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元器件品牌
IRFI550A
[FAIRCHILD]
Advanced Power MOSFET; 先进的功率MOSFET
元器件型号：
IRFI550A
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
Advanced Power MOSFET
先进的功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲
PDF文件：
总7页 (文件大小：268K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFI550A参数
查看货源
IRFI550ATU
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
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FAIRCHILD
IRFI610A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-262AA
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33
ETC
IRFI610ATU
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
FAIRCHILD
IRFI610B
200V N-Channel MOSFET
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156
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23
FAIRCHILD
IRFI610BTU_FP001
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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0
FAIRCHILD
IRFI614A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-262AA
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13
ETC
IRFI614ATU
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
FAIRCHILD
IRFI614B
250V N-Channel MOSFET
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156
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21
FAIRCHILD
IRFI614BTU
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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FAIRCHILD
IRFI614BTU_FP001
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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0
FAIRCHILD
IRFI614G
Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.1A)
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21
IRF
IRFI614G
Power MOSFET
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24
VISHAY
IRFI614G-002PBF
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
INFINEON
IRFI614G-004PBF
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
INFINEON
IRFI614G-005PBF
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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INFINEON
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