IRFS620 [SAMSUNG]
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 型号： | IRFS620 |
| 厂家： | 
SAMSUNG SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 晶体管 |
| 文件： | 总1页 (文件大小：42K) |
| 下载： | 下载PDF数据表文档文件 |
IRFS620A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.1A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ETC
IRFS620B
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
FAIRCHILD
IRFS621
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
17
ETC
IRFS621
Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRFS622
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRFS624
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
14
ETC
IRFS624
Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRFS624A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.4A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
ETC
IRFS624B
250V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
FAIRCHILD
IRFS625
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.9A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
ETC
IRFS625
Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRFS630
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5.9A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
764
ETC
IRFS630
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
IRFS630A
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
974
FAIRCHILD
IRFS630B
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
499
FAIRCHILD
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