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元器件品牌
IRF331
[FAIRCHILD]
N-Channel Power MOSFETs, 5.5A, 350 V/400V; N沟道功率MOSFET ， 5.5A ， 350 V / 400V
元器件型号：
IRF331
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
N-Channel Power MOSFETs, 5.5A, 350 V/400V
N沟道功率MOSFET ， 5.5A ， 350 V / 400V
晶体 晶体管 开关 脉冲 局域网
PDF文件：
总6页 (文件大小：181K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF331参数
查看货源
IRF3315
Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
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156
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260
IRF
IRF3315L
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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36
ETC
IRF3315L
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
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34
IRF
IRF3315L
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
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23
IRF
IRF3315LPBF
HEXFET Power MOSFET
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35
IRF
IRF3315PBF
HEXFET Power MOSFET
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23
IRF
IRF3315PBF
HEXFET Power MOSFET
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34
IRF
IRF3315S
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
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141
IRF
IRF3315SL
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16
ETC
IRF3315SPBF
HEXFET Power MOSFET
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31
IRF
IRF3315STRL
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3
Warning
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0
IRF
IRF3315STRL
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3
Warning
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0
IRF
IRF3315STRR
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3
Warning
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156
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0
IRF
IRF3315STRRPBF
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Warning
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0
IRF
IRF331R
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
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23
ETC
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