ISL9R860S3SL86Z [FAIRCHILD]
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB,;
| 型号： | ISL9R860S3SL86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2002
ISL9R860P2, ISL9R860S2, ISL9R860S3S
8A, 600V Stealth™ Diode
General Description
Features
• Soft Recovery. . . . . . . . . . . . . . . . . . . .t / t > 2.5
b
a
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 25ns
rr
o
• Operating Temperature . . . . . . . . . . . . . . . 175 C
Stealth™ family exhibits low reverse recovery current
(I
) and exceptionally soft recovery under typical
RRM
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Applications
• Switch Mode Power Supplies
and short t phase
RRM
a
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
Formerly developmental type TA49409.
• Snubber Diode
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AC
JEDEC STYLE TO-262
K
ANODE
CATHODE
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
A
CATHODE
(FLANGE)
N/C
ANODE
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
600
Units
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
V
600
V
RWM
V
600
V
R
I
Average Rectified Forward Current
8
A
F(AV)
I
Repetitive Peak Surge Current (20kHz Square Wave)
16
A
FRM
I
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
100
A
FSM
P
85
W
mJ
˚C
D
E
Avalanche Energy (1A, 40mH)
20
AVL
T , T
Operating and Storage Temperature Range
-55 to 175
J
STG
T
Maximum Temperature for Soldering
L
T
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
˚C
˚C
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. B
Package Marking and Ordering Information
Device Marking
R860P2
Device
Package
TO-220AC
TO-262
Tape Width
Quantity
ISL9R860P2
ISL9R860S2
ISL9R860S3S
ISL9R860S3ST
-
-
R860S2
-
-
-
-
R860S3S
R860S3S
TO-263AB
TO-263AB
24mm
800
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
I
Instantaneous Reverse Current
V
= 600V
T
T
= 25˚C
-
-
-
-
100
1.0
µA
mA
R
R
C
= 125˚C
C
On State Characteristics
V
Instantaneous Forward Voltage
I = 8A
T
T
= 25˚C
-
-
2.0
1.6
2.4
2.0
V
V
F
F
C
= 125˚C
C
Dynamic Characteristics
C
Junction Capacitance
V
= 10V, I = 0A
-
30
-
pF
J
R
F
Switching Characteristics
t
Reverse Recovery Time
I = 1A, dI /dt = 100A/µs, V = 30V
-
-
-
-
-
-
-
-
-
-
-
-
18
21
25
30
-
ns
ns
ns
A
rr
F
F
R
I = 8A, dI /dt = 100A/µs, V = 30V
F
F
R
t
Reverse Recovery Time
I = 8A,
28
rr
F
dI /dt = 200A/µs,
I
I
I
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
F
3.2
50
-
RRM
V
= 390V, T = 25˚C
R
C
Q
-
nC
ns
RR
t
I = 8A,
77
-
rr
F
dI /dt = 200A/µs,
S
Softness Factor (t /t )
F
3.
b
a
V
T
= 390V,
= 125˚C
R
C
Maximum Reverse Recovery Current
Reverse Recovery Charge
3.4
150
53
-
-
-
A
RRM
Q
nC
ns
RR
t
Reverse Recovery Time
I = 8A,
F
rr
dI /dt = 600A/µs,
S
Softness Factor (t /t )
F
2.
b
a
V
T
= 390V,
= 125˚C
R
C
Maximum Reverse Recovery Current
Reverse Recovery Charge
6.5
195
500
-
-
-
A
RRM
Q
nC
RR
dI /dt
Maximum di/dt during t
-
A/µs
M
b
Thermal Characteristics
R
R
R
R
Thermal Resistance Junction to Case
-
-
-
-
-
-
1.75 ˚C/W
θJC
θJA
θJA
θJA
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
62
62
62
˚C/W
˚C/W
˚C/W
©2002 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. B
Typical Performance Curves
16
100
10
o
175 C
o
175 C
14
12
10
8
o
o
150 C
150 C
o
25 C
o
125 C
o
125 C
o
100 C
o
100 C
6
1
4
o
25 C
2
0.1
0
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5 2.75
100
200
300
400
500
600
V , FORWARD VOLTAGE (V)
V
, REVERSE VOLTAGE (V)
F
R
Figure 1.Forward Current vs Forward Voltage
Figure 2.Reverse Current vs Reverse Voltage
80
90
80
70
60
50
40
30
20
10
0
VR = 390V, TJ = 125˚C
tb AT IF = 16A, 8A, 4A
VR = 390V, TJ = 125˚C
70
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
60
50
40
30
20
10
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
ta AT IF = 16A, 8A, 4A
0
0
2
4
6
8
10
12
14
16
100
200
300 400
500 600
700 800 900 1000
IF, FORWARD CURRENT (A)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3.t and t Curves vs Forward Current
Figure a4n.td t Curves vs dI /dt
a
b
a
b
F
14
12
10
8
11
10
9
V
= 390V, T = 125˚C
J
R
dI /dt = 800A/µs
F
V
= 390V, T = 125˚C
J
R
I
= 16A
F
8
dI /dt = 500A/µs
F
I
= 8A
F
7
6
I
= 4A
6
F
5
dI /dt = 200A/µs
F
4
4
2
3
2
0
0
2
4
6
8
10
12
14
16
100
200
300
400
500
600
700
800
900 1000
I , FORWARD CURRENT (A)
F
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
Figure 5.Maximum Reverse Recovery Current vs Figure 6.Maximum Reverse Recovery Current vs
Forward Current dI /dt
F
©2002 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. B
Typical Performance Curves (Continued)
350
300
250
200
150
100
50
6
V
= 390V, T = 125˚C
J
V
= 390V, T = 125˚C
J
R
R
5
4
3
2
1
I
I
I
= 16A
= 8A
= 4A
F
I
I
= 16A
F
F
I
= 8A
F
F
F
= 4A
400
100
200
300
500
600
700
800
900 1000
100
200
300
400
500
600
700
800
900 1000
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
Figure 7.Reverse Recovery Softness Factor vs
dI /dt
Figure 8.Reverse Recovery Charge vs/ddtI
F
F
1200
1000
800
600
400
200
0
0.1
1
10
100
V
, REVERSE VOLTAGE (V)
R
Figure 9. Junction Capacitance vs Reverse Voltage
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1.0
0.1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
10-4
PEAK T = P x Z
x R
+ T
JA A
J
DM
JA
θ
θ
0.01
10-5
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 10. Normalized Maximum Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. B
Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF
dIF
dt
t
rr
IF
t
t
b
a
DUT
CURRENT
SENSE
0
RG
+
0.25 IRM
IRM
VDD
VGE
-
MOSFET
t1
t2
Figure 11. It Test Circuit
Figure 12.t Waveforms and Definitions
rr
rr
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
E
AVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
VAVL
Q
1 = IGBT (BVCES > DUT VR(AVL))
L
R
+
VDD
CURRENT
SENSE
IL
IL
Q1
I
V
VDD
DUT
-
t0
t1
t2
t
Figure 13. Avalanche Energy Test Circuit
Figure 14.Avalanche Current and Voltage
Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号：
ISL9R860S3ST_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, TO-263AB, 3 PIN
FAIRCHILD
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