HGT1S12N60C3DRS9A [RENESAS]
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB;
| 型号： | HGT1S12N60C3DRS9A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB 电动机控制 栅 瞄准线 开关 晶体管 |
| 文件： | 总7页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG12N60C3DR,
HGTP12N60C3DR, HGT1S12N60C3DRS
Data Sheet
June 2000
File Number 4467.1
24A, 600V, Rugged, UFS Series N-Channel
IGBTs with Anti-Parallel Ultrafast Diodes
Features
o
• 24A, 600V at T = 25 C
C
[ /Title
(HGT
G12N6
0C3D
R,
HGTP
12N60
C3DR,
HGT1
S12N6
0C3D
RS)
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
• 600V Switching SOA Capability
o
• Typical Fall Time at T = 150 C . . . . . . . . . . . . . . . . 250ns
J
o
• Short Circuit Rating at T = 150 C. . . . . . . . . . . . . . .10µs
J
• Low Conduction Loss
• Ultrafast Anti-Parallel Diode
• Related Literature
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 17).
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
The data was obtained with the diode at the same T as the
Packaging
J
IGBT under test. The diode used in anti-parallel with the
IGBT is development type TA49213. The IGBT is
development type TA49118.
JEDEC TO-220AB (ALTERNATE VERSION)
/Sub-
ject
E
C
G
(24A,
600V,
Rug-
ged,
UFS
Series
N-
Formerly development type TA49124.
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
HGTP12N60C3DR
HGT1S12N60C3DRS
HGTG12N60C3DR
PACKAGE
BRAND
12N60CDR
TO-220AB
TO-263AB
TO-247
12N60CDR
JEDEC TO-247AB
12N60C3DR
Chan-
nel
IGBT
with
Anti-
Paral-
lel
E
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, ie.,
HGT1S12N60C3DRS9A.
G
Symbol
COLLECTOR
(BOTTOM SIDE
MEDAL)
C
Ultrafa
st
Diode)
/Autho
r ()
/Key-
words
(24A,
600V,
Rug-
ged,
G
JEDEC TO-263AB
COLLECTOR
E
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
UFS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
2-1
HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
24
12
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
48
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
o
±30
Switching Safe Operating Area at T = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C
48A at 600V
104
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
10
µs
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 440V, T = 150 C, R = 25Ω.
J G
CE(PK)
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
600
-
-
CES
C
GE
I
V
= BV
= BV
-
-
250
1.0
2.2
2.5
7.5
±100
-
µA
mA
V
CES
CE
CE
CES
o
V
T
= 150 C
-
CES,
C
Collector to Emitter Saturation Voltage
V
I
I
I
= I
, V
= 15V
= 15V, T = 150 C
-
1.9
2.0
6.1
-
CE(SAT)
C
C110 GE
o
= I , V
-
V
C
C
C110 GE
= 250µA, V
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA (See Figure 2)
V
= V
CE GE
4.5
-
V
GE(TH)
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C, R = 25Ω, V
= 15V
48
-
J
G
GE
V
= 600V, L = 100µH
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
I
= I
= I
= I
, V
= 0.5 BV
CES
-
-
-
-
-
-
-
-
9.7
50
-
V
GEP
C
C
C
C110 CE
Q
, V
C110 CE
= 0.5 BV , V
ES GE
= 15V
= 20V
70
90
-
nC
nC
ns
ns
ns
ns
µJ
µJ
g(ON)
, V
= 0.5 BV , V
ES GE
71
C110 CE
o
Current Turn-On Delay Time
Current Rise Time
t
T = 25 C
37
d(ON)I
J
I
= I
CE
C110
= 0.8 BV
t
37
-
rI
V
V
R
CE(PK)
= 15V
CES
Current Turn-Off Delay Time
Current Fall Time
t
GE
120
110
400
340
260
160
450
700
d(OFF)I
= 25Ω
G
t
fI
L = 1mH
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
E
ON
Diode Used In Test Circuit
RURP1560 at 25 C
o
E
OFF
2-2
HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
36
38
290
250
2
MAX
-
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C
-
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
CE
C110
= 0.8 BV
t
-
ns
rI
d(OFF)I
V
CE(PK)
= 15V
CES
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
500
400
-
ns
R
= 25Ω
G
t
ns
fI
L = 1mH
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Diode Forward Voltage
dV /dt
V/ns
V/ns
mJ
mJ
V
CE
Diode Used in Test Circuit
RURP1560 at 150 C
o
dV /dt
10
0.83
1.20
1.3
-
-
CE
E
0.91
1.95
1.6
35
ON
E
OFF
V
I
I
I
= 12A
EC
EC
EC
EC
Diode Reverse Recovery Time
t
= 1A, dI /dt = 200A/µs
EC
ns
rr
= 12A, dI /dt = 200A/µs
EC
-
60
ns
o
Thermal Resistance Junction to Case
NOTES:
R
IGBT
-
1.2
1.75
C/W
θJC
o
Diode
-
C/W
3. dV /dt depends on the diode used and the temperature of the diode.
CE
4. Turn-On Energy Loss (E ) includes losses due to the diode recovery and is defined as the integral of the instantaneous power loss starting at
ON
the leading edge of the input pulse and ending at the point where the collector voltage equals V (ON). This value of E
was obtained with
CE
ON
o
o
a RURP1560 diode at T = 150 C. A different diode or temperature will result in a different E . For example with diode at T = 25 C, E
is
J
ON
J
ON
o
about one half the value of E
with diode at T = 150 C.
J
ON
5. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
25
20
15
10
5
50
40
30
20
10
0
V
= 15V
GE
o
T
= 150 C, R = 25Ω, V
= 15V, L = 100µH
J
G
GE
0
25
0
200
400
600
150
50
75
100
125
o
T
, CASE TEMPERATURE ( C)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE(PK)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. SWITCHING SAFE OPERATING AREAS
2-3
HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS
Typical Performance Curves (Continued)
200
100
70
60
50
40
30
20
10
0
o
o
T
= 150 C, R = 25Ω, L = 1mH, V
= 480V
CE(PK)
T
T
= -55 C
PULSE DURATION = 250µs
J
G
C
DUTY CYCLE <0.5%
V
= 15V
GE
V
= 15V
o
GE
= 25 C
C
o
T
= 150 C
C
o
= 75 C
T
C
o
T
= 110 C
C
10
f
f
P
= 0.05/(t
d(OFF)I
+ t )
d(ON)I
MAX1
MAX2
= (P - P )/(E
+ E
)
D
C
ON
OFF
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
D
C
P
o
R
= 1.2 C/W
6
θJC
1
4
8
10
20
30
0
1
2
3
4
5
6
7
8
9
10
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. COLLECTOR TO EMITTER ON STATE VOLTAGE
4.0
o
4.5
o
= 150 C, R = 25Ω, L = 1mH, V = 480V
CE(PK)
T
= 150 C, R = 25Ω, L = 1mH, V
= 480V
J
G
CE(PK)
T
J
G
V
= 15V
GE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
= 15V
GE
8
12
16
20
24
28
32
36
4
4
8
12
16
20
24
28
32
36
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 5. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 6. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
46
150
o
o
= 150 C, R = 25Ω, L = 1mH, V = 480V
CE(PK)
T
= 150 C, R = 25Ω, L = 1mH, V
= 480V
CE(PK)
T
J
G
J
G
V
= 15V
V
= 15V
GE
GE
44
42
40
38
36
34
125
100
75
50
25
0
4
8
12
16
20
24
28
32
36
4
8
12
16
20
24
28
32
36
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
2-4
HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS
Typical Performance Curves (Continued)
325
300
275
250
225
200
175
375
350
325
300
275
250
225
200
o
o
T
= 150 C, R = 25Ω, L = 1mH, V
= 480V
CE(PK)
T
= 150 C, R = 25Ω, L = 1mH, V
= 480V
CE(PK)
J
G
J
G
V
= 15V
GE
V
= 15V
GE
4
8
12
16
20
24
28
32
36
4
8
12
16
20
24
28
32
36
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
16
o
70
I
= 1mA, R = 25Ω, T = 25 C
G(REF)
L
C
DUTY CYCLE <0.5%, V
= 10V
PULSE DURATION = 250µs
CE
14
12
60
50
40
30
20
10
0
V
= 600V
CE
o
T
= -55 C
C
10
8
V
= 200V
CE
o
T
= 25 C
C
V
= 400V
CE
6
o
4
T
= 150 C
C
2
0
6
7
8
9
10
11
12
13
14
15
0
10
20
30
40
50
Q , GATE CHARGE (nC)
V
, GATE TO EMITTER VOLTAGE (V)
g
GE
FIGURE 11. TRANSFER CHARACTERISTICS
FIGURE 12. GATE CHARGE WAVEFORMS
2.5
2.0
1.5
1.0
0.5
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
0
10
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
15
20
25
V
CE
FIGURE 13. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
2-5
HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS
Typical Performance Curves (Continued)
0
10
0.5
0.2
0.1
t
1
-1
10
P
0.05
D
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
SINGLE PULSE
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
-2
10
10
-5
-4
-3
10
-2
10
-1
10
0
1
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 14. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
60
10
60
o
= 25 C, dI /dt = 200A/µs
T
C
EC
50
40
30
20
10
0
o
150 C
o
o
-55 C
25 C
t
rr
t
a
t
b
1
0
0.5
1.0
1.5
2.0
2.5
1
2
5
10 12
I
, FORWARD CURRENT (A)
V
, FORWARD VOLTAGE (V)
EC
EC
FIGURE 15. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
FIGURE 16. RECOVERY TIME vs FORWARD CURRENT
Test Circuit and Waveforms
L = 1mH
90%
RURP1560
10%
V
GE
E
E
OFF
ON
V
CE
R
= 25Ω
G
90%
10%
d(OFF)I
+
-
I
CE
t
t
rI
t
V
= 480V
fI
DD
t
d(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
2-6
HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device (Figure
3) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I ) plots are possible using the information shown
CE
for a typical unit in Figures 4, 5, 6, 7 and 9. The operating
frequency plot (Figure 3) of a typical device shows f
or
whichever is smaller at each point. The information is
MAX1
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
).
d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
d(OFF)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
and t
are defined in Figure 18.
d(ON)I
JM d(OFF)
is important when controlling output ripple under a lightly
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
3. Tips of soldering irons should be grounded.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
4. Devices should never be inserted into or removed from
circuits with power on.
D
the conduction losses (P ) are approximated by
C
5. Gate Voltage Rating - Never exceed the gate-voltage
P
= (V
x I )/2.
CE
C
CE
rating of V
. Exceeding the rated V can result in
GEM
GE
permanent damage to the oxide layer in the gate region.
E
and E are defined in the switching waveforms shown
OFF
ON
in Figure 18. E
loss (I x V ) during turn-on and E
CE CE OFF
instantaneous power loss (I x V ) during turn-off. All tail
losses are included in the calculation for E
is the integral of the instantaneous power
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON
is the integral of the
CE CE
; i.e., the
OFF
collector current equals zero (I = 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
ECCOSORBD™ is a trademark Emerson and Cumming, Inc.
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