ISL9R30120G2_NL [FAIRCHILD]
Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN;
| 型号： | ISL9R30120G2_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2002
ISL9R30120G2
30A, 1200V Stealth™ Diode
General Description
Features
•
•
•
•
•
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 4.5
b a
The ISL9R30120G2 is a Stealth™ diode optimized for low loss
performance in high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 56ns
rr
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C
(I
) and exceptionally soft recovery under typical
RM(REC)
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Avalanche Energy Rated
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
Applications
applications. The low I
and short t phase reduce loss
RM(REC)
a
•
•
•
•
•
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
SMPS FWD
Formerly developmental type TA49415.
• Snubber Diode
Package
Symbol
JEDEC STYLE 2 LEAD TO-247
ANODE
CATHODE
K
CATHODE
(BOTTOM SIDE
METAL)
A
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
Units
V
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
1200
1200
1200
30
RRM
RWM
V
V
V
V
R
o
I
Average Rectified Forward Current (T = 80 C)
A
F(AV)
C
I
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
70
A
FRM
I
325
A
FSM
P
166
W
mJ
°C
D
E
Avalanche Energy (1A, 40mH)
20
AVL
T , T
Operating and Storage Temperature Range
-55 to 150
J
STG
T
Maximum Temperature for Soldering
L
T
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
300
260
°C
°C
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
Package Marking and Ordering Information
Device Marking
R30120G2
Device
Package
TO-247
Tape Width
N/A
Quantity
30
ISL9R30120G2
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
I
Instantaneous Reverse Current
V
= 1200V
T
T
= 25°C
-
-
-
-
100
1.0
µA
R
R
C
C
= 125°C
mA
On State Characteristics
V
Instantaneous Forward Voltage
I = 30A
T
T
= 25°C
-
-
2.8
2.6
3.3
3.1
V
V
F
F
C
C
= 125°C
Dynamic Characteristics
C
Junction Capacitance
V
= 10V, I = 0A
-
115
-
pF
J
R
F
Switching Characteristics
t
Reverse Recovery Time
I
I
I
= 1A, dI /dt = 100A/µs, V = 15V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
80
56
ns
ns
ns
A
rr
F
F
F
F
R
= 30A, dI /dt = 100A/µs, V = 15V
100
F
R
t
Reverse Recovery Time
= 30A,
269
7.5
930
529
6.2
11
-
-
-
-
-
-
-
-
-
-
-
-
rr
dI /dt = 200A/µs,
V
I
I
I
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
F
RM(REC)
= 780V, T = 25°C
C
R
Q
nC
ns
-
RR
t
I = 30A,
F
dI /dt = 200A/µs,
V
T
rr
S
Softness Factor (t /t )
F
b
a
= 780V,
= 125°C
R
C
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
A
RM(REC)
Q
3.0
260
4.8
30
µC
ns
-
RR
t
I = 30A,
F
dI /dt = 1000A/µs,
V
T
rr
S
Softness Factor (t /t )
F
b
a
= 780V,
= 125°C
R
C
Maximum Reverse Recovery Current
Reverse Recovered Charge
A
RM(REC)
Q
3.4
520
µC
A/µs
RR
dI /dt
Maximum di/dt during t
b
M
Thermal Characteristics
R
R
Thermal Resistance Junction to Case
TO-247
-
-
-
-
0.75 °C/W
30 °C/W
θJC
θJA
Thermal Resistance Junction to Ambient TO-247
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
Typical Performance Curves
60
1000
100
10
o
150 C
o
50
125 C
o
150 C
o
100 C
40
o
125 C
o
75 C
30
1
o
100 C
20
10
0
o
o
25 C
0.1
25 C
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.5
1
1.5
2
2.5
3
3.5
4
V , FORWARD VOLTAGE (V)
V
, REVERSE VOLTAGE (KV)
F
R
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
750
750
o
o
V
= 780V, T = 125 C
C
V
= 780V, T = 125 C
C
R
R
625
500
375
250
125
0
625
500
375
250
125
0
t
at dI /dt = 200A/µs, 500A/µs, 800A/µs
F
b
t
at I = 60A, 30A, 15A
F
b
t
at dI /dt = 200A/µs, 500A/µs, 800A/µs
F
a
t
at I = 60A, 30A, 15A
F
a
0
10
20
30
40
50
60
200
400
600
800
1000
1200
I
, FORWARD CURRENT (A)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 3. t and t Curves vs Forward Current
Figure 4. t and t Curves vs dI /dt
a
b
a
b
F
40
30
20
10
0
40
35
30
25
20
15
10
o
o
V
= 780V, T = 125 C
V = 780V, T = 125 C
R C
R
C
dI /dt = 800A/µs
F
dI /dt = 500A/µs
F
I
= 60A
F
dI /dt = 200A/µs
F
I
= 30A
F
I
= 15A
F
0
10
20
30
40
50
60
200
400
600
800
1000
1200
I
, FORWARD CURRENT (A)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI /dt
F
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
Typical Performance Curves (Continued)
6.0
5.6
5.0
4.5
4.0
3.5
3.0
2.5
2.0
9
o
o
V
= 780V, T = 125 C
C
V
= 780V, T = 125 C
R
R
C
I
= 60A
8
7
6
5
4
3
F
I
= 60A
F
I
= 30A
= 15A
F
I
I
= 30A
= 15A
F
F
I
F
200
400
600
800
1000
1200
200
400
600
800
1000
1200
dI /dt, CURRENT RATE OF CHANGE (A/µs)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 7. Reverse Recovery Softness Factor vs
Figure 8. Reverse Recovery Charge vs dI /dt
F
dI /dt
F
1600
1400
1200
1000
800
600
400
200
0
-14
-16
-18
-20
-22
400
350
300
250
200
f = 1MHZ
I
= 30A, V = 780V, dI /dt = 500A/µs
F
R
F
I
RM(REC)
t
RR
0.03
0.1
1
10
100
25
50
75
100
125
150
V
, REVERSE VOLTAGE (V)
o
R
T
, CASE TEMPERATURE ( C)
C
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. Maximum Reverse Recovery Current
and t vs Case Temperature
rr
35
30
25
20
15
10
5
0
60
70
80
90
100
110
120
130
140
150
TC, CASE TEMPERATURE (oC)
Figure 11. DC CURRENT DERATING CURVE
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
Typical Performance Curves (Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1.0
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
10-4
PEAK TJ = PDM x Z JA x R JA + TA
θ
θ
0.01
10-5
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF
dIF
dt
t
rr
IF
t
t
b
a
DUT
CURRENT
SENSE
0
RG
+
0.25 IRM
IRM
VDD
VGE
-
MOSFET
t1
t2
Figure 13. t Test Circuit
Figure 14. t Waveforms and Definitions
rr
rr
I = 1A
L = 40mH
R < 0.1Ω
V
DD = 50V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
1 = IGBT (BVCES > DUT VR(AVL)
VAVL
Q
)
L
R
+
VDD
CURRENT
SENSE
IL
IL
Q1
I
V
VDD
DUT
-
t0
t1
t2
t
Figure 15. Avalanche Energy Test Circuit
Figure 16. Avalanche Current and Voltage
Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
â
â
SILENT SWITCHER
SMARTSTART
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
UHC
UltraFET
VCX
FAST
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
â
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
Power247
I2C
â
EcoSPARK
PowerTrench
E2CMOSTM
ISOPLANAR
LittleFET
MicroFET
MicroPak
QFET
QS
QT Optoelectronics
Quiet Series
EnSignaTM
TinyLogic
TruTranslation
FACT
FACT Quiet Series
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ H5
相关型号：
ISL9R3060G2_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN
FAIRCHILD
ISL9R460P2_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
FAIRCHILD
ISL9R460PF2_NL
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, TO-220F, 2 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明