IRLM120AS62Z [FAIRCHILD]
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRLM120AS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLM120A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
RDS(on) = 0.22 Ω
ID = 2.3 A
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.176 Ω (Typ.)
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
100
2.3
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=70oC)
Drain Current-Pulsed
ID
A
1.85
18
IDM
VGS
EAS
IAR
(1)
A
V
Gate-to-Source Voltage
±20
105
2.3
Single Pulsed Avalanche Energy
Avalanche Current
(2)
(1)
(1)
(3)
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC) *
Linear Derating Factor *
0.27
6.5
mJ
V/ns
W
2.7
PD
TJ, TSTG
TL
0.022
W/oC
Operating Junction and
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
oC
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
--
Max.
Units
oC/W
RθJA
Junction-to-Ambient *
46.3
* When mounted on the minimum pad size recommended (PCB Mount).
1
N-CHANNEL
POWER MOSFET
IRLM120A
Electrical Characteristics (TC=25 oC unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
GS=0V,ID=250µA
ID=250µA See Fig 7
DS=5V,ID=250µA
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/ oC
V
100 --
--
∆BV/∆TJ
VGS(th)
-- 0.09 --
V
V
V
1.0
--
--
2.0
100
GS=20V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
GS=-20V
-- -100
VDS=100V
DS=80V,TC=125 oC
--
--
10
IDSS
Drain-to-Source Leakage Current
µA
V
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
RDS(on)
VGS=5V,ID=1.15A
VDS=40V,ID=1.15A
(4)
(4)
--
--
Ω
Ω
0.22
--
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
4.6
340 440
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
115
50
20
30
50
30
15
--
90
39
5
pF
ns
See Fig 5
VDD=50V,ID=9.2A,
10
19
9
RG=9 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
See Fig 13
(4)(5)
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
10.2
1.7
6.0
VDS=80V,VGS=5V,
ID=9.2A
Qgs
Qgd
nC
--
See Fig 6 & Fig 12 (4)(5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
TJ=25 oC,IS=2.3A,VGS=0V
TJ=25 oC,IF=9.2A
--
--
--
--
--
--
2.3
18
1.5
--
A
ISM
(1)
(4)
VSD
trr
V
--
ns
µC
98
Qrr
-- 0.34 --
diF/dt=100A/µs
(4)
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=30mH, IAS=2.3A, VDD=25V, RG=27Ω, Starting TJ =25 oC
③ ISD < 9.2A, di/dt < 300A/μs, VDD < BVDSS , Starting TJ =25 oC
④ Pulse Test : Pulse Width = 250µs, Duty Cycle < 2%
⑤ Essentially Independent of Operating Temperature
2
N-CHANNEL
POWER MOSFET
IRLM120A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top :
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
1
1
10
10
Bottom : 3.0V
150 oC
0
0
10
10
25 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
@ Notes :
1. 250 s Pulse Test
- 55 oC
4
µ
3. 250 s Pulse Test
µ
2. T = 25 oC
C
-1
-1
10
10
-1
0
1
0
2
6
8
10
10
10
10
V , Gate-Source Voltage [V]
V , Drain-Source Voltage [V]
GS
DS
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.4
0.3
0.2
0.1
0.0
1
10
V = 5 V
GS
0
10
V = 10 V
@Notes:
GS
150 oC
1. V =0 V
GS
@Note: T = 25 oC
2. 250 sPulseTest
µ
J
25 oC
-1
10
0
10
20
30
40
0.4
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I , Drain Current [A]
V , Source-Drain Voltage [V]
D
SD
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
600
480
360
240
120
C =C +C (C =shorted)
iss gs gd
ds
C =C +C
oss ds gd
6
C iss
V =20 V
C =C
rss gd
DS
V =50 V
DS
V =80 V
DS
Coss
4
2
0
@Notes:
1. V = 0 V
GS
Crss
2. f= 1MHz
@Notes:I =9.2A
D
00
10
1
0
2
4
6
8
10
12
10
Q , Total Gate Charge [nC]
V , Drain-Source Voltage [V]
G
DS
3
N-CHANNEL
POWER MOSFET
IRLM120A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = 5 V
@ Notes :
1. V = 0 V
GS
2. I = 4.6 A
2. I = 250
A
µ
D
D
-75 -50 -25
0
25
50
75
100 125 150 175
-75 -50 -25
0
25
50
75
100 125 150 175
o
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
2
10
10
OperationinThisArea
isLimitedby RDS(on)
8
6
4
2
0
100 s
µ
1
10
1ms
10ms
DC
@Notes:
1. T = 25 oC
0
10
C
2. T =150 oC
J
3. SinglePulse
-1
10
0
1
2
25
50
75
100
125
150
10
10
10
o
T , Case Temperature [C]
V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
101
D=0.5
100
0.2
@ Notes :
1. Z JC(t)=3.5 oC/W Max.
0.1
θ
0.05
2. Duty Factor, D=t1/t2
0.02
10-1
3. TJM-TC=PDM*Z JC(t)
PDM
θ
0.01
single pulse
t1
t2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
4
N-CHANNEL
POWER MOSFET
IRLM120A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator ”
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
1
2
2
LL
ID
----
EAS
=
LL IAS
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
C
VDD
DUT
VDD
VDS (t)
5V
t p
t p
Time
5
N-CHANNEL
POWER MOSFET
IRLM120A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by ＂RG＂
• IS controlled by Duty Factor ＂D＂
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
6
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failure to perform when properly used in accordance
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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