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元器件品牌
IRF633
[FAIRCHILD]
N-Channel Power MOSFETs, 12A, 150-200 V; N沟道功率MOSFET ， 12A ， 150至200 V
元器件型号：
IRF633
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
N-Channel Power MOSFETs, 12A, 150-200 V
N沟道功率MOSFET ， 12A ， 150至200 V
PDF文件：
总6页 (文件大小：181K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF633参数
查看货源
IRF633-002PBF
Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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IRF
IRF633-004PBF
Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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0
IRF
IRF633-006PBF
Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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0
IRF
IRF633R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | TO-220AB
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28
ETC
IRF634
Advanced Power MOSFET
Warning
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156
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916
FAIRCHILD
IRF634
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
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240
STMICROELECTR
IRF634
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
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156
IRF
IRF634
Advanced Power MOSFET
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100
FAIRCHILD
IRF634
N-channel mosfet transistor
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35
ISC
IRF634
Power MOSFET
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82
VISHAY
IRF634
N-channel mosfet transistor
Warning
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35
ISC
IRF634
8.1A, 250V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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3
ROCHESTER
IRF634
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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9
SAMSUNG
IRF634-004
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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0
VISHAY
IRF634-004PBF
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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0
VISHAY
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