IRFM120AL99Z [FAIRCHILD]
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;型号: | IRFM120AL99Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:269K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFM120A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
W
RDS(on) = 0.2
ID = 2.3 A
Improved Gate Charge
Extended Safe Operating Area
SOT-223
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
2
W
Lower RDS(ON) : 0.155 (Typ.)
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
V
100
2.3
O
Continuous Drain Current (T =25
)
)
C
A
ID
A
O
Continuous Drain Current (T =70
1.84
18
C
A
IDM
VGS
EAS
IAR
Drain Current-Pulsed
1
A
V
O
+
_
20
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
2
mJ
A
123
2.3
O
1
O
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
1
0.24
6.5
O
3
O
O
*
Total Power Dissipation (T =25
)
2.4
C
A
PD
O
*
Linear Derating Factor
Operating Junction and
W/ C
0.019
TJ , TSTG
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
O
C
TL
Thermal Resistance
Symbol
Characteristic
Junction-to-Ambient
Typ.
--
Max.
Units
O
RqJA
*
52
/W
C
q
When mounted on the minimum pad size recommended (PCB Mount).
*
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFM120A
O
Electrical Characteristics (TA=25 Cunless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
m
VGS=0V,ID=250
A
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/
V
100 --
--
O
m
DBV/DTJ
VGS(th)
ID=250 A
See Fig 7
C
-- 0.12 --
m
V
DS=5V,ID=250 A
2.0
--
--
--
4.0
VGS=20V
GS=-20V
VDS=100V
DS=80V,TA=125
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
100
IGSS
nA
V
--
-- -100
--
--
--
10
IDSS
Drain-to-Source Leakage Current
m
A
O
C
V
--
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
RDS(on)
W
W
VGS=10V,ID=1.15A
VDS=40V,ID=1.15A
--
--
O
0.2
gfs
Ciss
Coss
Crss
td(on)
tr
4
--
--
--
--
--
--
--
--
--
--
--
3.12 --
370 480
O
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
110
45
40
40
90
70
22
--
95
38
14
14
36
28
16
2.7
7.8
pF
See Fig 5
VDD=50V,ID=9.2A,
W
RG=18
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
4
See Fig 13
5
O
O
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller” ) Charge
V
DS=80V,VGS=10V,
Qgs
Qgd
nC
ID=9.2A
4
5
O
O
--
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
IS
ISM
VSD
trr
--
--
--
--
--
--
2.3
18
1.5
--
Integral reverse pn-diode
A
1
in the MOSFET
O
O
4
O
V
C
--
TJ=25 ,IS=2.3A,VGS=0V
O
ns
C
TJ=25 ,IF=9.2A
98
m
4
Qrr
C
m
diF/dt=100A/ s
-- 0.34 --
O
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
L=35mH, IAS=2.3A, VDD=25V, RG=27W, Starting TJ =25oC
2
O
ISD _ 9.2A, di/dt 300A/ s, VDD _ BVDSS , Starting TJ =25 o
3
_
<
m
C
<
<
O
_
<
4
Pulse Test : Pulse Width = 250 ms, Duty Cycle 2%
O
Essentially Independent of Operating Temperature
5
O
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1
10
1
10
Bottom : 4.5 V
150 o
C
0
10
0
25 o
C
10
@ Notes :
1. V = 0 V
GS
@ Notes :
1. 250 s Pulse Test
2. V = 40 V
DS
3. 250 s Pulse Test
µ
- 55o
C
µ
2. TA = 25o
C
-1
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.4
1
10
V
= 10 V
0.3
0.2
0.1
0.0
GS
0
10
V
= 20 V
GS
@ Notes :
1. V = 0 V
o
150
C
GS
o
o
@ Note : T = 25
J
C
2. 250 s Pulse Test
µ
25
C
-1
10
0
10
20
30
40
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
600
400
200
0
C
iss= Cgs+ Cgd ( Cds= shorted )
V
DS = 20 V
DS = 50 V
DS = 80 V
Coss= Cds+ C
gd
C iss
10
Crss= C
gd
V
V
C oss
5
0
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
@ Notes : ID = 9.2 A
15 20
0
1
0
5
10
10
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
@ Notes :
1. VGS = 10 V
2. ID = 4.6 A
@ Notes :
1. VGS = 0 V
2. I = 250
A
µ
D
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
T , Junction Temperature [ oC]
T , Junction Temperature [ oC]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Ambient Temperature
2.5
2
10
Operation in This Area
is Limited by RDS(on)
2.0
1.5
1.0
0.5
0.0
10
s
µ
1
10
100
1 ms
s
µ
10 ms
100 ms
0
10
DC
@ Notes :
1. T = 25o
-1
10
C
A
2. T = 150o
C
J
3. Single Pulse
-2
10
-1
0
1
2
25
50
75
100
125
150
10
10
10
10
VDS , Drain-Source Voltage [V]
T , Ambient Temperature [ oC]
A
Fig 11. Thermal Response
102
D=0.5
0.2
101
@
Notes
:
0.1
1.
Z
θ JA(t)=52 oC/W Max.
0.05
2. Duty Factor, D=t/t2
1
3. TJM-TA=PDM*Zθ JA(t)
0.02
0.01
100
PDM
t1
t2
single pulse
10-4 10-3
10-1
10-5
10-2
10-1
100
101
102
103
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
W
50K
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRFM120A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
IS
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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