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元器件品牌
IRFS610B
[FAIRCHILD]
200V N-Channel MOSFET; 200V N沟道MOSFET
元器件型号：
IRFS610B
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
200V N-Channel MOSFET
200V N沟道MOSFET
PDF文件：
总10页 (文件大小：868K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS610B参数
查看货源
IRFS614A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.1A I(D) | TO-220AB
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18
ETC
IRFS614B
250V N-Channel MOSFET
Warning
: Undefined variable $rtag in
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156
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18
FAIRCHILD
IRFS614B_FP001
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN
Warning
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0
FAIRCHILD
IRFS614BYDTU-FP001
Transistor
Warning
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156
-
0
FAIRCHILD
IRFS620
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | SOT-186
Warning
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17
ETC
IRFS620
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
SAMSUNG
IRFS620A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.1A I(D) | TO-220AB
Warning
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12
ETC
IRFS620B
200V N-Channel MOSFET
Warning
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156
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16
FAIRCHILD
IRFS621
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | SOT-186
Warning
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17
ETC
IRFS621
Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
SAMSUNG
IRFS622
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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156
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0
SAMSUNG
IRFS624
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) | TO-220VAR
Warning
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14
ETC
IRFS624
Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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on line
156
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0
SAMSUNG
IRFS624A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.4A I(D) | TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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16
ETC
IRFS624B
250V N-Channel MOSFET
Warning
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on line
156
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13
FAIRCHILD
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