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HGT1S12N60A4DST [FAIRCHILD]

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB;
HGT1S12N60A4DST
型号: HGT1S12N60A4DST
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB

栅 瞄准线 功率控制 晶体管
文件: 总12页 (文件大小:228K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

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