IRFN250PBF [INFINEON]
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN;
| 型号： | IRFN250PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总6页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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