HGT1S10N120BNS [FAIRCHILD]

35A, 1200V, NPT Series N-Channel IGBT; 35A , 1200V ,不扩散核武器条约系列N沟道IGBT
HGT1S10N120BNS
元器件型号: HGT1S10N120BNS
生产厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述和应用:

35A, 1200V, NPT Series N-Channel IGBT
35A , 1200V ,不扩散核武器条约系列N沟道IGBT

晶体 晶体管 电动机控制 瞄准线 双极性晶体管 栅
PDF文件: 总8页 (文件大小:212K)
下载文档:  下载PDF数据表文档文件
型号参数:HGT1S10N120BNS参数

HGT1S10N120BNS9A

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB

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22 ETC

HGT1S10N120BNST

35A, 1200V, NPT Series N-Channel IGBT

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47 FAIRCHILD

HGT1S11N120CNS

43A, 1200V, NPT Series N-Channel IGBT

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31 FAIRCHILD

HGT1S11N120CNS

43A, 1200V, NPT Series N-Channel IGBT

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23 INTERSIL

HGT1S11N120CNS

43A, 1200V, N-CHANNEL IGBT, TO-263AB

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0 RENESAS

HGT1S11N120CNS9A

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB

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16 FAIRCHILD

HGT1S12N60A4DS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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45 FAIRCHILD

HGT1S12N60A4DS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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41 INTERSIL

HGT1S12N60A4DS

54A, 600V, N-CHANNEL IGBT, TO-263AB

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0 ROCHESTER

HGT1S12N60A4DS_NL

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE PACKAGE-3

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0 FAIRCHILD

HGT1S12N60A4DS9A

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB

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15 INTERSIL

HGT1S12N60A4DST

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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0 FAIRCHILD

HGT1S12N60A4S

600V, SMPS Series N-Channel IGBT

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25 INTERSIL

HGT1S12N60A4S9A

600V, SMPS Series N-Channel IGBTs

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25 FAIRCHILD

HGT1S12N60B3DS

27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

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26 FAIRCHILD