IRLM220ATF_技术文档

Is Now Part of

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November 2013

IRLM220A

N-Channel A-FET

200 V, 1.13 A, 800 mΩ

FEATURES

BV_DSS= 200 V

ν

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.8 Ω

I_D= 1.13 A

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 µA (Max.) @ V_DS= 200V

Lower R_DS(ON): 0.609 Ω (Typ.)

D

S

D

SOT-223

G

Absolute Maximum Ratings

Symbol

Characteristic

IRLM220ATF

Units

V_DSS

Drain-to-Source Voltage

V

200

1.13

0.9

9

Continuous Drain Current (T_A=25°C)

Continuous Drain Current (T_A=70°C)

Drain Current-Pulsed

I_D

A

I_DM

V_GS

E_AS

I_AR

(1)

A

V

Gate-to-Source Voltage

±20

29

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

mJ

A

1.13

0.2

5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

mJ

V/ns

W

*

Total Power Dissipation (T_A=25°C)

2

P_D

*

Linear Derating Factor

Operating Junction and

W/°C

0.016

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

°C

Maximum Lead Temp. for Soldering

T_L

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

--

Max.

Units

R_θJA

*

Junction-to-Ambient

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount).

www.fairchildsemi.com

IRLM220A Rev. C0

1

Package Marking and Ordering Information

Part Number

Top Mark

Package

Packing Method Reel Size

13 "

Tape Width

Quantity

IRLM220ATF

IRLM220A

SOT-223

12 mm

4000 units

Tape and Reel

Electrical Characteristics T_C= 25^oC unless otherwise noted.

--

Symbol

BV_DSS

Characteristic

Min. Typ. Max. Units

Test Condition

--

V

_GS=0V,I_D=250µA

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

V

V/°C

V

200 --

-- 0.18

2.0

100

-100

10

∆BV/∆T_J

V_GS(th)

I_D=250µA

See Fig 7

V

_DS=5V,I_D=250µA

1.0

--

_GS=20V

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

I_GSS

nA

_GS=--20V

--

100

_DS=200V

--

I_DSS

Drain-to-Source Leakage Current

µA

_DS=160V,T_C=125°C

--

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

R_DS(on)

V_GS=5V,I_D=0.57A

V_DS=40V,I_D=0.57A

--

0.8

--

Ω

g_fs

C_iss

C_oss

C_rss

t_d(on)

t_r

--

2.8

S

330 430

V

_GS=0V,V_DS=25V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

70

30

25

20

60

20

15

--

55

8

pF

See Fig 5

6

V_DD=100V,I_D=5A,

24

6

R_G=9Ω

See Fig 13

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

(4)

6

Q_g

V_DS=160V,V_GS=5V,

I_D=5A

Total Gate Charge

Gate-Source Charge

Gate-Drain (“Miller”) Charge

10.3

2.0

4.4

Q_gs

Q_gd

nC

--

See Fig 6 & Fig 12 (4)

Source-Drain Diode Ratings and Characteristics

Symbol

I_S

Characteristic

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

Test Condition

Integral reverse pn-diode

in the MOSFET

--

-- 1.13

A

V

I_SM

(1)

--

9

T_J=25°C,I_S=1.13A,V_GS=0V

V_SD

t_rr

1.5

ns T_J=25°C,I_F=5A

µC di_F/dt=100A/µs

140 --

Q_rr

-- 0.59 --

Notes ;

① Repetitive rating : pulse-width limited by maximum junction temperature.

②

③

④

L = 35 mH, I_AS= 1.13 A, V_DD= 50 V, R_G= 27 Ω, starting T_J= 25°C.

_SD≤ 5 A, di/dt ≤ 180 A/µs, V_DD≤ BV_DSS, starting T_J= 25°C.

Essentially independent of operating temperature.

I

www.fairchildsemi.com

IRLM220A Rev. C0

2

ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

V

GS

1

10 Top :

7.0V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

1

10

0

10

150 ^oC

Bottom : 3.0V

0

10

25 ^oC

@ Notes :

1. V_GS= 0 V

2. V_DS= 40 V

- 55 ^oC

@ Notes :

-1

10

1. 250 s Pulse Test

µ

3. 250 s Pulse Test

µ

2. T = 25 ^oC

C

-1

10

-1

0

1

0

2

4

6

8

10

V_DS, Drain-Source Voltage [V]

V_GS, Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

2.0

1.5

1.0

0.5

0.0

1

10

V = 5 V

GS

0

10

@Notes:

V = 10 V

150^oC

GS

1. V =0 V

GS

25^oC

@Note: T = 25 ^oC

2. 250 sPulseTest

µ

J

-1

10

0

3

6

9

12

15

18

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I , Drain Current [A]

V_SD, Source-Drain Voltage [V]

D

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

500

400

300

200

100

C =C +C (C =shorted)

iss gs gd

ds

C = _ds+C

oss

gd

6

C_iss

C =

V =40 V

rss gd

DS

V =100V

DS

V =160V

DS

4

2

0

C _oss

@Notes:

1. V = 0 V

GS

2. f= 1MHz

C _rss

@Notes:I =5 A

D

0₀

10

1

0

2

6

8

10

12

10

Q , Total Gate Charge [nC]

V

_DS, Drain-Source Voltage [V]

G

www.fairchildsemi.com

IRLM220A Rev. C0

3

ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅꢀꢀꢀꢀꢁꢂꢃꢄꢅꢆꢄꢇꢈꢉꢊ

Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

1.2

2.5

2.0

1.5

1.0

0.5

0.0

1.1

1.0

@ Notes :

1. V_GS= 5 V

0.9

@ Notes :

1. V_GS= 0 V

2. I = 2.5 A

D

2. I = 250

A

µ

D

0.8

-75 -50 -25

0

25

50

75

100 125 150 175

-75 -50 -25

0

25

50

75

100 125 150 175

o

T , Junction Temperature [C]

J

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Ambient Temperature

2

1.5

10

OperationinThisArea

isLimitedby R_DS(on)

1

10

100 s

1ms

10ms

µ

1.0

0.5

0.0

0

10

DC

-1

10

@Notes:

1. T = 25 ^oC

C

2. T =150^oC

3. SinglePulse

-2

J

10

-3

10

-1

0

1

2

25

50

75

100

125

150

10

o

T , Ambient Temperature [C]

V_DS, Drain-Source Voltage [V]

A

Fig 11. Thermal Response

10²

10¹

D=0.5

0.2

0.1

@ Notes :

1. _JA(t)=62.5 ^oC/W Max.

0.05

θ

2.

ty Factor, D=t₁/t₂

0.02

0.01

3. _JM-T_A=P_DM*Z _JA(t)

P_DM

10⁰

θ

t₁

t₂

single pulse

10^-3

10^-1

10^-5

10^-4

10^-2

10^-1

10⁰

10¹

10²

10³

t₁, Square Wave Pulse Duration [sec]

www.fairchildsemi.com

IRLM220A Rev. C0

4

V_GS

Same Type

as DUT

50KΩ

Q_g

12V

200nF

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

I_G= const.

Charge

Figure 12. Gate Charge Test Circuit & Waveform

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

V_GS

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Figure 13. Resistive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

L

1

2

----

E_AS

=

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_GS

V_DD

V_DS(t)

DUT

t _p

Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

IRLM220A Rev. C0

5

+

DUT

V_DS

_

I _SD

L

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.fairchildsemi.com

IRLM220A Rev. C0

6

Mechanical Dimensions

Figure 16. SOT-223, Molded, 4-Lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TTE23-004

7

www.fairchildsemi.com

IRLM220A Rev. C0

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

AX-CAP *

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

Sync-Lock™

®*

®

tm

®

Global Power Resource^SM

GreenBridge™

Green FPS™

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

®

TinyBoost

TinyBuck

®

Green FPS™ e-Series™

Gmax™

GTO™

TinyCalc™

®

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TranSiC™

TriFault Detect™

Current Transfer Logic™

IntelliMAX™

®

DEUXPEED

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Dual Cool™

®

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

EfficentMax™

ESBC™

®

TRUECURRENT *

SerDes™

SMART START™

®

Solutions for Your Success™

®

SPM

Fairchild

®

STEALTH™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild Semiconductor

FACT Quiet Series™

®

UHC

®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

®

mWSaver

OptoHiT™

OPTOLOGIC

OPTOPLANAR

FACT

FAST

®

FastvCore™

FETBench™

FPS™

®

SupreMOS

SyncFET™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

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THEREIN, WHICH COVERS THESE PRODUCTS.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I66

IRLM220A Rev. C0

8

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	IRLM220ATF
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，A-FET，200 V，1.13 A，800 mΩ，SOT-223 开关脉冲光电二极管晶体管
文件：	总10页 (文件大小：845K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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