H11F2W [FAIRCHILD]
FET Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6;型号: | H11F2W |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | FET Output Optocoupler, 1-Element, 5300V Isolation, LEAD FREE, DIP-6 输出元件 光电 |
文件: | 总10页 (文件大小:553K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
PACKAGE
SCHEMATIC
OUTPUT
TERM.
1
2
ANODE
6
5
6
6
CATHODE
1
1
1
OUTPUT
TERM.
4
3
6
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
•
•
•
•
≤ 100Ω to ≥ 300 MΩ
≥ 99.9% linearity
≤ 15 pF shunt capacitance
≥ 100 GΩ I/O isolation resistance
As an analog switch
•
•
•
•
•
•
Extremely low offset voltage
60 V signal capability
No charge injection or latch-up
pk-pk
t
, t ≤ 15 µS
on off
UL recognized (File #E90700)
VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
•
•
•
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching
As an analog switch –
•
•
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
EMITTER
T
All
All
All
-55 to +150
-55 to +100
°C
°C
°C
STG
T
OPR
T
260 for 10 sec
SOL
Continuous Forward Current
Reverse Voltage
I
All
All
All
60
5
mA
V
F
V
R
Forward Current - Peak (10 µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
I
1
A
F(pk)
100
1.33
mW
mW/°C
P
All
D
DETECTOR
Detector Power Dissipation @ 25°C
Derate linearly from 25°C
300
4.0
30
mW
mW/°C
V
P
All
D
H11F1, H11F2
H11F3
Breakdown Voltage (either polarity)
BV
4-6
15
V
Continuous Detector Current (either polarity)
I
All
100
mA
4-6
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified.)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Device
Min
Typ*
Max Unit
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
I = 16 mA
V
All
All
All
1.3
50
1.75
10
V
F
F
V = 5 V
I
µA
pF
R
R
V = 0 V, f = 1.0 MHz
C
J
OUTPUT DETECTOR
H11F1, H11F2
30
15
Breakdown Voltage
Either Polarity
I
= 10µA, I = 0
BV
4-6
V
4-6
F
H11F3
All
V
= 15 V, I = 0
50
50
nA
µA
4-6
F
Off-State Dark Current
I
4-6
V
= 15 V, I = 0, T = 100°C
All
4-6
F
A
Off-State Resistance
Capacitance
V
= 15 V, I = 0
R
C
All
300
MΩ
pF
4-6
F
4-6
V
= 15 V, I = 0, f = 1MHz
All
15
4-6
F
4-6
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ISOLATION CHARACTERISTICS
Parameter
Test Conditions
f = 60Hz, t = 1 min.
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage
Isolation Resistance
V
5300
Vac (rms)
ISO
11
V
= 500 VDC
R
C
10
Ω
I-O
ISO
ISO
Isolation Capacitance
V
= 0, f = 1.0 MHz
2
pF
I-O
TRANSFER CHARACTERISTICS (T = 25°C Unless otherwise specified.)
A
DC Characteristics
Test Conditions
Symbol
Device
Min
Typ*
Max
Units
H11F1
H11F2
H11F3
H11F1
H11F2
H11F3
200
330
470
200
330
470
On-State Resistance
I = 16 mA, I = 100 µA
R
Ω
F
4-6
4-6
On-State Resistance
I = 16 mA, I = 100 µA
R
Ω
F
6-4
6-4
Resistance, non-linearity
and assymetry
I = 16mA, I = 25 µA RMS,
F 4-6
All
0.1
%
f = 1kHz
AC Characteristics
Test Conditions
Symbol
Device
Min
Typ*
Max
Units
Turn-On Time
Turn-Off Time
R
R
= 50Ω, I = 16mA, V = 5V
t
All
All
25
25
µS
µS
L
F
4-6
on
= 50Ω, I = 16mA, V = 5V
t
L
F
4-6
off
© 2003 Fairchild Semiconductor Corporation
Page 3 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Figure 1. Resistance vs. Input Current
Figure 2. Output Characteristics
800
I
F
= 18mA
= 14mA
= 10mA
I
600
400
200
0
F
I
10
F
I
= 6mA
F
I
= 2mA
F
I
= 2mA
F
I
I
I
= 6mA
F
F
F
-200
-400
-600
-800
1
= 10mA
= 14mA
I
= 18mA
F
Normalized to:
I
I
= 16 mA
F
= 5 µA RMS
46
0.1
-0.2
-0.1
0.0
0.1
0.2
1
10
100
V
- OUTPUT VOLTAGE (V)
46
I
- INPUT CURRENT - mA
F
Figure 3. LED Forward Voltage vs. Forward Current
Figure 4. Off-state Current vs. Ambient Temperature
10000
2.0
1.8
1.6
1.4
1.2
NORMALIZED TO:
= 15V
V
46
= 0mA
I
F
T
A
= 25°C
1000
100
10
T
= -55°C
= 25°C
A
T
A
1.0
0.8
T
A
= 100°C
1
0.1
1
10
100
0
20
40
60
80
100
T
- AMBIENT TEMPERATURE (°C)
A
I
- LED FORWARD CURRENT - mA
F
Figure 5. Resistance vs. Temperature
Figure 6. Region of Linear Resistance
100
80
100
80
3
2
NORMALIZED TO
IF = 16mA
I4-6 = 25µA RMS
TA = 25˚C
MAXIMUM
RMS
VOLTAGE
60
40
60
40
20
20
Observed
Range
10
8
10
8
1
6
6
MAXIMUM
RMS
CURRENT
0.8
4
4
0.6
2
1
2
0.4
-50
100
1000
10K
100K
-25
0
25
50
75
100
T
A
- AMBIENT TEMPERATURE - °C
r(on) RESISTANCE - Ω
© 2003 Fairchild Semiconductor Corporation
Page 4 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Figure 7. Resistive non-linearity vs. D.C. Bias
5
4
3
2
I
= 10 µA RMS
4-6
r(on) = 200 Ω
1
0
1
50
100
150
200
250
300
350
V
4-6
- D.C. BIAS VOLTAGE - mA
© 2003 Fairchild Semiconductor Corporation
Page 5 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
TYPICAL APPLICATIONS
AS A VARIABLE RESISTOR
AS AN ANALOG SIGNAL SWITCH
ISOLATED SAMPLE AND HOLD CIRCUIT
ISOLATED VARIABLE ATTENUATORS
500K
+
VIN
-
VOUT
VOUT
VIN
VIN
50Ω
VIN
IF
VOUT
H11F1
H11F1
H11F1
C
IF
VOUT
IF
LOW FREQUENCY
t
IF
HIGH FREQUENCY
DYNAMIC RANGE ≈ 70db
FOR 0 ≤ IF ≤ 30mA
DYNAMIC RANGE ≈ 50db
FOR 0 ≤ IF ≤ 30mA
@10KHz
@1MHz
Accuracy and range are improved over conventional FET
switches because the H11F has no charge injection from the
control signal. The H11F also provides switching of either
polarity input signal up to 30V magnitude.
Distortion free attenuation of low level A.C. signals is accom-
plished by varying the IRED current, I Note the wide dynamic
F
range and absence of coupling capacitors; D.C. level shifting or
parasitic feedback to the controlling function.
AUTOMATIC GAIN CONTROL
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION
CALL V1
H11F1
CALL
Vn
DATA
VOUT
VIN
ACQUISITION
V1
V2
H74A1
+
-
MSB
LSB
MSB
LSB
A/D
CONVERTER
PROCESS
CONTROL
LOGIC
Vn
H74A1
H11F1
IF
SYSTEM
500K
H11F1
AGC
SIGNAL
This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.
The optical isolation, linearity and low offset voltage of the
H11F allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.
ACTIVE FILTER FINE TUNING/BAND SWITCHING
TEST EQUIPMENT - KELVIN CONTACT POLARITY
IF1
IF2
H11F1
H11F1
H11F1
H11F1
IF
IF
A
C
ITEST
DEVICE
UNDER
TEST
I
F TO
A1
A2
A & B FOR
POLARITY 1
A3
PARAMETER
SENSING
BOARD
C & D FOR
POLARITY 2
B
D
IF
IF
H11F1
H11F1
IF1 ADJUSTS f1, IF2 ADJUSTS f2
In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11F eliminates these troubles while providing
faster switching.
The linearity of resistance and the low offset voltage of the
H11F allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1 IRED’s
controlling the filter’s transfer characteristic.
© 2003 Fairchild Semiconductor Corporation
Page 6 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
PIN 1
ID.
PIN 1
ID.
3
1
0.270 (6.86)
0.240 (6.10)
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
6
0.070 (1.78)
0.045 (1.14)
0.300 (7.62)
TYP
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.200 (5.08)
0.165 (4.18)
0.016 (0.41)
0.008 (0.20)
0.020 (0.51)
MIN
0.020 (0.51)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40) MIN
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0.315 (8.00)
MIN
0.016 (0.40)
0.008 (0.20)
0.405 (10.30)
MAX
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0° to 15°
Lead Coplanarity : 0.004 (0.10) MAX
0.100 (2.54)
TYP
Package Dimensions (0.4” Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.270 (6.86)
0.240 (6.10)
0.070 (1.78)
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0.004 (0.10)
MIN
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.400 (10.16)
TYP
0.100 (2.54) TYP
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 7 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ORDERING INFORMATION
Option
Order Entry Identifier
Description
S
.S
.SD
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
SD
W
.W
300
.300
.300W
.3S
VDE 0884
300W
3S
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
3SD
.3SD
MARKING INFORMATION
1
2
H11F1
6
V XX YY K
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
Two digit year code, e.g., ‘03’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
© 2003 Fairchild Semiconductor Corporation
Page 8 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Carrier Tape Specifications
12.0 0.1
4.85 0.20
4.0 0.1
Ø1.55 0.05
0.30 0.05
4.0 0.1
1.75 0.10
7.5 0.1
16.0 0.3
13.2 0.2
9.55 0.20
Ø1.6 0.1
10.30 0.20
0.1 MAX
User Direction of Feed
NOTE
All dimensions are in inches (millimeters)
Tape and reel quantity is 1,000 units per reel
Reflow Profile (Black Package, No Suffix)
300
250
215°C, 10–30 s
225 C peak
200
150
Time above 183°C, 60–150 sec
Ramp up = 3C/sec
100
50
0
• Peak reflow temperature: 225°C (package surface temperature)
• Time of temperature higher than 183°C for 60–150 seconds
• One time soldering reflow is recommended
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
© 2003 Fairchild Semiconductor Corporation
Page 9 of 10
3/19/03
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2003 Fairchild Semiconductor Corporation
Page 10 of 10
3/19/03
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