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元器件品牌
IRFS640A
[FAIRCHILD]
Rugged Gate Oxide Technology; 坚固的门栅氧化层技术
元器件型号：
IRFS640A
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
Rugged Gate Oxide Technology
坚固的门栅氧化层技术
晶体 晶体管 开关 脉冲 栅 局域网
PDF文件：
总7页 (文件大小：321K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS640A参数
查看货源
IRFS640B
200V N-Channel MOSFET
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241
FAIRCHILD
IRFS640B
200V N-Channel MOSFET
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16
TGS
IRFS640B
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN
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0
ROCHESTER
IRFS640B_FP001
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN
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0
FAIRCHILD
IRFS640B_FP001
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN
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0
ROCHESTER
IRFS641
Improved inductive ruggedness
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21
SAMSUNG
IRFS641
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 9.8A I(D) | SOT-186
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27
ETC
IRFS641
Power Field-Effect Transistor, 9.8A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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0
SAMSUNG
IRFS642
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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0
SAMSUNG
IRFS644
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.5A I(D) | TO-220VAR
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34
ETC
IRFS644A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.9A I(D) | TO-220AB
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84
ETC
IRFS644A
Advanced Power MOSFET
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34
FAIRCHILD
IRFS644B
250V N-Channel MOSFET
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59
FAIRCHILD
IRFS645
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.4A I(D) | TO-220VAR
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49
ETC
IRFS645
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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0
SAMSUNG
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