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元器件品牌
IRFS820B
[FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET
元器件型号：
IRFS820B
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
500V N-Channel MOSFET
500V N沟道MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总10页 (文件大小：859K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS820B参数
查看货源
IRFS820B_NL
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
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0
FAIRCHILD
IRFS820BT
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Warning
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1
FAIRCHILD
IRFS821
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220VAR
Warning
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15
ETC
IRFS821
Power Field-Effect Transistor, 2.1A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
SAMSUNG
IRFS822
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | TO-220VAR
Warning
: Undefined variable $rtag in
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27
ETC
IRFS822
Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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0
SAMSUNG
IRFS823
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 1.5A I(D) | TO-220VAR
Warning
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10
ETC
IRFS830
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VAR
Warning
: Undefined variable $rtag in
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156
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84
ETC
IRFS830
Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
SAMSUNG
IRFS830A
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.1A I(D) | TO-220AB
Warning
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156
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115
ETC
IRFS830A
Advanced Power MOSFET
Warning
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156
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39
FAIRCHILD
IRFS830B
500V N-Channel MOSFET
Warning
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156
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70
FAIRCHILD
IRFS830BT
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
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0
FAIRCHILD
IRFS831
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-220VAR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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19
ETC
IRFS831
Power Field-Effect Transistor, 3.1A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
SAMSUNG
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