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IRFN214B [FAIRCHILD]

250V N-Channel MOSFET; 250V N沟道MOSFET

IRFN214B


元器件型号：	IRFN214B
生产厂家：	FAIRCHILD SEMICONDUCTOR
描述和应用：	250V N-Channel MOSFET 250V N沟道MOSFET 晶体小信号场效应晶体管开关
PDF文件：	总8页 (文件大小：608K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFN214B参数

IRFN214BTA_FP001

Small Signal Field-Effect Transistor, 0.6A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN

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0 FAIRCHILD

IRFN240

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)

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32 IRF

IRFN240SMD

N-CHANNEL POWER MOSFET

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8 SEME-LAB

IRFN250

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A)

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69 IRF

IRFN250

N–CHANNEL POWER MOSFET

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24 SEME-LAB

IRFN250PBF

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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1 IRF

IRFN250SMD

N-CHANNEL POWER MOSFET

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14 SEME-LAB

IRFN340

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A)

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25 IRF

IRFN340PBF

暂无描述

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0 IRF

IRFN340SMD

N-CHANNEL POWER MOSFET

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14 SEME-LAB

IRFN350

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)

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16 IRF

IRFN350PBF

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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1 IRF

IRFN3710

TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)

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14 IRF

IRFN3710

N–CHANNEL POWER MOSFET

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7 SEME-LAB

IRFN3710PBF

Power Field-Effect Transistor, 45A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

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0 IRF

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