* Parameters meet or exceed JEDEC registered data (for 4N38 only)  
** All typical values at TA = 25°C  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
TRANSFER CHARACTERISTICS  
DC Characteristic  
Test Conditions Symbol  
Device  
H11D1  
H11D2  
H11D3  
H11D4  
4N38  
Min  
Typ**  
Max  
Unit  
EMITTER  
(IF = 10 mA, VCE = 10 V)  
2 (20)  
Current Transfer Ratio  
Collector to Emitter  
(RBE = 1 M")  
CTR  
mA (%)  
1 (10)  
2 (20)  
(IF = 10 mA, VCE = 10 V)  
(IF = 10 mA, IC = 0.5 mA)  
H11D1/2/3/4  
4N38  
0.1  
0.40  
1.0  
*Saturation Voltage  
(RBE = 1 M") VCE (SAT)  
(IF = 20 mA, IC = 4 mA)  
V
TRANSFER CHARACTERISTICS  
Characteristic  
Test Conditions Symbol Device  
Min  
Typ**  
Max  
Unit  
SWITCHING TIMES  
(VCE =10 V, ICE = 2 mA)  
(RL = 100 ")  
ton  
toff  
ALL  
ALL  
5
5
Non-Saturated Turn-on Time  
Turn-off Time  
µs  
ISOLATION CHARACTERISTICS  
Characteristic  
Test Conditions Symbol Device  
Min  
5300  
7500  
1011  
Typ**  
Max  
Unit  
(VACRMS)  
(VACPEAK)  
"
Isolation Voltage  
(II-O #$1 µA, 1 min.)  
VISO  
ALL  
Isolation Resistance  
Isolation Capacitance  
(VI-O = 500 VDC)  
(f = 1 MHz)  
RISO  
CISO  
ALL  
ALL  
0.5  
pF  
Notes  
* Parameters meet or exceed JEDEC registered data (for 4N38 only)  
** All typical values at TA = 25°C  
Fig.1 LED Forward Voltage vs. Forward Current  
Fig.2 Normalized Output Characteristics  
1.8  
Normalized to:  
V
= 10 V  
= 10 mA  
6
= 10 Ω  
BE  
CE  
1.7  
I
F
10  
R
T
= 25˚C  
1.6  
A
I
I
= 50 mA  
= 10 mA  
F
F
1.5  
1
1.4  
T
T
= 55˚C  
= 25˚C  
A
A
I
= 5 mA  
F
1.3  
1.2  
1.1  
1.0  
0.1  
0.01  
T
= 100˚C  
A
0.1  
1
10  
100  
1
10  
100  
I
- LED FORWARDCURRENT (mA)  
V
- COLLECTOR VOLTAGE (V)  
CE  
F
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
Fig.3 Normalized Output Current vs. LED Input Current  
Fig.4 Normalized Output Current vs.Temperature  
10  
Normalized to:  
Normalized to:  
= 10 V  
V
CE  
= 10 V  
V
CE  
I
R
= 10 mA  
6
= 10 Ω  
F
I
R
= 10 mA  
6
= 10 Ω  
F
BE  
BE  
I
I
= 20 mA  
= 10 mA  
F
F
T
= 25˚C  
A
T
= 25˚C  
A
1
1
I
= 5 mA  
F
0.1  
0.01  
0.1  
-60  
1
10  
-40  
-20  
0
20  
40  
60  
80  
100  
I
- LED INPUT CURRENT (mA)  
T - AMBIENT TEMPERATURE (˚C)  
A
F
Fig.5 Normalized Dark Current vs. Ambient Temperature  
Normalized Collector-Base Current vs.Temperature  
10  
9
8
7
6
5
4
3
2
1
0
Normalized to:  
Normalized to:  
V
= 100 V  
V
I
R
= 10 V  
10000  
1000  
100  
10  
CE  
CE  
6
R
T
= 10  
= 10 mA  
BE  
F
6
= 25˚C  
= 10  
A
I
= 50 mA  
BE  
F
T
= 25˚C  
A
V
CE  
= 300 V  
V
CE  
= 100 V  
V
CE  
= 50 V  
I
I
= 10 mA  
F
F
1
= 5 mA  
-40  
0.1  
10  
20  
30  
T
40  
50  
60  
70  
80  
90  
100  
110  
-60  
-20  
T
0
20  
40  
60  
80  
100  
- AMBIENT TEMPERATURE (˚C)  
- AMBIENT TEMPERATURE (˚C)  
A
A
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
Package Dimensions (Through Hole)  
Package Dimensions (Surface Mount)  
0.350 (8.89)  
0.330 (8.38)  
3
2
1
PIN 1  
ID.  
PIN 1  
ID.  
3
2
1
0.270 (6.86)  
0.240 (6.10)  
0.270 (6.86)  
0.240 (6.10)  
4
5
6
0.350 (8.89)  
0.330 (8.38)  
4
5
6
0.070 (1.78)  
0.045 (1.14)  
0.300 (7.62)  
TYP  
0.070 (1.78)  
0.045 (1.14)  
0.200 (5.08)  
0.135 (3.43)  
0.200 (5.08)  
0.165 (4.18)  
0.016 (0.41)  
0.008 (0.20)  
0.020 (0.51)  
MIN  
0.154 (3.90)  
0.100 (2.54)  
0.020 (0.51)  
MIN  
0.016 (0.40) MIN  
0.016 (0.40)  
0.008 (0.20)  
0.022 (0.56)  
0.016 (0.41)  
0.100 (2.54)  
TYP  
0.315 (8.00)  
MIN  
0.300 (7.62)  
TYP  
0.022 (0.56)  
0.016 (0.41)  
0° to 15°  
0.405 (10.30)  
MAX  
0.100 (2.54)  
TYP  
Lead Coplanarity : 0.004 (0.10) MAX  
Package Dimensions (0.4”Lead Spacing)  
Recommended Pad Layout for  
Surface Mount Leadform  
3
2
1
PIN 1  
ID.  
0.270 (6.86)  
0.240 (6.10)  
0.070 (1.78)  
0.060 (1.52)  
4
5
6
0.350 (8.89)  
0.330 (8.38)  
0.415 (10.54)  
0.100 (2.54)  
0.070 (1.78)  
0.045 (1.14)  
0.295 (7.49)  
0.030 (0.76)  
0.004 (0.10)  
MIN  
0.200 (5.08)  
0.135 (3.43)  
0.154 (3.90)  
0.100 (2.54)  
0.016 (0.40)  
0.008 (0.20)  
0° to 15°  
0.022 (0.56)  
0.016 (0.41)  
0.400 (10.16)  
TYP  
0.100 (2.54) TYP  
NOTE  
All dimensions are in inches (millimeters)  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
ORDERING INFORMATION  
Order Entry Identifier  
Option  
Description  
S
.S  
Surface Mount Lead Bend  
Surface Mount; Tape and reel  
0.4Lead Spacing  
SD  
W
.SD  
.W  
300  
300W  
3S  
.300  
.300W  
.3S  
VDE 0884  
VDE 0884, 0.4Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape & Reel  
3SD  
.3SD  
QT Carrier Tape Specifications (“D” Taping Orientation)  
12.0 ± 0.1  
4.0 ± 0.1  
4.85 ± 0.20  
Ø1.55 ± 0.05  
0.30 ± 0.05  
4.0 ± 0.1  
1.75 ± 0.10  
7.5 ± 0.1  
16.0 ± 0.3  
13.2 ± 0.2  
9.55 ± 0.20  
Ø1.6 ± 0.1  
10.30 ± 0.20  
User Direction of Feed  
0.1 MAX  
NOTE  
All dimensions are in millimeters  
8/9/00  
200046A  
MARKING INFORMATION  
1
2
6
H11D1  
V XX YY K  
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
Two digit year code, e.g., ‘03’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
Reflow Profile (Black Package, No Suffix)  
300  
250  
215°C, 1030 s  
225 C peak  
200  
150  
Time above 183°C, 60150 sec  
Ramp up = 3C/sec  
100  
50  
0
Peak reflow temperature: 225°C (package surface temperature)  
Time of temperature higher than 183°C for 60150 seconds  
One time soldering reflow is recommended  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
Time (Minute)  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
Power247™  
PowerEdge™  
PowerSaver™  
Stealth™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
FAST  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
PowerTrench  
QFET  
QS™  
SyncFET™  
QT Optoelectronics™ TinyLogic  
HiSeC™  
I2C™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TINYOPTO™  
MSXPro™  
OCX™  
TruTranslation™  
UHC™  
i-Lo™  
ImpliedDisconnect™  
OCXPro™  
OPTOLOGIC  
FACT Quiet Series™  
UltraFET  
SILENT SWITCHER VCX™  
SMART START™  
SPM™  
OPTOPLANAR™  
PACMAN™  
POP™  
Across the board. Around the world.™  
The Power Franchise  
ProgrammableActive Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY  
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY  
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT  
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I13  

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