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IRF543 [FAIRCHILD]

N-Channel Power MOSFETs, 27 A, 60-100V; N沟道功率MOSFET ， 27 A， 60-100V

IRF543


元器件型号：	IRF543
生产厂家：	FAIRCHILD SEMICONDUCTOR
描述和应用：	N-Channel Power MOSFETs, 27 A, 60-100V N沟道功率MOSFET ， 27 A， 60-100V 晶体晶体管功率场效应晶体管
PDF文件：	总5页 (文件大小：150K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF543参数

IRF543-001

Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF543FI

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 14A I(D) | TO-220AB

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16 ETC

IRF543R

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 25A I(D) | TO-220AB

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31 ETC

IRF550

Advanced Power MOSFET

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94 FAIRCHILD

IRF550

Advanced Power MOSFET

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156 FAIRCHILD

IRF550A

Advanced Power MOSFET

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113 FAIRCHILD

IRF550AJ69Z

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

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0 FAIRCHILD

IRF5800

Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

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244 IRF

IRF5800_03

Ultra Low On-Resistance, P-Channel MOSFET

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19 IRF

IRF5800PBF

HEXFET Power MOSFET

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41 IRF

IRF5800TRPBF

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

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0 IRF

IRF5801

Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A)

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119 IRF

IRF5801PBF

Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP, 6 PIN

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0 IRF

IRF5801PBF-1

Industry-standard pinout TSOP-6 Package

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0 IRF

IRF5801PBF-1_15

HEXFET Power MOSFET

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0 IRF

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